METHOD OF MANUFACTURE OF ACOUSTIC WAVE DEVICE WITH TRENCH PORTIONS FOR TRANSVERSE MODE SUPPRESSION

    公开(公告)号:US20230327630A1

    公开(公告)日:2023-10-12

    申请号:US18131044

    申请日:2023-04-05

    CPC classification number: H03H3/08 H03H9/25

    Abstract: A method of manufacturing an acoustic wave device is provided. The method of manufacturing the acoustic wave device comprises providing a layer of piezoelectric material, disposing a pair of interdigital transducer electrodes on an upper surface of the layer of piezoelectric material, each interdigital transducer electrode including a bus bar and a plurality of electrode fingers extending from the bus bar towards an edge region of the interdigital transducer electrode at the distal ends of the electrode fingers, and etching trench portions into the upper surface of the layer of piezoelectric material, the trench portions overlapping with the edge regions of the interdigital transducer electrodes. The formation of the trench portions through etching results in an easier fabrication, that is less likely to damage the interdigital transducer electrodes.

    ACOUSTIC WAVE FILTER WITH MULTIPLE ACOUSTIC WAVE DEVICES ON A SUBTRATE

    公开(公告)号:US20220271734A1

    公开(公告)日:2022-08-25

    申请号:US17651300

    申请日:2022-02-16

    Abstract: An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

    BULK ACOUSTIC WAVE DEVICES WITH SUPPRESSED NONLINEAR RESPONSE

    公开(公告)号:US20230318570A1

    公开(公告)日:2023-10-05

    申请号:US18193029

    申请日:2023-03-30

    CPC classification number: H03H9/568 H03H9/564

    Abstract: A first acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The first acoustic wave device can have a first shape and a first area. A second acoustic wave device can be coupled to the first acoustic wave device to at least partially cancel a second harmonic response of the first acoustic wave device. The second acoustic wave device can have a piezoelectric layer between a first electrode and a second electrode. The second acoustic wave device can have a second shape that is different from the first shape and a second area that is within a threshold amount of the first area.

    METHOD OF MANUFACTURING ACOUSTIC WAVE DEVICE WITH MULTI-LAYER PIEZOELECTRIC SUBSTRATE

    公开(公告)号:US20240364290A1

    公开(公告)日:2024-10-31

    申请号:US18655877

    申请日:2024-05-06

    CPC classification number: H03H3/08 H10N30/40 H03H2003/0435 H10N30/50

    Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a single crystal support layer, an intermediate single crystal layer positioned over the single crystal support layer, a lithium based piezoelectric layer positioned over the intermediate single crystal layer, and an interdigital transducer electrode positioned over the lithium based piezoelectric layer, the surface acoustic wave device configured to generate a surface acoustic wave. The single crystal layer can be a quartz layer, such as a z-propagation quartz layer. A thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the intermediate single crystal layer, and the thermal conductivity of the single crystal support layer is greater than a thermal conductivity of the lithium based piezoelectric layer.

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