公开(公告)号：US20170040969A1

公开(公告)日：2017-02-09

申请号：US15332279

申请日：2016-10-24

Applicant: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Tomohiro Iwasaki ,  Hiroyuki Nakamura ,  Toru Yamaji ,  Mitsunori Miyanari ,  Masahiro Yasumi ,  Shoji Okamoto

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/13

CPC classification number: H03H9/02559 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/02937 ,  H03H9/02984 ,  H03H9/131 ,  H03H9/132

Abstract: An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.

Abstract translation: 声波装置包括设置在压电基板的上表面上方的IDT电极，并且包括构造成激励主声波的多个电极指。 由氧化物构成的第一电介质膜设置在压电基板的上表面的上方并覆盖多个电极指。 由非氧化物构成的第二电介质膜设置在第一电介质膜与多个电极指中的每一个之间。 第三绝缘膜设置在压电基片和多个电极指之间。 通过第三电介质膜传播的横波的速度大于通过压电基片传播的主声波的速度。 第三电介质膜与多个电极指的相邻电极指之间的第一电介质膜接触。

公开(公告)号：US10439585B2

公开(公告)日：2019-10-08

申请号：US15332279

申请日：2016-10-24

Applicant: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Tomohiro Iwasaki ,  Hiroyuki Nakamura ,  Toru Yamaji ,  Mitsunori Miyanari ,  Masahiro Yasumi ,  Shoji Okamoto

IPC: H03H3/10 ,  H03H3/08 ,  H03H9/02 ,  H03H9/13

Abstract: An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.

公开(公告)号：US11863156B2

公开(公告)日：2024-01-02

申请号：US16545037

申请日：2019-08-20

Applicant: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Tomohiro Iwasaki ,  Hiroyuki Nakamura ,  Toru Yamaji ,  Mitsunori Miyanari ,  Masahiro Yasumi ,  Shoji Okamoto

IPC: H03H9/02 ,  H03H3/10 ,  H03H9/13 ,  H03H3/08

CPC classification number: H03H9/02559 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/02937 ,  H03H9/02984 ,  H03H9/131 ,  H03H9/132

Abstract: A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.

公开(公告)号：US09496846B2

公开(公告)日：2016-11-15

申请号：US14176149

申请日：2014-02-10

Applicant: SKYWORKS FILTER SOLUTIONS JAPAN CO., LTD.

Inventor： Tomohiro Iwasaki ,  Hiroyuki Nakamura ,  Toru Yamaji ,  Mitsunori Miyanari ,  Masahiro Yasumi ,  Shoji Okamoto

IPC: H03H9/02 ,  H03H3/10 ,  H03H9/13

CPC classification number: H03H9/02559 ,  H03H3/08 ,  H03H3/10 ,  H03H9/02834 ,  H03H9/02937 ,  H03H9/02984 ,  H03H9/131 ,  H03H9/132

Abstract: An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion.

Abstract translation: 声波装置包括压电基板，设置在压电基板的上表面上方的多个电极指的IDT电极，设置在基板的上表面上方的用于覆盖电极指的氧化物的第一电介质膜，以及第二 由设置在电极指的上表面上以及在第一电介质膜和每个电极指之间的非氧化物制成的电介质膜。 第一电介质膜在彼此相邻的多个电极指之间的电极指之间的位置处接触压电基板的上表面。 声波装置防止IDT电极的电极指针腐蚀。