ACOUSTIC WAVE DEVICE HAVING PIEZOELECTRIC LAYER STRUCTURE WITH SLOPED REGION

    公开(公告)号:US20250007487A1

    公开(公告)日:2025-01-02

    申请号:US18754733

    申请日:2024-06-26

    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.

    PACKAGED ACOUSTIC WAVE DEVICES WITH MULTILAYER PIEZOELECTRIC SUBSTRATE

    公开(公告)号:US20240396519A1

    公开(公告)日:2024-11-28

    申请号:US18673830

    申请日:2024-05-24

    Abstract: A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a wafer level packaging structure having a shield structure base, a multi-layer piezoelectric substrate including a piezoelectric layer and a support substrate, and an interdigital transducer electrode in electrical communication with the piezoelectric layer. A difference between a coefficient of thermal expansion of the shield structure base and a coefficient of thermal expansion of the support substrate is 13 ppm/deg or less.

    Antenna arrays with multiple feeds and varying pitch for wideband frequency coverage

    公开(公告)号:US12143144B2

    公开(公告)日:2024-11-12

    申请号:US17654895

    申请日:2022-03-15

    Abstract: Antenna arrays with multiple feeds and varying pitch are disclosed. In certain embodiments, a radio frequency (RF) module includes a module substrate, a semiconductor die attached to the module substrate, and an antenna array attached to the module substrate. The semiconductor die includes a plurality of power amplifiers configured to amplify a corresponding plurality of RF signals to generate a plurality of amplified RF signals. The antenna array is configured to receive the plurality of amplified RF signals from the plurality of power amplifiers, and includes a plurality of antenna elements arranged with a varying pitch. Each of the plurality of antenna elements includes two or more signal feeds.

    FILTER ASSEMBLY OPERATING AT A WIDER PASSBAND WITH IMPROVED REFLECTION COEFFICIENT

    公开(公告)号:US20240250435A1

    公开(公告)日:2024-07-25

    申请号:US18157202

    申请日:2023-01-20

    CPC classification number: H01Q9/0485 H01Q9/24 H03H9/6483

    Abstract: A filter assembly operating at wider passband with an enhanced reflection coefficient is provided herein. In certain embodiments, the filter assembly comprises a first filter configured to allow signals received via an antenna node to pass at a first passband, the first filter including a plurality of resonators connected in series and parallel arms, the plurality of resonators of the first filter including a first type of resonator configured to broaden the first passband, at least a series resonator nearest to the antenna node or a shunt resonator nearest to the antenna node among the plurality of resonators of the first filter being a second type of resonator configured to improve reflection characteristics at a stopband of the first filter, and a second filter configured to allow the signals received via the antenna node to pass at a second passband using the second type of resonators.

    METHOD OF MANUFACTURE OF ACOUSTIC WAVE DEVICE WITH TRENCH PORTIONS FOR TRANSVERSE MODE SUPPRESSION

    公开(公告)号:US20230327630A1

    公开(公告)日:2023-10-12

    申请号:US18131044

    申请日:2023-04-05

    CPC classification number: H03H3/08 H03H9/25

    Abstract: A method of manufacturing an acoustic wave device is provided. The method of manufacturing the acoustic wave device comprises providing a layer of piezoelectric material, disposing a pair of interdigital transducer electrodes on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar towards an edge region of the interdigital transducer electrode at the distal ends of the electrode fingers, and etching trench portions into the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The formation of the trench portions through etching results in an easier fabrication, that is less likely to damage the interdigital transducer electrodes.

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