公开(公告)号：US10256290B2

公开(公告)日：2019-04-09

申请号：US15802425

申请日：2017-11-02

Applicant: Comptek Solutions Oy

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L29/02 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L21/324 ,  H01L29/201

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

公开(公告)号：US09837486B2

公开(公告)日：2017-12-05

申请号：US14854125

申请日：2015-09-15

Applicant: Comptek Solutions Oy

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L21/31 ,  H01L21/469 ,  H01L29/02 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L21/324 ,  H01L29/201

CPC classification number: H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.