公开(公告)号：US12022643B2

公开(公告)日：2024-06-25

申请号：US17036418

申请日：2020-09-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Yu Hsu ,  Jian-Hao Chen ,  Chia-Wei Chen ,  Shan-Mei Liao ,  Hui-Chi Chen ,  Yu-Chia Liang ,  Shih-Hao Lin ,  Kuei-Lun Lin ,  Kuo-Feng Yu ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC分类号： H01L27/11 ,  H10B10/00

CPC分类号： H10B10/12

摘要： A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

公开(公告)号：US20220246433A1

公开(公告)日：2022-08-04

申请号：US17162270

申请日：2021-01-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Kuei-Lun Lin ,  Chia-Wei Hsu ,  Xiong-Fei Yu ,  Chi On Chui ,  Chih-Yu Hsu ,  Jian-Hao Chen

IPC分类号： H01L21/28 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/3205 ,  H01L21/285 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092

摘要： In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

公开(公告)号：US20220384454A1

公开(公告)日：2022-12-01

申请号：US17884442

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Yu Hsu ,  Jian-Hao Chen ,  Chia-Wei Chen ,  Shan-Mei Liao ,  Hui-Chi Chen ,  Yu-Chia Liang ,  Shih-Hao Lin ,  Kuei-Lun Lin ,  Kuo-Feng Yu ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC分类号： H01L27/11

摘要： A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

公开(公告)号：US20220359296A1

公开(公告)日：2022-11-10

申请号：US17870343

申请日：2022-07-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Ching Lee ,  Hsin-Han Tsai ,  Shih-Hang Chiu ,  Tsung-Ta Tang ,  Chung-Chiang Wu ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Da-Yuan Lee ,  Jian-Hao Chen ,  Chien-Hao Chen ,  Kuo-Feng Yu ,  Chia-Wei Chen ,  Chih-Yu Hsu

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/40 ,  H01L29/66

摘要： A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

公开(公告)号：US20210305258A1

公开(公告)日：2021-09-30

申请号：US17036418

申请日：2020-09-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Yu Hsu ,  Jian-Hao Chen ,  Chia-Wei Chen ,  Shan-Mei Liao ,  Hui-Chi Chen ,  Yu-Chia Liang ,  Shih-Hao Lin ,  Kuei-Lun Lin ,  Kuo-Feng Yu ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC分类号： H01L27/11

摘要： A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

公开(公告)号：US20230386926A1

公开(公告)日：2023-11-30

申请号：US18363945

申请日：2023-08-02

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Ching Lee ,  Hsin-Han Tsai ,  Shih-Hang Chiu ,  Tsung-Ta Tang ,  Chung-Chiang Wu ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Da-Yuan Lee ,  Jian-Hao Chen ,  Chien-Hao Chen ,  Kuo-Feng Yu ,  Chia-Wei Chen ,  Chih-Yu Hsu

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/40 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L21/82345 ,  H01L27/0886 ,  H01L29/401 ,  H01L29/66545 ,  H01L29/4966

摘要： A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

公开(公告)号：US11437280B2

公开(公告)日：2022-09-06

申请号：US16900439

申请日：2020-06-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Ching Lee ,  Hsin-Han Tsai ,  Shih-Hang Chiu ,  Tsung-Ta Tang ,  Chung-Chiang Wu ,  Hung-Chin Chung ,  Hsien-Ming Lee ,  Da-Yuan Lee ,  Jian-Hao Chen ,  Chien-Hao Chen ,  Kuo-Feng Yu ,  Chia-Wei Chen ,  Chih-Yu Hsu

IPC分类号： H01L21/8234 ,  H01L27/088 ,  H01L29/40 ,  H01L29/66

摘要： A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

公开(公告)号：US20240313119A1

公开(公告)日：2024-09-19

申请号：US18673746

申请日：2024-05-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Shih-Hao Lin ,  Chih-Hsuan Chen ,  Chia-Hao Pao ,  Chih-Chuan Yang ,  Chih-Yu Hsu ,  Hsin-Wen Su ,  Chia-Wei Chen

IPC分类号： H01L29/786 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/167 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/78621 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/167 ,  H01L29/66553 ,  H01L29/66742 ,  H01L29/78696 ,  H01L29/0665 ,  H01L29/456

摘要： A semiconductor structure includes a first pair of source/drain features (S/D), a first stack of channel layers connected to the first pair of S/D, a second pair of S/D, and a second stack of channel layers connected to the second pair of S/D. The first pair of S/D each include a first epitaxial layer having a first dopant, a second epitaxial layer having a second dopant and disposed over the first epitaxial layer and connected to the first stack of channel layers, and a third epitaxial layer having a third dopant and disposed over the second epitaxial layer. The second pair of S/D each include a fourth epitaxial layer having a fourth dopant and connected to the second stack of channel layers, and a fifth epitaxial layer having a fifth dopant and disposed over the fourth epitaxial layer. The first dopant through the fourth dopant are of different species.

公开(公告)号：US12041760B2

公开(公告)日：2024-07-16

申请号：US17884442

申请日：2022-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Yu Hsu ,  Jian-Hao Chen ,  Chia-Wei Chen ,  Shan-Mei Liao ,  Hui-Chi Chen ,  Yu-Chia Liang ,  Shih-Hao Lin ,  Kuei-Lun Lin ,  Kuo-Feng Yu ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC分类号： H01L27/11 ,  H10B10/00

CPC分类号： H10B10/12

摘要： A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

公开(公告)号：US20230389256A1

公开(公告)日：2023-11-30

申请号：US18446593

申请日：2023-08-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Yu Hsu ,  Jian-Hao Chen ,  Chia-Wei Chen ,  Shan-Mei Liao ,  Hui-Chi Chen ,  Yu-Chia Liang ,  Shih-Hao Lin ,  Kuei-Lun Lin ,  Kuo-Feng Yu ,  Feng-Cheng Yang ,  Yen-Ming Chen

IPC分类号： H10B10/00

CPC分类号： H10B10/12

摘要： A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.