Method of forming a nano-structure
    1.
    发明授权
    Method of forming a nano-structure 有权
    形成纳米结构的方法

    公开(公告)号:US09410260B2

    公开(公告)日:2016-08-09

    申请号:US13822062

    申请日:2010-10-21

    摘要: A method of forming a nano-structure involves forming a multi-layered structure including an oxidizable material layer established on a substrate, and another oxidizable material layer established on the oxidizable material layer. The oxidizable material layer is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer forms a porous anodic structure, and anodizing the oxidizable material layer forms a dense oxidized layer and nano-pillars which grow through the porous anodic structure into pores thereof. The porous structure is selectively removed to expose the nano-pillars. A surface (I) between the dense oxidized layer and a remaining portion of the oxidizable material layer is anodized to consume a substantially cone-shaped portion of the nano-pillars to form cylindrical nano-pillars.

    摘要翻译: 形成纳米结构的方法包括形成包括建立在基板上的可氧化材料层的多层结构和在可氧化材料层上建立的另一可氧化材料层。 可氧化材料层是在氧化期间具有膨胀系数的可氧化材料,其大于1.阳极氧化其它可氧化材料层形成多孔阳极结构,阳极氧化可氧化材料层形成致密氧化层和纳米柱 通过多孔阳极结构生长成孔。 选择性地去除多孔结构以暴露纳米柱。 氧化层和氧化物层的剩余部分之间的表面(I)被阳极氧化以消耗纳米柱的大致锥形部分以形成圆柱形纳米柱。

    METHOD OF FORMING A NANO-STRUCTURE
    4.
    发明申请
    METHOD OF FORMING A NANO-STRUCTURE 有权
    形成纳米结构的方法

    公开(公告)号:US20130175177A1

    公开(公告)日:2013-07-11

    申请号:US13822062

    申请日:2010-10-21

    IPC分类号: C25D5/02

    摘要: A method of forming a nano-structure (100′) involves forming a multi-layered structure (10) including an oxidizable material layer (14) established on a substrate (12), and another oxidizable material layer (16) established on the oxidizable material layer (14). The oxidizable material layer (14) is an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. Anodizing the other oxidizable material layer (16) forms a porous anodic structure (16′), and anodizing the oxidizable material layer (14) forms a dense oxidized layer (14′) and nano-pillars (20) which grow through the porous anodic structure (16′) into pores (18) thereof. The porous structure (16′) is selectively removed to expose the nano-pillars (20). A surface (I) between the dense oxidized layer (14′) and a remaining portion of the oxidizable material layer (14) is anodized to consume a substantially cone-shaped portion (32) of the nano-pillars (20) to form cylindrical nano-pillars (20′).

    摘要翻译: 形成纳米结构(100')的方法包括形成包括建立在基板(12)上的可氧化材料层(14)的多层结构(10),以及建立在可氧化的材料层(16)上的另一可氧化材料层 材料层(14)。 可氧化材料层(14)是在氧化期间具有大于1的膨胀系数的可氧化材料。阳极氧化其它可氧化材料层(16)形成多孔阳极结构(16'),并阳极氧化可氧化材料层 (14)形成致密氧化层(14')和通过多孔阳极结构(16')生长成其孔隙(18)的纳米柱(20)。 选择性地去除多孔结构(16')以暴露纳米柱(20)。 密集氧化层(14')和可氧化材料层(14)的剩余部分之间的表面(I)被阳极氧化以消耗纳米柱(20)的大致锥形部分(32),以形成圆柱形 纳米柱(20')。

    DEPOSITING NANO-DOTS ON A SUBSTRATE
    8.
    发明申请
    DEPOSITING NANO-DOTS ON A SUBSTRATE 审中-公开
    在基底上沉积纳米角

    公开(公告)号:US20140174941A1

    公开(公告)日:2014-06-26

    申请号:US14236967

    申请日:2011-08-30

    IPC分类号: C25D5/02

    摘要: A method of depositing nano-dots on a substrate includes forming a template on the base, the template defining nano-pores, at least partially filling the nano-pores with a pillar material to define nano-pillars, depositing a dot material on the nano-pillars to define nano-dots on the nano-pillars, and contact printing the substrate with the array of nano-dots.

    摘要翻译: 在衬底上沉积纳米点的方法包括在基底上形成模板,模板限定纳米孔,至少部分地用柱状材料填充纳米孔以限定纳米柱,在纳米孔上沉积点状材料 - 用于在纳米柱上限定纳米点,并且用纳米点阵列接触印刷衬底。