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公开(公告)号：US20240305271A1
公开(公告)日：2024-09-12
申请号：US18667254
申请日：2024-05-17
发明人： Sunao YAMAZAKI
CPC分类号： H03H9/25 , H03H9/14541 , H03H9/02952
摘要： An acoustic wave device according to the present invention includes a piezoelectric substrate including a piezoelectric layer, a functional electrode provided on the piezoelectric layer, a first support layer provided on the piezoelectric substrate so as to surround the functional electrode, a covering portion provided on or above the first support layer and including a first main surface positioned on the functional electrode side and a second main surface opposite to the first main surface, a silicon oxide layer provided on the first main surface side of the covering portion, and an inductor provided on the silicon oxide layer and made of a wire. The covering portion is made of silicon. The acoustic wave device further includes one of an amorphous silicon layer and a polysilicon layer provided between the covering portion and the silicon oxide layer.
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公开(公告)号：US12009805B2
公开(公告)日：2024-06-11
申请号：US17434362
申请日：2020-03-16
发明人： Thomas Bauer , Ansgar Schäufele , Thomas Dengler
CPC分类号： H03H9/6453 , H03H9/02637 , H03H9/02834 , H03H9/14541
摘要： An improved DMS filter with electrode structures between a first port and a second port is provided. Wiring junctions are realized in multilayer crossing with dielectric material in between. There are insulating patches (L2) between crossing conductor layers (L1,L3). Signal wirings may be realized with multiple conductor layers (L1, L3) to reduce wiring resistance and the upper conductor layer (L3) of the signal wiring may partly overlap the insulating patches (L2). The insulating patches (L2) may extend over the acoustic path to achieve temperature compensation.
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公开(公告)号：US20240088865A1
公开(公告)日：2024-03-14
申请号：US18511405
申请日：2023-11-16
发明人： Satoru Matsuda , Tatsuya Fujii , Yoshiro Kabe , Kenji Nagano
CPC分类号： H03H9/02574 , H03H9/02559 , H03H9/02834 , H03H9/02842 , H03H9/14502 , H03H9/14541 , H03H9/25 , H03H9/6406 , H03H9/725
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.
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公开(公告)号：US11855609B2
公开(公告)日：2023-12-26
申请号：US17183429
申请日：2021-02-24
发明人： Ryo Nakagawa , Hideki Iwamoto
CPC分类号： H03H9/6406 , H03H9/02543 , H03H9/14541 , H03H9/25 , H03H9/6483 , H03H9/725
摘要： An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (φLT=0°±5°, θLT, ψLT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fh1_t(n) satisfies Formula (3) or Formula (4) for all m where m>n:
fh1_t(n)>fu(m) Formula (3); and
fh1_t(n)-
公开(公告)号：US11848658B2
公开(公告)日：2023-12-19
申请号：US17075039
申请日：2020-10-20
发明人： Yuya Hiramatsu , Rei Goto , Yumi Torazawa
CPC分类号： H03H9/02889 , H03F3/245 , H03H9/02559 , H03H9/02834 , H03H9/02992 , H03H9/145 , H03H9/1457 , H03H9/14541 , H03H9/25 , H03H9/6406 , H03H9/6489 , H03H9/725 , H03F2200/451
摘要： Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.
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公开(公告)号：US20230361755A1
公开(公告)日：2023-11-09
申请号：US18128565
申请日：2023-03-30
发明人： Rei Goto
CPC分类号： H03H9/205 , H03H9/14541 , H03H9/25 , H03H9/02574
摘要： An acoustic wave device comprising a transmit filter including a plurality of surface acoustic wave resonators. Each surface acoustic wave resonator of the transmit filter including an interdigital transducer electrode comprising a first material. The acoustic wave device further comprising a receive filter including a plurality of surface acoustic wave resonators. At least a proportion of the plurality of surface acoustic wave resonators of the receive filter each including an interdigital transducer electrode comprising a second material. The density of the first material is greater than the density of the second material.
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公开(公告)号：US20230353124A1
公开(公告)日：2023-11-02
申请号：US18220307
申请日：2023-07-11
发明人： Kentaro NAKAMURA , Katsuya DAIMON
CPC分类号： H03H9/25 , H03H9/02574 , H03H9/14541 , H03H9/02559 , H03H9/171 , H03H9/64
摘要： An acoustic wave device includes a crystal substrate, a silicon nitride film on the crystal substrate, a lithium tantalate layer on the silicon nitride film, and an interdigital transducer electrode on the lithium tantalate layer and including multiple first and second electrode fingers.
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8.发明公开公开(公告)号：US20230344416A1
公开(公告)日：2023-10-26
申请号：US18190459
申请日：2023-03-27
CPC分类号： H03H9/725 , H03H9/02834 , H03H9/14541 , H03H9/6483
摘要： A multiplexer is disclosed. The multiplexer can include a multilayer piezoelectric substrate surface acoustic wave device that includes at least a portion of a transmission filter. The multiplexer can include a temperature compensated surface acoustic wave device that includes at least a portion of a reception filter. The reception filter is electrically connected to the transmission filter.
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公开(公告)号：US20230336160A1
公开(公告)日：2023-10-19
申请号：US18212807
申请日：2023-06-22
发明人： Masakazu MIMURA
CPC分类号： H03H9/6489 , H03H9/6436 , H03H9/6483 , H03H9/14541 , H03H9/145 , H03H9/25 , H03H9/02559 , H03H9/02637
摘要： A bandpass acoustic wave filter device includes an IDT electrode and a dielectric film disposed on a piezoelectric substrate including a LiNbO3 layer, and an acoustic wave resonator is defined by the IDT electrode. The acoustic wave resonator utilizes the Rayleigh wave, and a response of an SH wave excited by the acoustic wave resonator is outside a pass band of the acoustic wave filter device.
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公开(公告)号：US11742827B2
公开(公告)日：2023-08-29
申请号：US17964370
申请日：2022-10-12
发明人： Kazunori Inoue
CPC分类号： H03H9/02559 , H03H9/02228 , H03H9/02992 , H03H9/14541
摘要： An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.
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