公开(公告)号：US12100879B2

公开(公告)日：2024-09-24

申请号：US17339289

申请日：2021-06-04

Applicant: Regents of the University of Minnesota

Inventor： Bethanie Joyce Hills Stadler ,  Joseph Um ,  Yali Zhang ,  Rhonda Franklin ,  Rashaunda Henderson

IPC: H01P3/00 ,  C25D11/04 ,  C25D11/18 ,  C25D11/20 ,  C25D11/24 ,  H01L23/66 ,  H01P11/00

CPC classification number: H01P3/003 ,  C25D11/045 ,  C25D11/18 ,  C25D11/20 ,  C25D11/24 ,  H01L23/66 ,  H01P11/001 ,  H01L2223/6627

Abstract: A method for forming anodic aluminum oxide (AAO) on a substrate includes disposing an Al layer on the substrate, there being a Cu layer between the substrate and the Al layer, and a TiW alloy layer between and in contact with the Cu layer and the Al layer, anodizing the Al layer to provide an AAO layer comprising nanopores extending into the AAO layer to a barrier layer of the AAO at a base of each nanopore and converting at least some of the TiW alloy layer to TiW oxide, over-anodizing the barrier layer to remove at least a portion of the AAO of the barrier layer at the base of each nanopore, and exposing the AAO layer, the TiW oxide, and the TiW to a chemical etchant sufficient to extend the nanopores through the AAO layer to a surface of the Cu layer.

公开(公告)号：US12054838B2

公开(公告)日：2024-08-06

申请号：US17075154

申请日：2020-10-20

Applicant: Murata Manufacturing Co., Ltd. ,  COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Frédéric Voiron ,  Julien El Sabahy ,  Maxime Lemenager ,  Guy Parat

IPC: C25D11/02 ,  C25D11/04 ,  C25D11/06 ,  C25D11/08 ,  C25D11/18 ,  C25D11/24 ,  C25D11/26 ,  H01L23/522 ,  H01L23/532 ,  H01L49/02

CPC classification number: C25D11/022 ,  C25D11/045 ,  C25D11/06 ,  C25D11/18 ,  H01L23/5223 ,  H01L23/53223 ,  H01L28/75

Abstract: A semiconductor device that includes a porous anodic region for embedding a structure. The porous anodic region is defined by a ductile hard mask. The ductility of the hard mask reduces the potential for the hard mask to crack during the formation by anodization of the porous anodic region. The ductile hard mask may be a metal. The metal may be selected to form a stable oxide when exposed to the anodization electrolyte thereby enabling the hard mask to self-repair if a crack occurs during the anodization process.

公开(公告)号：US20240052516A1

公开(公告)日：2024-02-15

申请号：US18496161

申请日：2023-10-27

Applicant: POINT ENGINEERING CO., LTD.

Inventor： Bum Mo AHN

IPC: C25D11/12 ,  C25D11/04 ,  C23C16/44

CPC classification number: C25D11/12 ,  C25D11/045 ,  C23C16/4404

Abstract: Proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber. More particularly, proposed are a metal part for a process chamber and a method of forming a thin film layer of the metal part for the process chamber, wherein the metal part is installed in a process chamber used in a display or semiconductor manufacturing process or constitutes a part of the process chamber, and a large thickness of the thin film layer of the metal part for the process chamber is easily secured, thereby achieving an extended lifespan by preventing cracks of the metal part for the process chamber, while preventing outgassing due to pores.

公开(公告)号：US20170342550A1

公开(公告)日：2017-11-30

申请号：US15603161

申请日：2017-05-23

Applicant: National Technology & Engineering Solutions of Sandia, LLC

Inventor： Michael P. Siegal ,  Caitlin Rochford Friedman ,  William G. Yelton

IPC: C23C16/26 ,  C23C16/44 ,  C25D3/12 ,  C25D5/48 ,  H01L23/373 ,  C25D11/04 ,  C25D5/02 ,  B82Y40/00 ,  B82Y30/00 ,  H01J1/304

CPC classification number: C23C16/26 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/176 ,  C23C16/0281 ,  C23C16/44 ,  C23C16/56 ,  C25D3/12 ,  C25D5/022 ,  C25D5/48 ,  C25D11/04 ,  C25D11/045 ,  C25D11/20 ,  C25D11/24 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/3738 ,  H01L23/42 ,  H01L2224/29193 ,  H01L2924/10253 ,  Y10S977/742 ,  Y10S977/833 ,  Y10S977/843

Abstract: Template-guided growth of carbon nanotubes using anodized aluminum oxide nanopore templates provides vertically aligned, untangled planarized arrays of multiwall carbon nanotubes with Ohmic back contacts. Growth by catalytic chemical vapor deposition results in multiwall carbon nanotubes with uniform diameters and crystalline quality, but varying lengths. The nanotube lengths can be trimmed to uniform heights above the template surface using ultrasonic cutting, for example. The carbon nanotube site density can be controlled by controlling the catalyst site density. Control of the carbon nanotube site density enables various applications. For example, the highest possible site density is preferred for thermal interface materials, whereas, for field emission, significantly lower site densities are preferable.

