MULTILAYER PIEZOELECTRIC SUBSTRATE ACOUSTIC WAVE DEVICE WITH TRANSVERSE MODE SUPPRESSION

    公开(公告)号:US20240223152A1

    公开(公告)日:2024-07-04

    申请号:US18530700

    申请日:2023-12-06

    IPC分类号: H03H9/02 H03H9/145

    摘要: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side and an upper side opposite the lower side. The lower side is closer to the piezoelectric layer than the upper side. Widths of the lower side in the first and second regions are generally the same, and a width of the upper side in the first region is greater than a width of the upper side in the second region.

    ACOUSTIC WAVE DEVICE WITH ANTI-REFLECTION LAYER

    公开(公告)号:US20200266796A1

    公开(公告)日:2020-08-20

    申请号:US16790408

    申请日:2020-02-13

    摘要: An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.

    ACOUSTIC WAVE DEVICE WITH PARTIALLY ROUNDED INTERDIGITAL TRANSDUCER ELECTRODE

    公开(公告)号:US20240223156A1

    公开(公告)日:2024-07-04

    申请号:US18530655

    申请日:2023-12-06

    IPC分类号: H03H9/145 H03H3/08 H03H9/25

    CPC分类号: H03H9/14538 H03H3/08 H03H9/25

    摘要: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side, an upper side opposite the lower side, and a sidewall between the lower side and the upper side. A corner between the upper side and the sidewall is more rounded in the second region than in the first region.

    METHOD OF FORMING ACOUSTIC WAVE DEVICE WITH SELECTIVELY ROUNDED INTERDIGITAL TRANSDUCER ELECTRODE

    公开(公告)号:US20240223149A1

    公开(公告)日:2024-07-04

    申请号:US18530618

    申请日:2023-12-06

    IPC分类号: H03H3/08 H03H9/145 H03H9/25

    CPC分类号: H03H3/08 H03H9/14538 H03H9/25

    摘要: A method of forming an acoustic wave device is disclosed. The method can include providing a piezoelectric layer, forming an interdigital transducer electrode with the piezoelectric layer, and selectively removing at least a portion of the interdigital transducer electrode. The interdigital transducer electrode includes a finger extending from a bus bar. The finger has a first region and a second region between the first region and the bus bar. The finger has a lower side, an upper side opposite the lower side, a sidewall between the lower side and the upper side, and a corner between the upper side and the sidewall. Selectively removing at least a portion of the interdigital transducer electrode includes selectively removing at least a portion of the second region of the finger such that the corner in the second region of the finger has a more rounded corner than the corner in the first region.