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    Method of forming a gate quality oxide-compound semiconductor structure
    5.
    发明授权
    Method of forming a gate quality oxide-compound semiconductor structure 失效
    形成栅极氧化物半导体结构的方法

    公开(公告)号：US6159834A

    公开(公告)日：2000-12-12

    申请号：US22595

    申请日：1998-02-12

    Applicant: Zhiyi (Jimmy) Yu ,  Matthias Passlack ,  Brian Bowers ,  Corey Daniel Overgaard ,  Ravindranath Droopad ,  Jonathan Kwadwo Abrokwah

    Inventor： Zhiyi (Jimmy) Yu ,  Matthias Passlack ,  Brian Bowers ,  Corey Daniel Overgaard ,  Ravindranath Droopad ,  Jonathan Kwadwo Abrokwah

    IPC: H01L21/28 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/4763

    CPC classification number: H01L21/28264 ,  H01L21/31604 ,  H01L21/31666

    Abstract: A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.

    Abstract translation: 通过在超高真空（UHV）系统（20）中提供具有原子级和化学清洁的半导体表面的III-V化合物半导体晶片结构（13）的步骤形成栅极质量氧化物 - 化合物半导体结构（10） 将氧化镓的分子束（26）引导到晶片结构的表面上以引发氧化物沉积，以及提供原子氧的第二光束（28）以在表面上形成具有低缺陷密度的Ga 2 O 3层（14） 的晶片结构。 当第一个1-2单层的Ga2O3完成时，第二个原子氧束被提供。 通过从结晶Ga 2 O 3或没食子酸酯源的热蒸发提供氧化镓的分子束，并且氧原子束由RF或微波等离子体放电，热解离或中性电子刺激的解吸原子源提供。

    Process for producing a uniform oxide layer on a compound semiconductor substrate
    6.
    发明授权
    Process for producing a uniform oxide layer on a compound semiconductor substrate 失效
    在化合物半导体基板上生产均匀的氧化物层的方法

    公开(公告)号：US5214003A

    公开(公告)日：1993-05-25

    申请号：US640429

    申请日：1991-01-31

    Applicant: Haruhito Shimakura ,  Osamu Oda ,  Keiji Kainosho

    Inventor： Haruhito Shimakura ,  Osamu Oda ,  Keiji Kainosho

    IPC: H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/336 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

    CPC classification number: H01L29/66522 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/28581 ,  H01L21/31666 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  Y10S148/065 ,  Y10S148/118 ,  Y10S148/119

    Abstract: An inventive process for producing a semiconductor device has the steps of: putting a compound semiconductor substrate, an element of the substrate elements having a higher vapor pressure in a quartz ampoule, evacuating the ampoule, introducing oxygen gas into the ampoule and then sealing the ampoule; heating the ampoule to produce an oxide layer on the surface of the compound semiconductor substrate; and forming an electrode metal layer on the oxide layer to produce a MOS diode with a low interface trap density or a Schottky diode with a high barrier height and small ideal factor. Thus, the process produces a Schottky diode of a good forward current/voltage characteristic, low reverse current and superior rectification performance and a MESFET of a low dispersion at threshold voltage.

    Abstract translation: PCT No.PCT / JP90 / 00690 Sec。 371日期1991年1月31日 102（e）日期1991年1月31日PCT提交1990年5月29日PCT公布。 出版物WO90 / 15436 日本1990年12月13日。本发明的半导体器件制造方法具有以下步骤：将化合物半导体衬底，具有较高蒸气压的衬底元件的元素置于石英安瓿中，抽空安瓿，将氧气引入 安瓿然后密封安瓿; 加热安瓿以在化合物半导体衬底的表面上产生氧化物层; 在氧化物层上形成电极金属层，制成具有低界面陷阱密度的MOS二极管或具有高势垒高度和小理想因子的肖特基二极管。 因此，该工艺产生具有良好的正向电流/电压特性，低反向电流和优异的整流性能的肖特基二极管以及在阈值电压下具有低色散的MESFET。

    MOS Devices
    7.
    发明授权
    MOS Devices 失效
    MOS器件

    公开(公告)号：US4291327A

    公开(公告)日：1981-09-22

    申请号：US114683

    申请日：1980-01-23

    Applicant: Won-Tien Tsang

    Inventor： Won-Tien Tsang

    IPC: H01L21/28 ,  H01L21/316 ,  H01L29/34

    CPC classification number: H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/31683

    Abstract: An oxide layer (16') is formed on a GaAs body (14) by epitaxially growing a layer (12) of Al.sub.x Ga.sub.1-x As layer on a major surface (18) of the body and then thermally oxidizing the Al.sub.x Ga.sub.1-x As layer for a time period effective to convert it to an oxide. The oxidizing process is essentially self-terminating at the major surface 18. The application of this process to the fabrication of MOS capacitors and IGFETs is described.

    Abstract translation: 通过在主体的主表面（18）上外延生长Al x Ga 1-x As层的层（12），然后将Al x Ga 1-x As层热氧化，从而在GaAs体（14）上形成氧化物层（16'） 有效地将其转化为氧化物的时间段。 氧化过程在主表面18基本上自终止。描述了将该方法应用于MOS电容器和IGFET的制造。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
    9.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20120064731A1

    公开(公告)日：2012-03-15

    申请号：US13299136

    申请日：2011-11-17

    Applicant: Satoshi TANIMOTO ,  Noriaki KAWAMOTO ,  Takayuki KITOU ,  Mineo MIURA

    Inventor： Satoshi TANIMOTO ,  Noriaki KAWAMOTO ,  Takayuki KITOU ,  Mineo MIURA

    IPC: H01L21/316

    CPC classification number: H01L29/66068 ,  H01L21/049 ,  H01L21/31666 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/7802

    Abstract: A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).

    Abstract translation: 一种碳化硅半导体器件（90），包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7） 和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底 （1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。 氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底 （1）和第一氧化硅膜（O）（10）。

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