公开(公告)号：US09054308B1

公开(公告)日：2015-06-09

申请号：US14196647

申请日：2014-03-04

Applicant: SanDisk 3D LLC

Inventor： Tong Zhang ,  Timothy James Minvielle ,  Chu-Chen Fu ,  Wipul Jayasekara

IPC: H01L21/00 ,  H01L21/16 ,  H01L47/00 ,  H01L45/00

CPC classification number: H01L45/1641 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1616

Abstract: A fabrication process for a resistance-switching memory cell uses metal oxide as a resistance-switching material. A metal oxide film having an initial stoichiometry is deposited on an electrode using atomic layer deposition. A changed stoichiometry is provided for a portion of the metal oxide film using a plasma reduction process, separate from the atomic layer deposition, and another electrode is formed adjacent to the changed stoichiometry portion. The film deposition and the plasma reduction can be performed in separate chambers where conditions such as temperature are optimized. The metal oxide film may be deposited on a vertical sidewall in a vertical bit line 3d memory device. Optionally, the mean free path of hydrogen ions during the plasma reduction process is adjusted to increase the uniformity of the vertical metal oxide film. The adjustment can involve factors such as RF power, pressure and a bias of the wafer.

Abstract translation: 电阻切换存储单元的制造工艺使用金属氧化物作为电阻切换材料。 使用原子层沉积将具有初始化学计量的金属氧化物膜沉积在电极上。 使用与原子层沉积分离的等离子体还原法，对于金属氧化物膜的一部分提供了改变的化学计量，并且与改变的化学计量部分相邻地形成另一电极。 膜沉积和等离子体还原可以在诸如温度等条件优化的分离室中进行。 金属氧化物膜可以沉积在垂直位线3d存储器件中的垂直侧壁上。 可选地，调整等离子体还原过程期间氢离子的平均自由程，以增加垂直金属氧化物膜的均匀性。 该调整可以涉及诸如RF功率，压力和晶片偏置的因素。

公开(公告)号：US20140252298A1

公开(公告)日：2014-09-11

申请号：US13792100

申请日：2013-03-10

Applicant: SANDISK 3D LLC

Inventor： Yubao Li ,  Chu-Chen Fu ,  Timothy James Minvielle ,  Huiwen Xu

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1675

Abstract: In some aspects, a memory cell is provided that includes a first conducting layer, a reversible resistance switching element above the first conducting layer, a second conducting layer above the reversible resistance switching element, and a liner disposed about a sidewall of the reversible resistance switching element. The reversible resistance switching element includes a first metal oxide material, and the liner includes the first metal oxide material. Numerous other aspects are provided.

Abstract translation: 在一些方面，提供一种存储单元，其包括第一导电层，位于第一导电层上方的可逆电阻开关元件，可逆电阻开关元件上方的第二导电层以及围绕可逆电阻开关侧壁设置的衬垫 元件。 可逆电阻切换元件包括第一金属氧化物材料，并且衬垫包括第一金属氧化物材料。 提供了许多其他方面。