Invention Grant
- Patent Title: Monolithically-pumped erbium-doped waveguide amplifiers and lasers
- Patent Title (中): 单片泵浦铒掺杂波导放大器和激光器
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Application No.: US12123257Application Date: 2008-05-19
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Publication No.: US07655489B2Publication Date: 2010-02-02
- Inventor: Douglas Hall , Mingjun Huang
- Applicant: Douglas Hall , Mingjun Huang
- Applicant Address: US IN Notre Dame
- Assignee: The University of Notre Dame Du Lac
- Current Assignee: The University of Notre Dame Du Lac
- Current Assignee Address: US IN Notre Dame
- Agency: Ladas & Parry LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3115 ; H01L21/316
Abstract:
Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
Public/Granted literature
- US20080285610A1 MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS Public/Granted day:2008-11-20
Information query
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