公开(公告)号：US12009804B2

公开(公告)日：2024-06-11

申请号：US17460737

申请日：2021-08-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Ventsislav Yantchev

IPC: H03H9/25 ,  H03H9/02 ,  H03H9/145 ,  H03H9/56 ,  H03H9/64

CPC classification number: H03H9/25 ,  H03H9/02228 ,  H03H9/02559 ,  H03H9/14582 ,  H03H9/56 ,  H03H9/6406

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a piezoelectric plate having front and back surfaces and an interdigital transducer (IDT). The IDT has a first pitch/mark zone with interleaved fingers having a pitch equal to a first pitch value P1 and a mark equal to a first mark value M1, and a second pitch/mark zone with interleaved fingers having a pitch equal to a second pitch value P2 and a mark equal to a second mark value M2. A radio frequency signal applied to the IDT causes excitation of a same shear primary acoustic mode by both the first pitch/mark zone and the second pitch/mark zone. P1, M1, P2, and M2, are selected such that an amplitude of spurious modes is reduced as compared to a device having a same primary acoustic mode and a single pitch/mark zone.

公开(公告)号：US11711065B2

公开(公告)日：2023-07-25

申请号：US17141065

申请日：2021-01-04

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: A61B5/1459 ,  A61B5/00 ,  A61B5/145 ,  H03H9/02 ,  H03H3/02 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  H03H3/04 ,  H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H10N30/085

CPC classification number: H03H9/02834 ,  A61B5/1459 ,  A61B5/14546 ,  A61B5/685 ,  H03H3/02 ,  H03H3/04 ,  H03H3/10 ,  H03H9/02102 ,  H03H9/02574 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/6489 ,  H10N30/072 ,  H10N30/87 ,  H10N39/00 ,  A61B2562/0204 ,  H03H2003/0407 ,  H10N30/085

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US10020789B2

公开(公告)日：2018-07-10

申请号：US14840834

申请日：2015-08-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. Adkisson ,  Panglijen Candra ,  Thomas J. Dunbar ,  Mark D. Jaffe ,  Anthony K. Stamper ,  Randy L. Wolf

IPC: H03H9/54 ,  H03H3/08 ,  H03H3/007 ,  H03H9/56 ,  H03H9/10 ,  H03H9/24 ,  G06F17/50 ,  H03H9/02 ,  H03H9/64 ,  H03H3/02 ,  H03H9/15

CPC classification number: H03H3/007 ,  G06F17/5063 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02992 ,  H03H9/1071 ,  H03H9/2447 ,  H03H9/2452 ,  H03H9/2457 ,  H03H9/2463 ,  H03H9/54 ,  H03H9/56 ,  H03H9/64 ,  H03H2003/022 ,  H03H2003/023 ,  H03H2003/027 ,  H03H2009/155 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

公开(公告)号：US09979378B2

公开(公告)日：2018-05-22

申请号：US14948222

申请日：2015-11-20

Applicant: Analog Devices, Inc.

Inventor： Florian Thalmayr

IPC: H03H9/02 ,  H03H9/56 ,  H03H9/145 ,  H01L41/04 ,  H01L41/253 ,  H03B5/32 ,  H03H9/17 ,  H03H9/70

CPC classification number: H03H9/56 ,  H01L41/042 ,  H01L41/253 ,  H03B5/32 ,  H03H9/02031 ,  H03H9/02102 ,  H03H9/02228 ,  H03H9/145 ,  H03H9/17 ,  H03H9/706

Abstract: Mechanical resonators including doped piezoelectric active layers are described. The piezoelectric active layer(s) of the mechanical resonator may be doped with a dopant type and concentration suitable to increase the electromechanical coupling coefficient of the active layer. The increase in electromechanical coupling coefficient may all for improved performance and smaller size mechanical resonators than feasible without using the doping.

公开(公告)号：US09503050B2

公开(公告)日：2016-11-22

申请号：US14810122

申请日：2015-07-27

Applicant: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Yosuke Hamaoka ,  Mitsuhiro Furukawa ,  Toru Yamaji

IPC: H03H9/72 ,  H03H3/10 ,  H03H9/02 ,  H03H9/10

CPC classification number: H03H9/1092 ,  H03H3/02 ,  H03H3/10 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/1064 ,  H03H9/13 ,  H03H9/19 ,  H03H9/56 ,  H03H9/70 ,  H03H9/725

Abstract: An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.

Abstract translation: 可以减小弹性波的装置。 弹性波装置的一些例子包括基板，设置在基板上的IDT电极，设置在基板上方并与IDT电极连接的布线电极，密封体内IDT电极激发弹性波的激发空间的密封体， 以及设置在布线电极上方并形成密封体的一部分的密封壁。 布线电极的外周包括突起。 在一个示例中，布线电极包括设置在基板的上表面上的第一布线电极和设置在第一布线电极的上表面上的第二布线电极，第二布线电极的外周设有突起。

公开(公告)号：US20160036414A1

公开(公告)日：2016-02-04

申请号：US14810122

申请日：2015-07-27

Applicant: SKYWORKS PANASONIC FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Yosuke Hamaoka ,  Mitsuhiro Furukawa

IPC: H03H9/72 ,  H03H3/10 ,  H03H9/64 ,  H03H9/25 ,  H03H9/02

CPC classification number: H03H9/1092 ,  H03H3/02 ,  H03H3/10 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/1064 ,  H03H9/13 ,  H03H9/19 ,  H03H9/56 ,  H03H9/70 ,  H03H9/725

Abstract: An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.

