公开(公告)号：US11855603B2

公开(公告)日：2023-12-26

申请号：US17657533

申请日：2022-03-31

申请人： Skyworks Solutions, Inc.

发明人： Satoru Matsuda ,  Tatsuya Fujii ,  Yoshiro Kabe ,  Kenji Nagano

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03H9/145

CPC分类号： H03H9/02574 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02842 ,  H03H9/14502 ,  H03H9/14541 ,  H03H9/25 ,  H03H9/6406 ,  H03H9/725

摘要： Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.

公开(公告)号：US20200266796A1

公开(公告)日：2020-08-20

申请号：US16790408

申请日：2020-02-13

申请人： Skyworks Solutions, Inc.

发明人： Satoru Matsuda ,  Tatsuya Fujii ,  Yoshiro Kabe ,  Kenji Nagano

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/145 ,  H03H9/64 ,  H03H9/72

摘要： An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.

公开(公告)号：US20220224308A1

公开(公告)日：2022-07-14

申请号：US17657533

申请日：2022-03-31

申请人： Skyworks Solutions, Inc.

发明人： Satoru Matsuda ,  Tatsuya Fujii ,  Yoshiro Kabe ,  Kenji Nagano

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72 ,  H03H9/145

摘要： Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.

公开(公告)号：US20240088865A1

公开(公告)日：2024-03-14

申请号：US18511405

申请日：2023-11-16

申请人： Skyworks Solutions, Inc.

发明人： Satoru Matsuda ,  Tatsuya Fujii ,  Yoshiro Kabe ,  Kenji Nagano

IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

CPC分类号： H03H9/02574 ,  H03H9/02559 ,  H03H9/02834 ,  H03H9/02842 ,  H03H9/14502 ,  H03H9/14541 ,  H03H9/25 ,  H03H9/6406 ,  H03H9/725

摘要： An acoustic wave device is disclosed. The acoustic wave device includes a piezoelectric layer, an interdigital transducer electrode positioned over the piezoelectric layer, and an anti-refection layer over a conductive layer of the interdigital transducer electrode. The conductive layer can include aluminum, for example. The anti-reflection layer can include silicon. The anti-reflection layer can be free from a material of the interdigital transducer electrode. The acoustic wave device can further include a temperature compensation layer positioned over the anti-reflection layer in certain embodiments.