公开(公告)号：US20130234099A1

公开(公告)日：2013-09-12

申请号：US13848603

申请日：2013-03-21

Applicant: SANDISK 3D LLC

Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Raghuveer S. Makala ,  Peter Rabkin ,  Chu-Chen Fu ,  Tong Zhang

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

公开(公告)号：US09054308B1

公开(公告)日：2015-06-09

申请号：US14196647

申请日：2014-03-04

Applicant: SanDisk 3D LLC

Inventor： Tong Zhang ,  Timothy James Minvielle ,  Chu-Chen Fu ,  Wipul Jayasekara

IPC: H01L21/00 ,  H01L21/16 ,  H01L47/00 ,  H01L45/00

CPC classification number: H01L45/1641 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616

Abstract: A fabrication process for a resistance-switching memory cell uses metal oxide as a resistance-switching material. A metal oxide film having an initial stoichiometry is deposited on an electrode using atomic layer deposition. A changed stoichiometry is provided for a portion of the metal oxide film using a plasma reduction process, separate from the atomic layer deposition, and another electrode is formed adjacent to the changed stoichiometry portion. The film deposition and the plasma reduction can be performed in separate chambers where conditions such as temperature are optimized. The metal oxide film may be deposited on a vertical sidewall in a vertical bit line 3d memory device. Optionally, the mean free path of hydrogen ions during the plasma reduction process is adjusted to increase the uniformity of the vertical metal oxide film. The adjustment can involve factors such as RF power, pressure and a bias of the wafer.

Abstract translation: 电阻切换存储单元的制造工艺使用金属氧化物作为电阻切换材料。 使用原子层沉积将具有初始化学计量的金属氧化物膜沉积在电极上。 使用与原子层沉积分离的等离子体还原法，对于金属氧化物膜的一部分提供了改变的化学计量，并且与改变的化学计量部分相邻地形成另一电极。 膜沉积和等离子体还原可以在诸如温度等条件优化的分离室中进行。 金属氧化物膜可以沉积在垂直位线3d存储器件中的垂直侧壁上。 可选地，调整等离子体还原过程期间氢离子的平均自由程，以增加垂直金属氧化物膜的均匀性。 该调整可以涉及诸如RF功率，压力和晶片偏置的因素。

公开(公告)号：US09034689B2

公开(公告)日：2015-05-19

申请号：US13848603

申请日：2013-03-21

Applicant: SanDisk 3D LLC

Inventor： Deepak C. Sekar ,  Franz Kreupl ,  Peter Rabkin ,  Chu-Chen Fu

IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/102 ,  H01L27/24

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C2213/35 ,  G11C2213/71 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1641 ,  H01L45/1675

Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element. The titanium might be implanted into the metal oxide while depositing the metal oxide, or after deposition of the metal oxide.

Abstract translation: 本文公开了具有可逆电阻率开关元件的非易失性存储元件及其制造技术。 可逆电阻率开关元件可以通过在顶部电极上沉​​积防氧扩散材料（例如，重掺杂的Si，W，WN）来形成。 可以将陷阱钝化材料（例如，氟，氮，氢，氘）并入到可逆电阻率切换元件的底部电极，金属氧化物区域或顶部电极中的一个或多个中。 一个实施例包括在金属氧化物和顶部​​电极之间具有双层覆盖层的可逆电阻率开关元件。 制造该器件可以包括沉积（未反应的）钛并原位沉积二氧化钛而没有空气破裂。 一个实施例包括将钛结合到可逆电阻率开关元件的金属氧化物中。 可以在沉积金属氧化物的同时或在沉积金属氧化物之后将钛注入金属氧化物中。

公开(公告)号：US20140252298A1

公开(公告)日：2014-09-11

申请号：US13792100

申请日：2013-03-10

Applicant: SANDISK 3D LLC

Inventor： Yubao Li ,  Chu-Chen Fu ,  Timothy James Minvielle ,  Huiwen Xu

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1675

Abstract: In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.

Abstract translation: 在一些方面，提供一种存储单元，其包括第一导电层，位于第一导电层上方的可逆电阻开关元件，可逆电阻开关元件上方的第二导电层以及围绕可逆电阻开关侧壁设置的衬垫 元件。 可逆电阻切换元件包括第一金属氧化物材料，并且衬垫包括第一金属氧化物材料。 提供了许多其他方面。