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    Acoustic wave device
    1.
    发明授权
    Acoustic wave device 有权

    公开(公告)号：US11811388B2

    公开(公告)日：2023-11-07

    申请号：US17326385

    申请日：2021-05-21

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： Hidetaro Nakazawa

    IPC: H03H9/02 ,  H03H9/145 ,  H03H9/54 ,  H03H9/64

    CPC classification number: H03H9/02992 ,  H03H9/14552 ,  H03H9/54 ,  H03H9/64

    Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a first comb-shaped electrode including first electrode fingers and a second comb-shaped electrode including second electrode fingers. The IDT electrode includes a first portion in which a main electrode layer includes a first metal and a second portion in which a main electrode layer includes a second metal. The first electrode fingers and the second comb-shaped electrode include first facing portions facing each other with a gap in between, and the second electrode fingers and the first comb-shaped electrode include second facing portions facing each other with a gap in between. At least one of the first facing portions and second facing portions is the second portion, and a portion of the IDT electrode other than the second portion is the first portion.

    ELASTIC WAVE FILTER
    6.
    发明申请
    ELASTIC WAVE FILTER 有权
    弹性波过滤器

    公开(公告)号：US20120235769A1

    公开(公告)日：2012-09-20

    申请号：US13415131

    申请日：2012-03-08

    Applicant: Tadaaki TSUDA

    Inventor： Tadaaki TSUDA

    IPC: H03H9/64

    CPC classification number: H03H9/14558 ,  H03H9/14505 ,  H03H9/1455 ,  H03H9/14552 ,  H03H9/14591 ,  H03H9/644 ,  H03H9/6459

    Abstract: There is provided a tapered elastic wave filter higher in impedance than a conventional filter where one input-side IDT electrode and one output-side IDT electrode are disposed. Filter parts which are the same in the structure of an input-side IDT electrode and in the structure of an output-side IDT electrode are disposed, and when the first filter part is disposed on a lower side and the second filter part is disposed on an upper side of the first filter part so that the input-side IDT electrodes are connected and the output-side IDT electrodes are connected, in cascade (in series) between a signal port and a ground port, an upper busbar in each of the IDT electrodes of the first filter part and a lower busbar in each of the IDT electrodes of the second filter part are electrically connected to each other.

    Abstract translation: 提供了比设置有一个输入侧IDT电极和一个输出侧IDT电极的常规滤波器更高阻抗的锥形弹性波滤波器。 配置在输入侧IDT电极的结构和输出侧IDT电极的结构中相同的滤波器部件，并且当第一过滤器部件配置在下侧并且第二过滤器部件配置在 第一滤波器部分的上侧，使得输入侧IDT电极连接，并且输出侧IDT电极在信号端口和接地端口之间级联（串联）连接，每个的上母线 第一过滤器部分的IDT电极和第二过滤器部分的每个IDT电极中的下母线彼此电连接。

    Surface Acoustic Wave Device and Communication Device
    7.
    发明申请
    Surface Acoustic Wave Device and Communication Device 有权
    表面声波装置及通讯装置

    公开(公告)号：US20100219912A1

    公开(公告)日：2010-09-02

    申请号：US12670103

    申请日：2008-06-30

    Applicant: Hiroyuki Tanaka ,  Takehiro Okumichi

    Inventor： Hiroyuki Tanaka ,  Takehiro Okumichi

    IPC: H03H9/15 ,  H03H9/00

    CPC classification number: H03H9/14552 ,  H03H9/0038 ,  H03H9/02763 ,  H03H9/02952 ,  H03H9/14582 ,  H03H9/14585 ,  H03H9/14588 ,  H03H9/6469

    Abstract: An SAW device includes: a piezoelectric substrate 1; a first and a second SAW elements 2, 3 having three or more odd-number IDT electrodes 4-9 and reflector electrodes 10-13 arranged on the piezoelectric substrate 1; lines 16 which cascade-connect the first and the second SAW elements 2, 3; a first unbalanced signal terminal 14 connected to the IDT electrodes 4, 6 arranged at the both ends of the first SAW elements 2; and a second unbalanced signal terminal 15 connected to the IDT electrodes 7, 9 arranged at the both ends of the second SAW element 3. In each of the first and the second SAW elements 2, 3, one bus bar electrode 17 of each of center IDT electrodes 5, 8 is split into two, and non-split bus bar electrodes 18, 19 of at least one center IDT electrode of the first and the second SAW elements 2, 3 are connected to a reference potential electrode and the lines 16 are made to be balanced signal lines.