公开(公告)号：US09751755B2

公开(公告)日：2017-09-05

申请号：US13825029

申请日：2010-10-21

Applicant: Peter Mardilovich ,  Anthony M. Fuller ,  Qingqiao Wei

Inventor： Peter Mardilovich ,  Anthony M. Fuller ,  Qingqiao Wei

IPC: C25D11/26 ,  B81C1/00 ,  C25D1/00 ,  C25D11/18 ,  B81B3/00 ,  C25D11/02 ,  C25D11/04 ,  C25D11/08 ,  C25D11/10

CPC classification number: B81C1/00373 ,  B81B3/00 ,  B81C1/00031 ,  C25D1/006 ,  C25D11/022 ,  C25D11/045 ,  C25D11/08 ,  C25D11/10 ,  C25D11/18 ,  C25D11/26 ,  Y10S977/856 ,  Y10S977/888 ,  Y10T428/24355

Abstract: A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars.

公开(公告)号：US09601747B2

公开(公告)日：2017-03-21

申请号：US13803582

申请日：2013-03-14

Applicant: The University of Tulsa

Inventor： Dale Teeters ,  Matthew Smith

IPC: H01M6/42 ,  H01M4/04 ,  C23C14/34 ,  C25F3/16 ,  C25D11/02 ,  C25D11/04 ,  C25D11/08 ,  C25D11/16 ,  C25D11/24 ,  H01M4/139 ,  H01M4/70 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/054 ,  H01M10/04

CPC classification number: H01M4/0404 ,  C23C14/34 ,  C25D11/024 ,  C25D11/045 ,  C25D11/08 ,  C25D11/16 ,  C25D11/24 ,  C25F3/16 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/0547 ,  H01M4/0426 ,  H01M4/139 ,  H01M4/70 ,  H01M2010/0495 ,  Y02E10/52 ,  Y02E60/122 ,  Y10T29/49115

Abstract: A process of forming and the resulting nano-pitted metal substrate that serves both as patterns to grow nanostructured materials and as current collectors for the resulting nanostructured material is disclosed herein. The nano-pitted substrate can be fabricated from any suitable conductive material that allows nanostructured electrodes to be grown directly on the substrate.

公开(公告)号：US09512535B2

公开(公告)日：2016-12-06

申请号：US14008649

申请日：2012-03-29

Applicant: Akinobu Isurugi ,  Kiyoshi Minoura ,  Hiroyuki Sugawara

Inventor： Akinobu Isurugi ,  Kiyoshi Minoura ,  Hiroyuki Sugawara

IPC: C25D11/12 ,  C25D11/18 ,  B29C33/38 ,  B29C33/42 ,  C25D1/10 ,  C25D11/04 ,  C25D11/24 ,  G02B1/118 ,  B29C59/04 ,  B29C35/08

CPC classification number: C25D11/12 ,  B29C33/38 ,  B29C33/42 ,  B29C59/046 ,  B29C2035/0827 ,  C25D1/10 ,  C25D11/04 ,  C25D11/045 ,  C25D11/24 ,  G02B1/118

Abstract: A method for manufacturing a moth-eye mold of an embodiment of the present invention employs a mold base including a metal base, an organic insulating layer provided on the metal base, and an aluminum alloy layer provided on the organic insulating layer, the aluminum alloy layer containing aluminum and a non-aluminum metal element M, an absolute value of a difference between a standard electrode potential of the metal element M and a standard electrode potential of aluminum being not more than 0.64 V, and a content of the metal element M in the aluminum alloy layer not exceeding 10 mass %.

