公开(公告)号：US09269763B2

公开(公告)日：2016-02-23

申请号：US13881420

申请日：2011-11-08

Applicant: Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L21/02 ,  H01L29/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract translation: 一种处理化合物半导体衬底的方法，其中在无定形天然氧化物中清洁含In III-As，III-Sb或III-P衬底的表面的真空条件下的方法，然后将清洁的衬底加热至 温度为约250-550℃，并通过将氧气引入到基底的表面上而被氧化。 本发明还涉及化合物半导体衬底，以及衬底在诸如MOSFET的晶体管的结构中的用途。

公开(公告)号：US20130214331A1

公开(公告)日：2013-08-22

申请号：US13881420

申请日：2011-11-08

Applicant: Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

Inventor： Pekka Laukkanen ,  Jouko Lang ,  Marko Punkkinen ,  Marjukka Tuominen ,  Veikko Tuominen ,  Johnny Dahl ,  Juhani Vayrynen

IPC: H01L29/02 ,  H01L29/205 ,  H01L21/02

CPC classification number: H01L29/02 ,  H01L21/02046 ,  H01L21/02109 ,  H01L21/02172 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/31666 ,  H01L21/3245 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/201 ,  H01L29/205

Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.

Abstract translation: 一种处理化合物半导体衬底的方法，其中在无定形天然氧化物中清洁含In III-As，III-Sb或III-P衬底的表面的真空条件下的方法，然后将清洁的衬底加热至 温度为约250-550℃，并通过将氧气引入到基底的表面上而被氧化。 本发明还涉及化合物半导体衬底，以及衬底在诸如MOSFET的晶体管的结构中的用途。