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公开(公告)号：US10284171B2
公开(公告)日：2019-05-07
申请号：US15449104
申请日：2017-03-03
摘要： An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.
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公开(公告)号：US10075146B2
公开(公告)日：2018-09-11
申请号：US15344878
申请日：2016-11-07
发明人： Yosuke Hamaoka , Mitsuhiro Furukawa , Toru Yamaji
IPC分类号： H03H9/10 , H03H9/02 , H03H3/10 , H03H3/02 , H03H9/13 , H03H9/56 , H03H9/72 , H03H9/19 , H03H9/70
CPC分类号： H03H9/1092 , H03H3/02 , H03H3/10 , H03H9/02984 , H03H9/02992 , H03H9/1064 , H03H9/13 , H03H9/19 , H03H9/56 , H03H9/70 , H03H9/725
摘要： An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.
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3.发明申请公开(公告)号：US20180041187A1
公开(公告)日：2018-02-08
申请号：US15665740
申请日：2017-08-01
发明人： Yuji Yashiro , Hideki Yamabe , Hidehito Shimizu , Satoru Matsuda , Atsushi Nishimura , Hironori Fukuhara , Toru Yamaji
IPC分类号： H03H9/02
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02897 , H03H9/02929 , H03H9/14541
摘要： Examples are directed to suppressing crack development in a surface acoustic wave (SAW) element including a double-layered IDT electrode. In one example the SAW element includes a piezoelectric substrate, a comb-shaped electrode formed on a top surface of the piezoelectric substrate, and an insulation layer formed on the top surface of the piezoelectric substrate to cover the comb-shaped electrode. The comb-shaped electrode includes a plurality of electrode fingers each having a first metal layer of a first metal formed on the top surface of the piezoelectric substrate, a second metal layer of a second metal formed on the first metal layer, and a second protective film at least partially covering the second metal layer, the second metal layer being covered by the second protective film and the first metal layer.
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公开(公告)号：US09748924B2
公开(公告)日：2017-08-29
申请号：US14809994
申请日：2015-07-27
IPC分类号： H03H9/25 , H03H9/02 , H01L41/047
CPC分类号： H03H9/25 , H01L41/047 , H03H9/02818 , H03H9/02992
摘要： An elastic wave device includes an interdigital transducer (IDT) electrode in contact with a piezoelectric substrate having a bus bar electrode region including one of a first bus bar electrode and a second bus bar electrode of the IDT electrode, an alternately disposed region where first electrode fingers are alternately disposed with second electrode fingers of the IDT electrode, and an intermediate region including one of the first electrode fingers and the second electrode fingers. A dielectric film is formed in at least part of the intermediate region and in contact with an upper surface of the IDT electrode. The dielectric film includes a medium in which an acoustic velocity of a transverse wave propagating in the dielectric film is lower than an acoustic velocity of a main elastic wave of the alternately disposed region. The dielectric film is not formed in the alternately disposed region.
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5.发明申请公开(公告)号：US20170222620A1
公开(公告)日：2017-08-03
申请号：US15329172
申请日：2015-07-24
CPC分类号： H03H9/02992 , H03H9/02834 , H03H9/14541 , H03H9/25 , H03H9/64
摘要： An acoustic wave element (100) according to certain examples includes a piezoelectric body (130), an interdigital transducer (IDT) electrode (140, 150) disposed above the piezoelectric body (130), and a connection electrode (160) disposed above the piezoelectric body (130) and connected to the IDT electrode (140, 150). A first insulation layer (172) covers the connection electrode (160), and a second insulation layer (174a, 174b) covers the IDT electrode (140, 150). The first insulation layer (172) disposed above the connection electrode (160) has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body (130) and the second insulation layer (174b) disposed above the IDT electrode (150) has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body (130). The first thickness T is less than the second thickness K based on FIG. 2C and the relevant description.
