公开(公告)号：US20130181181A1

公开(公告)日：2013-07-18

申请号：US13787505

申请日：2013-03-06

Applicant: SanDisk 3D LLC

Inventor： Deepak C. Sekar ,  Tanmay Kumar ,  Peter Rabkin ,  Xiying Chen Costa

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2418 ,  H01L45/00 ,  H01L45/04 ,  H01L45/06 ,  H01L45/144 ,  H01L45/149

Abstract: A MIIIM diode and method of fabricating are disclosed. In one aspect, the MIIIM diode comprises a first metal electrode, a first region comprising a first insulator material having an interface with the first metal electrode, a second region comprising a second insulator material having an interface with the first insulator material, a third region comprising a third insulator material having an interface with the second insulator material, and a second metal electrode having an interface with the third insulator material. At least one of the first, second, or third insulator materials is lanthanum oxide.

Abstract translation: 公开了一种MIIIM二极管及其制造方法。 一方面，MIIIM二极管包括第一金属电极，第一区域，包括与第一金属电极具有界面的第一绝缘体材料，第二区域包括与第一绝缘体材料具有界面的第二绝缘体材料，第三区域 包括具有与第二绝缘体材料的界面的第三绝缘体材料和与第三绝缘体材料具有界面的第二金属电极。 第一，第二或第三绝缘体材料中的至少一种是氧化镧。