公开(公告)号：US20130214331A1

公开(公告)日：2013-08-22

申请号：US13881420

申请日：2011-11-08

Applicant: Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L29/02 ,  H01L29/205 ,  H01L21/02

CPC classification number: H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract translation: 一种处理化合物半导体衬底的方法，其中在无定形天然氧化物中清洁含In III-As，III-Sb或III-P衬底的表面的真空条件下的方法，然后将清洁的衬底加热至 温度为约250-550℃，并通过将氧气引入到基底的表面上而被氧化。 本发明还涉及化合物半导体衬底，以及衬底在诸如MOSFET的晶体管的结构中的用途。

公开(公告)号：US07052780B2

公开(公告)日：2006-05-30

申请号：US10761869

申请日：2004-01-21

Applicant: Pekka Laukkanen ,  Antti Veli Antero Vähämaa

Inventor： Pekka Laukkanen ,  Antti Veli Antero Vähämaa

IPC: B32B1/00 ,  B32B15/08 ,  B32B15/14 ,  A01B29/00

CPC classification number: D21G1/0246 ,  B23P15/00 ,  C23C26/00 ,  Y10T29/49544 ,  Y10T29/49563 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12854 ,  Y10T428/1352 ,  Y10T428/1362 ,  Y10T428/31678

Abstract: The invention provides a coated composite cylinder and a machine for making paper including a coated composite cylinder. On top of said composite cylinder (1) is drawn or extruded a metal casing (2), whose metal surface is modified with a metal treatment process and/or plated with a coating layer.

Abstract translation: 本发明提供一种涂覆的复合圆筒和用于制造包括涂覆的复合圆筒的纸的机器。 在所述复合气缸（1）的顶部，拉伸或挤压金属壳体（2），其金属表面用金属处理工艺进行改性和/或镀覆有涂层。

公开(公告)号：US06699417B2

公开(公告)日：2004-03-02

申请号：US10177644

申请日：2002-06-21

Applicant: Pekka Laukkanen ,  Antti Veli Antero Vähämaa

Inventor： Pekka Laukkanen ,  Antti Veli Antero Vähämaa

IPC: B32B3130

CPC classification number: D21G1/0246 ,  B23P15/00 ,  C23C26/00 ,  Y10T29/49544 ,  Y10T29/49563 ,  Y10T428/12493 ,  Y10T428/12569 ,  Y10T428/12854 ,  Y10T428/1352 ,  Y10T428/1362 ,  Y10T428/31678

Abstract: The invention relates to a method for coating a composite cylinder. On top of said composite cylinder (1) is drawn or extruded a metal casing (2), whose metal surface is modified a metal treatment process and/or plated with a coating layer.

Abstract translation: 本发明涉及一种用于涂覆复合圆筒的方法。 在所述复合气缸（1）的顶部被拉伸或挤压金属壳体（2），其金属表面被改性为金属处理工艺和/或镀覆有涂层。

公开(公告)号：US09269763B2

公开(公告)日：2016-02-23

申请号：US13881420

申请日：2011-11-08

Applicant: Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L21/02 ,  H01L29/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract translation: 一种处理化合物半导体衬底的方法，其中在无定形天然氧化物中清洁含In III-As，III-Sb或III-P衬底的表面的真空条件下的方法，然后将清洁的衬底加热至 温度为约250-550℃，并通过将氧气引入到基底的表面上而被氧化。 本发明还涉及化合物半导体衬底，以及衬底在诸如MOSFET的晶体管的结构中的用途。