知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.042 seconds)

    Vertical TFT with tunnel barrier
    1.
    发明授权
    Vertical TFT with tunnel barrier 有权
    带隧道屏障的垂直TFT

    公开(公告)号：US09230985B1

    公开(公告)日：2016-01-05

    申请号：US14515054

    申请日：2014-10-15

    Applicant: SanDisk 3D LLC

    Inventor： Ming-Che Wu ,  Peter Rabkin ,  Tim Chen

    IPC: H01L21/336 ,  H01L27/115 ,  H01L29/786 ,  H01L29/08 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L27/11582 ,  H01L29/0895 ,  H01L29/66742 ,  H01L29/78618 ,  H01L29/78642

    Abstract: A vertically oriented thin film transistor (TFT) having a tunnel barrier is disclosed. The tunnel barrier may be formed from a dielectric such as silicon oxide or hafnium oxide. The vertically oriented TFT selection device with tunnel barrier may serve as a selection device in a 3D memory array. The vertically oriented TFT may be used to connect/disconnect a global bit line to/from a vertical bit line in a 3D memory array. The vertically oriented TFT may be used to connect/disconnect a source line to/from a channel of a vertical NAND string in a 3D memory array. A vertical TFT with tunnel barrier has a high breakdown voltage, low leakage current, and high on current. The tunnel barrier can be at the top junction or bottom junction of the TFT.

    Abstract translation: 公开了一种具有隧道势垒的垂直取向薄膜晶体管（TFT）。 隧道势垒可以由诸如氧化硅或氧化铪的电介质形成。 具有隧道势垒的垂直取向的TFT选择装置可以用作3D存储器阵列中的选择装置。 可以使用垂直取向的TFT来连接/断开与3D存储器阵列中的垂直位线的全局位线。 垂直取向的TFT可以用于将源极线连接到/离开3D存储器阵列中的垂直NAND串的通道。 具有隧道势垒的垂直TFT具有高击穿电压，低漏电流和高导通电流。 隧道势垒可以在TFT的顶部结或底部结。

    Non-volatile storage with metal oxide switching element and methods for fabricating the same
    2.
    发明授权
    Non-volatile storage with metal oxide switching element and methods for fabricating the same 有权
    具有金属氧化物开关元件的非易失性存储器及其制造方法

    公开(公告)号：US09034689B2

    公开(公告)日：2015-05-19

    申请号：US13848603

    申请日：2013-03-21

    Applicant: SanDisk 3D LLC

    Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Peter Rabkin ,  Chu-Chen Fu

    IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/24

    CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

    Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

    VERTICAL BIT LINE TFT DECODER FOR HIGH VOLTAGE OPERATION
    3.
    发明申请
    VERTICAL BIT LINE TFT DECODER FOR HIGH VOLTAGE OPERATION 有权
    用于高电压操作的垂直位线TFT解码器

    公开(公告)号：US20140252454A1

    公开(公告)日：2014-09-11

    申请号：US13788990

    申请日：2013-03-07

    Applicant: SANDISK 3D LLC

    Inventor： Peter Rabkin ,  Masaaki Higashitani

    IPC: H01L27/105

    CPC classification number: H01L27/1052 ,  G11C13/0002 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/71 ,  H01L27/11551 ,  H01L27/11578 ,  H01L27/2454 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

    Abstract: A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a channel extension, otherwise referred to as a gate/junction offset, is disclosed. The vertically oriented TFT selection device with channel extension serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device having a channel extension has a high breakdown voltage and low leakage current. The channel extension can be at the top junction or bottom junction of the TFT. Depending on whether the memory elements undergo a forward FORM or reverse FORM, either the bottom or top junction can have the channel extension. This provides for a high voltage junction where needed.

    Abstract translation: 公开了一种具有垂直取向的薄膜晶体管（TFT）选择装置的3D存储器阵列，其具有通道延伸，否则称为栅极/结偏移。 具有通道扩展的垂直取向的TFT选择装置用作3D存储器阵列中的垂直位线选择装置。 具有通道延伸的垂直TFT选择装置具有高击穿电压和低漏电流。 沟道延伸可以在TFT的顶部结或底部结。 取决于存储器元件是经历正向FORM还是反向FORM，底部或顶部结可以具有通道扩展。 这在需要时提供了高压接点。

    Trap passivation in memory cell with metal oxide switching element
    6.
    发明授权
    Trap passivation in memory cell with metal oxide switching element 有权
    在金属氧化物开关元件的存储单元中陷阱钝化

    公开(公告)号：US08987046B2

    公开(公告)日：2015-03-24

    申请号：US13837917

    申请日：2013-03-15

    Applicant: SanDisk 3D LLC

    Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer S. Makala ,  Peter Rabkin

    IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/24

    CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

    Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

    NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME
    7.
    发明申请
    NON-VOLATILE STORAGE WITH METAL OXIDE SWITCHING ELEMENT AND METHODS FOR FABRICATING THE SAME 有权
    具有金属氧化物切换元件的非挥发性储存及其制造方法

    公开(公告)号：US20130234099A1

    公开(公告)日：2013-09-12

    申请号：US13848603

    申请日：2013-03-21

    Applicant: SANDISK 3D LLC

    Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer S. Makala ,  Peter Rabkin ,  Chu-Chen Fu ,  Tong Zhang

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

    Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

    MIIIM DIODE HAVING LANTHANUM OXIDE
    8.
    发明申请
    MIIIM DIODE HAVING LANTHANUM OXIDE 审中-公开
    具有氧化铝的MIIIM二极管

    公开(公告)号：US20130181181A1

    公开(公告)日：2013-07-18

    申请号：US13787505

    申请日：2013-03-06

    Applicant: SanDisk 3D LLC

    Inventor： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Xiying Chen Costa

    IPC: H01L45/00

    CPC classification number: H01L45/145 ,  H01L27/2418 ,  H01L45/00 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/149

    Abstract: A MIIIM diode and method of fabricating are disclosed. In one aspect, the MIIIM diode comprises a first metal electrode, a first region comprising a first insulator material having an interface with the first metal electrode, a second region comprising a second insulator material having an interface with the first insulator material, a third region comprising a third insulator material having an interface with the second insulator material, and a second metal electrode having an interface with the third insulator material. At least one of the first, second, or third insulator materials is lanthanum oxide.

    Abstract translation: 公开了一种MIIIM二极管及其制造方法。 一方面，MIIIM二极管包括第一金属电极，第一区域，包括与第一金属电极具有界面的第一绝缘体材料，第二区域包括与第一绝缘体材料具有界面的第二绝缘体材料，第三区域 包括具有与第二绝缘体材料的界面的第三绝缘体材料和与第三绝缘体材料具有界面的第二金属电极。 第一，第二或第三绝缘体材料中的至少一种是氧化镧。

    TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT
    10.
    发明申请
    TRAP PASSIVATION IN MEMORY CELL WITH METAL OXIDE SWITCHING ELEMENT 有权
    具有金属氧化物开关元件的存储器中的陷阱钝化

    公开(公告)号：US20130221311A1

    公开(公告)日：2013-08-29

    申请号：US13837917

    申请日：2013-03-15

    Applicant: SANDISK 3D LLC

    Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer S. Makala ,  Peter Rabkin

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

    Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

Patent Agency Ranking