    Abstract translation: SAW器件包括：压电基片1; 具有布置在压电基板1上的三个或更多个奇数IDT电极4-9和反射器电极10-13的第一和第二SAW元件2,3; 将第一和第二SAW元件2,3级联的线路16; 连接到布置在第一SAW元件2的两端的IDT电极4,6的第一不平衡信号端子14; 以及与设置在第二SAW元件3的两端的IDT电极7,9连接的第二不平衡信号端子15.在第一和第二SAW元件2,3中的每一个中，每个中心的一个母线电极17 IDT电极5,8分成两个，第一和第二SAW元件2,3的至少一个中心IDT电极的非分裂母线电极18,19连接到参考电位电极，线16是 成为平衡信号线。

    SURFACE ACOUSTIC WAVE FILTER
    9.
    发明申请
    SURFACE ACOUSTIC WAVE FILTER 有权
    表面声波滤波器

    公开(公告)号：US20070103259A1

    公开(公告)日：2007-05-10

    申请号：US11619243

    申请日：2007-01-03

    Applicant: Nobunari TANAKA

    Inventor： Nobunari TANAKA

    IPC: H03H9/64

    CPC classification number: H03H9/14552 ,  H03H9/02842 ,  H03H9/64

    Abstract: A transversal surface acoustic wave filter includes an input-side interdigital electrode, an output-side interdigital electrode, and a shield electrode, which are provided on a surface wave substrate. The distance between an excitation point of the input-side interdigital electrode, which is closest to the shield electrode, and an intermediate point between the shield electrode-side end of the input-side interdigital electrode and the input-side interdigital electrode-side end of the shield electrode is in the range of about 0.8λ to about 0.975λ, wherein λ is the wavelength of a surface wave.

    Abstract translation: 横向声表面波滤波器包括设置在表面波基板上的输入侧交叉指状电极，输出侧交叉指状电极和屏蔽电极。 最靠近屏蔽电极的输入侧交叉指状电极的激励点与输入侧叉指电极的屏蔽电极侧端部和输入侧叉指电极侧端部之间的中间点 的屏蔽电极在约0.8λ至约0.975λ的范围内，其中λ是表面波的波长。

    Selectable reflector arrays for SAW sensors and identification devices
    10.
    发明授权
    Selectable reflector arrays for SAW sensors and identification devices 有权
    用于SAW传感器和识别装置的可选择的反射器阵列

    公开(公告)号：US06967428B2

    公开(公告)日：2005-11-22

    申请号：US10729920

    申请日：2003-12-09

    Applicant: Peter J. Edmonson ,  Colin K. Campbell

    Inventor： Peter J. Edmonson ,  Colin K. Campbell

    IPC: G01N29/02 ,  H01L41/08 ,  H03H9/02 ,  H03H9/145 ,  H04Q5/22 ,  G01S13/80

    CPC classification number: H03H9/6406 ,  G01N29/022 ,  G01N2291/0256 ,  G01N2291/0422 ,  G01N2291/0423 ,  H03H9/14552

    Abstract: A surface acoustic wave sensor or identification device has a piezoelectric substrate, an interdigitated transducer (IDT) input/output mounted on a substrate for receiving a radio frequency (RF) signal and propagating a corresponding surface acoustic wave along a surface of the substrate. An IDT reflector array is mounted on the substrate and operable to receive a surface acoustic wave and reflect the surface acoustic wave in modified form back to the IDT input/output for transmission of a corresponding modified RF signal from the device. The IDT reflector array has at least one reflector segment whose reflectivity characteristics are controlled to control the nature of the modified RF signal.

    Abstract translation: 表面声波传感器或识别装置具有压电基板，安装在基板上的叉指式换能器（IDT）输入/输出，用于接收射频（RF）信号并沿基板的表面传播对应的声表面波。 IDT反射器阵列安装在基板上并且可操作以接收表面声波并将修改后的表面声波反射回IDT输入/输出，以从设备传输相应的修改的RF信号。 IDT反射器阵列具有至少一个反射器段，其反射特性被控制以控制经修改的RF信号的性质。

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