Abstract translation: 可以减小弹性波的装置。 弹性波装置的一些例子包括基板，设置在基板上的IDT电极，设置在基板上方并与IDT电极连接的布线电极，密封体内IDT电极激发弹性波的激发空间的密封体， 以及设置在布线电极上方并形成密封体的一部分的密封壁。 布线电极的外周包括突起。 在一个示例中，布线电极包括设置在基板的上表面上的第一布线电极和设置在第一布线电极的上表面上的第二布线电极，第二布线电极的外周设有突起。

公开(公告)号：US20150244345A1

公开(公告)日：2015-08-27

申请号：US14700744

申请日：2015-04-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： James W. ADKISSON ,  Panglijen CANDRA ,  Thomas J. DUNBAR ,  Mark D. JAFFE ,  Robert K. LEIDY ,  Anthony K. STAMPER

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/545 ,  H03H9/0547 ,  H03H9/171 ,  H03H9/173 ,  H03H9/56 ,  H03H2009/02204 ,  Y10T29/42

Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

Abstract translation: 公开了可调谐滤波器结构，制造方法和设计结构。 形成滤波器结构的方法包括在空腔结构上形成压电谐振滤波器。 压电谐振滤波器的形成包括：在压电材料的一侧上形成上电极; 以及在所述压电材料的相对侧上形成下电极。 该方法还包括在致动时与压电谐振滤波器接触的位置处形成微机电结构（MEMS）悬臂梁。

公开(公告)号：US08872604B2

公开(公告)日：2014-10-28

申请号：US13101376

申请日：2011-05-05

Applicant: Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

Inventor： Dariusz Burak ,  Chris Feng ,  Alexandre Shirakawa ,  Stefan Bader

IPC: H03H9/54 ,  H03H9/56 ,  H03H9/58 ,  H03H9/205

CPC classification number: H03H9/56 ,  H03H9/132 ,  H03H9/205 ,  H03H9/566 ,  H03H9/582 ,  H03H9/585 ,  H03H9/587 ,  H03H2003/028

Abstract: A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

Abstract translation: 一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。 第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。 第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

公开(公告)号：US08729982B2

公开(公告)日：2014-05-20

申请号：US13127920

申请日：2009-11-05

Applicant: Dorian Gachon ,  Sylvain Ballandras

Inventor： Dorian Gachon ,  Sylvain Ballandras

IPC: H03H9/54 ,  H03H9/56 ,  H03H9/02

CPC classification number: H03H9/0207 ,  H03H9/02031 ,  H03H9/02078 ,  H03H9/54 ,  H03H9/56 ,  H03H9/564 ,  Y10T29/42

Abstract: The elementary filter of the HBAR type includes two resonators (20, 22) of the HBAR type which are each formed by a transducer (8) and a substrate (12) which are coupled in a suitable manner by electroacoustic waves. The first resonator (20), the second resonator (22) and the coupling element (28) by way of evanescent waves include the same monobloc acoustic substrate (12) which is arranged facing and coupled to the piezoelectric transducer (8) by waves having the same longitudinal or transverse vibration mode through the same reference electrode (10).

Abstract translation: HBAR型的基本滤波器包括HBAR型的两个谐振器（20,22），每个谐振器由换能器（8）和基板（12）形成，该谐振器以合适的方式通过电声耦合。 第一谐振器（20），第二谐振器（22）和耦合元件（28）通过ev逝波包括相同的整体声学衬底（12），其被布置成面对并耦合到压电换能器（8） 相同的纵向或横向振动模式通过相同的参比电极（10）。

公开(公告)号：US08298486B2

公开(公告)日：2012-10-30

申请号：US12736805

申请日：2009-03-02

Applicant: Shigenori Watanabe ,  Takeru Mutoh ,  Mitsuaki Koyama

Inventor： Shigenori Watanabe ,  Takeru Mutoh ,  Mitsuaki Koyama

IPC: G01N15/06 ,  G01N33/00 ,  G01N33/48

CPC classification number: G01N5/02 ,  G01G3/13 ,  G01G3/16 ,  G01G3/18 ,  G01N1/405 ,  G01N33/0004 ,  H03B5/323 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/132 ,  H03H9/56 ,  H03H2003/0428 ,  H03H2003/0435 ,  H03H2003/0471

Abstract: Objects of the present invention is to provide a piezoelectric resonator having high frequency stability and a sensing sensor using the piezoelectric resonator.In the present invention, a piezoelectric resonator 1 has: a first oscillation area 105 which is provided in a piezoelectric piece 100 and from which a first oscillation frequency is taken out; a second oscillation area which is provided in an area 105 different from the first oscillation area 106 via an elastic boundary area 107 and from which a second oscillation frequency is taken out; and excitation electrodes 101 to 103 provided on one surface side and another surface side of the oscillation areas 105, 106 across the piezoelectric piece 100, and a frequency difference between the first oscillation frequency and the second oscillation frequency is not less than 0.2% nor greater than 2.2% of these oscillation frequencies.

Abstract translation: 本发明的目的是提供一种具有高频稳定性的压电谐振器和使用压电谐振器的感测传感器。 在本发明中，压电谐振器1具有：第一振荡区域105，其被设置在压电片100中并从中取出第一振荡频率; 第二振荡区域，经由弹性边界区域107设置在与第一振荡区域106不同的区域105中，并从其中取出第二振荡频率; 并且设置在振动区域105,106的压电片100的一个表面侧和另一个表面侧上的激励电极101至103以及第一振荡频率和第二振荡频率之间的频率差不小于0.2％或更大 超过这些振荡频率的2.2％。