Abstract translation: 本发明的一个实施方式的蛾眼用模具的制造方法采用如下的模具基体：金属基体，设置在金属基体上的有机绝缘层和设置在有机绝缘层上的铝合金层，铝合金 含有铝和非铝金属元素M的层，金属元素M的标准电极电位与铝的标准电极电位之差的绝对值不大于0.64V，金属元素M的含量 在铝合金层中不超过10质量％。

公开(公告)号：US09366785B2

公开(公告)日：2016-06-14

申请号：US13504180

申请日：2010-10-27

Applicant: Kiyoshi Minoura ,  Akinobu Isurugi

Inventor： Kiyoshi Minoura ,  Akinobu Isurugi

IPC: C25D11/04 ,  B29C33/42 ,  G02B1/11 ,  G02B1/118 ,  B29C33/38 ,  B29C33/56 ,  C25D11/24 ,  C25D11/12

CPC classification number: G02B1/118 ,  B29C33/3814 ,  B29C33/424 ,  B29C33/56 ,  C25D11/045 ,  C25D11/12 ,  C25D11/24

Abstract: A moth-eye mold fabrication method includes: (a) providing an aluminum film deposited on a base, the aluminum film having a thickness of not less than 0.5 μm and not more than 5 μm, a surface of the aluminum film having a plurality of crystal grains whose average crystal grain diameter is not less than 200 nm and not more than 5 μm; (b) after step (a), anodizing the surface of the aluminum film to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), bringing the porous alumina layer into contact with an etching solution, thereby enlarging the plurality of minute recessed portions of the porous alumina layer. A method of readily fabricating a mold is produced that is for manufacture of an antireflection film in which a moth-eye structure is superposed over an antiglare structure.

Abstract translation: 蛾眼模具制造方法包括：（a）提供沉积在基底上的铝膜，所述铝膜的厚度不小于0.5μm且不大于5μm，所述铝膜的表面具有多个 平均晶粒直径不小于200nm且不大于5μm的晶粒; （b）在步骤（a）之后，对铝膜的表面进行阳极氧化以形成具有多个微小凹陷部分的多孔氧化铝层; 和（c）在步骤（b）之后，使多孔氧化铝层与蚀刻溶液接触，从而扩大多孔氧化铝层的多个微小凹陷部分。 制造容易制造模具的方法，其用于制造其中蛾眼结构叠加在防眩光结构上的抗反射膜。

公开(公告)号：US09269851B2

公开(公告)日：2016-02-23

申请号：US14357165

申请日：2012-11-12

Applicant: NewSouth Innovations Pty Limited

Inventor： Valantis Vais ,  Alison Joan Lennon ,  Stuart Ross Wenham ,  Jing Jia Ji ,  Alison Maree Wenham

IPC: H01L31/0224 ,  H01L31/18 ,  H01L21/225 ,  H01L21/268 ,  C25D17/00 ,  C25D11/04 ,  C25D17/10 ,  C25D17/14 ,  C25D7/12

CPC classification number: H01L31/02167 ,  C25D7/126 ,  C25D11/045 ,  C25D17/008 ,  C25D17/10 ,  C25D17/14 ,  H01L21/02258 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/268 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method of depositing metal on an exposed surface of a p-type semiconductor region of a semiconductor device comprising a p-n junction is disclosed, the method comprising: immersing the exposed surface of the p-type semiconductor region on which the metal is to be deposited in a solution of metal ions; producing an electric field in the semiconductor device such that the p-n junction is forward biased; electrochemically depositing the metal on the exposed surface of the p-type semiconductor region of the semiconductor device by reduction of metal ions in the solution.

Abstract translation: 公开了一种在包括pn结的半导体器件的p型半导体区域的暴露表面上沉积金属的方法，所述方法包括：浸渍要沉积金属的p型半导体区域的暴露表面 在金属离子溶液中; 在半导体器件中产生电场，使得p-n结正向偏置; 通过还原溶液中的金属离子将金属电化学沉积在半导体器件的p型半导体区域的暴露表面上。

公开(公告)号：US20160032475A1

公开(公告)日：2016-02-04

申请号：US14814362

申请日：2015-07-30

Applicant: IMEC VZW ,  King Abdulaziz City for Science and Technology

Inventor： Cedric Huyghebaert ,  Alaa Abd-Elnaiem ,  Philippe Vereecken

IPC: C25D1/00 ,  H01B5/00 ,  C25D11/04 ,  H01B1/02

CPC classification number: C25D1/006 ,  B82Y10/00 ,  B82Y40/00 ,  C25D1/20 ,  C25D3/12 ,  C25D11/005 ,  C25D11/045 ,  C25D11/24 ,  H01B1/023 ,  H01B5/002 ,  H01L29/0676 ,  H01L29/1029 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/66469 ,  H01M4/131 ,  H01M4/661 ,  H01M4/70 ,  H01M10/052 ,  H01M2004/028

Abstract: A cluster of non-collapsed nanowires, a template to produce the same, methods to obtain the template and to obtain the cluster by using the template, and devices comprising the cluster are described. The cluster and the template both have an interconnected region and an interconnection-free region.

Abstract translation: 描述了一组未折叠的纳米线，产生相同的模板，获取模板并通过使用模板获取集群的方法以及包含该集群的设备。 集群和模板都具有互连区域和互连区域。