公开(公告)号：US20250007488A1

公开(公告)日：2025-01-02

申请号：US18754766

申请日：2024-06-26

Applicant: Skyworks Solutions, Inc.

Inventor： Rei Goto ,  Yuya Hiramatsu

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, and a second piezoelectric layer over the first piezoelectric layer. The second piezoelectric layer has a first region with a first thickness and a second region with a second thickness different from the first thickness. The surface acoustic wave device can include a first acoustic wave element that is positioned in the first region, and a second acoustic wave element that is positioned in the second region.

公开(公告)号：US20230208399A1

公开(公告)日：2023-06-29

申请号：US18145347

申请日：2022-12-22

Applicant: Skyworks Solutions, Inc.

Inventor： Rei Goto ,  Gong Bin Tang ,  Yuya Hiramatsu ,  Hironori Fukuhara

IPC: H03H9/64

CPC classification number: H03H9/6473 ,  H03H9/6483

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a multilayer piezoelectric substrate and an interdigital transducer electrode over the multilayer piezoelectric substrate. The interdigital transducer electrode includes a first layer and a second layer over the first layer. The interdigital transducer electrode has a non-zero tilt angle that provides an improved quality factor as compared to a zero tilt angle. The acoustic wave device is configured to generate a surface acoustic wave having a wavelength L. A total number of fingers of the interdigital transducer electrode is between 50 L and 100 L. A width between a finger of the interdigital transducer electrode and an adjacent finger of interdigital transducer electrode is between 20 L and 40 L.

公开(公告)号：US20230208385A1

公开(公告)日：2023-06-29

申请号：US18069414

申请日：2022-12-21

Applicant: Skyworks Solutions, Inc.

Inventor： Yuya Hiramatsu ,  Gong Bin Tang

IPC: H03H9/02 ,  H03H9/64 ,  H03H9/145

CPC classification number: H03H9/02574 ,  H03H9/643 ,  H03H9/14558 ,  H03H9/02559

Abstract: Acoustic wave device is disclosed. the acoustic wave device can include a piezoelectric layer and an interdigital transducer electrode over the piezoelectric layer. The interdigital transducer electrode has a non-zero tilt angle. The non-zero tilt angle can between 5° to 15°. A thickness of the interdigital transducer electrode is at least 40% of a thickness of the piezoelectric layer, 400 nm, or 0.08λ where λ is the wavelength generated by the acoustic wave device.

公开(公告)号：US20220209738A1

公开(公告)日：2022-06-30

申请号：US17565333

申请日：2021-12-29

Applicant: Skyworks Solutions, Inc.

Inventor： Yumi Torazawa ,  Yuya Hiramatsu ,  Rei Goto ,  Hironori Fukuhara

IPC: H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H3/10

Abstract: Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

公开(公告)号：US20250007489A1

公开(公告)日：2025-01-02

申请号：US18754775

申请日：2024-06-26

Applicant: Skyworks Solutions, Inc.

Inventor： Rei Goto ,  Yuya Hiramatsu

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate structure, a first piezoelectric layer over the support substrate structure, a second piezoelectric layer over the first piezoelectric layer, a first acoustic wave element in electrical communication with the first piezoelectric layer, and a second acoustic wave element in electrical communication with the second piezoelectric layer.

公开(公告)号：US11848658B2

公开(公告)日：2023-12-19

申请号：US17075039

申请日：2020-10-20

Applicant: Skyworks Solutions, Inc.

Inventor： Yuya Hiramatsu ,  Rei Goto ,  Yumi Torazawa

IPC: H03H9/02 ,  H03H9/25 ,  H03H9/145 ,  H03H9/64 ,  H03F3/24 ,  H03H9/72

CPC classification number: H03H9/02889 ,  H03F3/245 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02992 ,  H03H9/145 ,  H03H9/1457 ,  H03H9/14541 ,  H03H9/25 ,  H03H9/6406 ,  H03H9/6489 ,  H03H9/725 ,  H03F2200/451

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with hyperbolic mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.

公开(公告)号：US11811392B2

公开(公告)日：2023-11-07

申请号：US17076950

申请日：2020-10-22

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Yuya Hiramatsu ,  Rei Goto ,  Yumi Torazawa

IPC: H03H9/64 ,  H03H9/145 ,  H03H9/25 ,  H04B1/3827

CPC classification number: H03H9/6483 ,  H03H9/145 ,  H03H9/25 ,  H04B1/3827

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator that may include a piezoelectric substrate, interdigital transducer (IDT) electrodes disposed on an upper surface of the piezoelectric substrate, and a dielectric film covering the piezoelectric substrate and the IDT electrode for temperature compensation. The IDT electrodes may include bus bar electrode regions spaced apart from each other in a transverse direction perpendicular to a propagation direction of a surface acoustic wave to be excited, an overlapping region sandwiched between the bus bar regions, and gap regions defined between respective bus bar electrode regions and the overlapping region in the transverse direction. Each of the gap regions may include a dummy electrode in a dummy electrode region extending from the bus bar electrode region in the transverse direction. The dielectric film may include an open region exposing a respective bus bar electrode region and dummy electrode region.

公开(公告)号：US20210126624A1

公开(公告)日：2021-04-29

申请号：US17076950

申请日：2020-10-22

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Yuya Hiramatsu ,  Rei Goto ,  Yumi Torazawa

IPC: H03H9/64 ,  H03H9/25 ,  H03H9/145

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator that may include a piezoelectric substrate, interdigital transducer (IDT) electrodes disposed on an upper surface of the piezoelectric substrate, and a dielectric film covering the piezoelectric substrate and the IDT electrode for temperature compensation. The IDT electrodes may include bus bar electrode regions spaced apart from each other in a transverse direction perpendicular to a propagation direction of a surface acoustic wave to be excited, an overlapping region sandwiched between the bus bar regions, and gap regions defined between respective bus bar electrode regions and the overlapping region in the transverse direction. Each of the gap regions may include a dummy electrode in a dummy electrode region extending from the bus bar electrode region in the transverse direction. The dielectric film may include an open region exposing a respective bus bar electrode region and dummy electrode region.

公开(公告)号：US20250007487A1

公开(公告)日：2025-01-02

申请号：US18754733

申请日：2024-06-26

Applicant: Skyworks Solutions, Inc.

Inventor： Rei Goto ,  Yuya Hiramatsu

IPC: H03H9/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/25

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a support substrate, a piezoelectric structure that includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a third region sloped between the first region and the second region, a first surface acoustic wave element that is positioned in the first region, and a second surface acoustic wave element that is positioned in the second region.

公开(公告)号：US11705883B2

公开(公告)日：2023-07-18

申请号：US17075062

申请日：2020-10-20

Applicant: Skyworks Solutions, Inc.

Inventor： Yuya Hiramatsu ,  Rei Goto ,  Yumi Torazawa

IPC: H03H9/02 ,  H03H9/25 ,  H03H9/145 ,  H03H9/64 ,  H03F3/24 ,  H03H9/72

CPC classification number: H03H9/02889 ,  H03F3/245 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02992 ,  H03H9/145 ,  H03H9/1457 ,  H03H9/14541 ,  H03H9/25 ,  H03H9/6406 ,  H03H9/6489 ,  H03H9/725 ,  H03F2200/451

Abstract: Aspects of this disclosure relate to an acoustic wave resonator with transverse mode suppression. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can be a conductive strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. A layer of the mass loading strip can have a density that is at least as high as a density of a material of the interdigital transducer electrode. The material of the interdigital transducer can impact acoustic properties of the acoustic wave resonator.