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公开(公告)号：US09641151B2
公开(公告)日：2017-05-02
申请号：US14810165
申请日：2015-07-27
发明人： Satoru Ikeuchi
CPC分类号： H03H9/02559 , H03H9/02834 , H03H9/6483 , H03H9/725
摘要： An elastic wave filter including a substrate, a signal line disposed on the substrate and connecting a first signal terminal to a second signal terminal, a plurality of series resonators connected to the signal line in series, and a plurality of parallel resonators connected to the signal line. At least one of the series resonator having an anti-resonant frequency closest to the passband of the filter among the plurality of series resonators, and/or the parallel resonator having a resonant frequency closest to the passband of the filter among the plurality of parallel resonators, is covered with a dielectric film that is relatively thicker than a dielectric film covering the other series and/or parallel resonators.
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公开(公告)号：US20170040969A1
公开(公告)日：2017-02-09
申请号：US15332279
申请日：2016-10-24
发明人： Tomohiro Iwasaki , Hiroyuki Nakamura , Toru Yamaji , Mitsunori Miyanari , Masahiro Yasumi , Shoji Okamoto
CPC分类号： H03H9/02559 , H03H3/08 , H03H3/10 , H03H9/02834 , H03H9/02937 , H03H9/02984 , H03H9/131 , H03H9/132
摘要： An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.
摘要翻译： 声波装置包括设置在压电基板的上表面上方的IDT电极，并且包括构造成激励主声波的多个电极指。 由氧化物构成的第一电介质膜设置在压电基板的上表面的上方并覆盖多个电极指。 由非氧化物构成的第二电介质膜设置在第一电介质膜与多个电极指中的每一个之间。 第三绝缘膜设置在压电基片和多个电极指之间。 通过第三电介质膜传播的横波的速度大于通过压电基片传播的主声波的速度。 第三电介质膜与多个电极指的相邻电极指之间的第一电介质膜接触。
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公开(公告)号：US09467117B2
公开(公告)日：2016-10-11
申请号：US14248111
申请日：2014-04-08
CPC分类号： H03H9/725 , H03H9/02834 , H03H9/14588 , H03H9/205 , H03H9/56 , H03H9/568 , H03H9/605 , H03H9/6483 , H03H9/70 , H03H9/706
摘要： In a ladder-type elastic wave filter, a resonance frequency of a second parallel resonator is higher than that of a series resonator and lower than an antiresonance frequency of a series resonator. With this configuration, an attenuation pole is formed by the second parallel resonator at a frequency region lower than an attenuation pole formed by the series resonator in a frequency region higher than the passband of the ladder-type elastic wave filter.
摘要翻译： 在梯型弹性波滤波器中，第二并联谐振器的谐振频率高于串联谐振器的谐振频率，并且低于串联谐振器的反共振频率。 利用这种配置，在比梯形弹性波滤波器的通带高的频率区域中，在低于由串联谐振器形成的衰减极点的频率区域处，由第二并联谐振器形成衰减极。
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公开(公告)号：US11863156B2
公开(公告)日：2024-01-02
申请号：US16545037
申请日：2019-08-20
发明人： Tomohiro Iwasaki , Hiroyuki Nakamura , Toru Yamaji , Mitsunori Miyanari , Masahiro Yasumi , Shoji Okamoto
CPC分类号： H03H9/02559 , H03H3/08 , H03H3/10 , H03H9/02834 , H03H9/02937 , H03H9/02984 , H03H9/131 , H03H9/132
摘要： A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.
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公开(公告)号：US10778183B2
公开(公告)日：2020-09-15
申请号：US15651216
申请日：2017-07-17
发明人： Yoshiaki Ando , Satoshi Niwa , Hiroyuki Nakamura
摘要： Aspects and examples provide electronic elements and filter devices configured to prevent deterioration of the propagation characteristics caused by input and output signals being electromagnetically coupled to an electric conductor side wall. In one example an electronic filter includes an element substrate having a top surface, a bottom surface, a side surface, and piezoelectric body. A circuit including a plurality of SAW resonators is formed on the top surface of the element substrate. The electronic filter further includes a sealing substrate having a top surface and a bottom surface, and a side wall including an electric conductor and formed to define a cavity between the top surface of the element substrate and the bottom surface of the sealing substrate, the side wall enclosing a periphery of the circuit and being connected to a ground potential of the circuit.
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