公开(公告)号：US09236435B2

公开(公告)日：2016-01-12

申请号：US14563155

申请日：2014-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Xin-Gui Zhang ,  Tae-Yong Kwon ,  Sang-Su Kim

IPC: H01L29/78 ,  H01L29/205 ,  H01L29/165 ,  H01L29/73 ,  H01L29/737 ,  H01L29/739

CPC classification number: H01L29/205 ,  H01L29/165 ,  H01L29/7311 ,  H01L29/737 ,  H01L29/7376 ,  H01L29/7391 ,  H01L29/7848

Abstract: Tunneling field effect transistors are provided. The tunneling field effect transistor includes a source region, a drain region, and a channel region disposed between the source region and the drain region. The channel region includes a first region adjacent to the source region and a second region adjacent to the drain region. A first energy band gap of the first region is lower than a second energy band gap of the second region, and the first region has a direct energy band gap.

Abstract translation: 提供隧道场效应晶体管。 隧道场效应晶体管包括源极区，漏极区和设置在源极区和漏极区之间的沟道区。 沟道区域包括与源极区域相邻的第一区域和与漏极区域相邻的第二区域。 第一区域的第一能带隙低于第二区域的第二能带隙，并且第一区域具有直接能带隙。

公开(公告)号：US09893186B2

公开(公告)日：2018-02-13

申请号：US15224313

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

IPC: H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/165 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L27/092

CPC classification number: H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

公开(公告)号：US10411129B2

公开(公告)日：2019-09-10

申请号：US15877563

申请日：2018-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

IPC: H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/165 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

公开(公告)号：US20170018645A1

公开(公告)日：2017-01-19

申请号：US15224313

申请日：2016-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

Abstract: Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

Abstract translation: 形成半导体器件的方法可以包括形成在衬底上沿第一方向延伸的鳍式有源图案，鳍型有源图案包括在衬底上的下图案和下图案上的上图案。 场绝缘层形成在衬底上，翅片型有源图案的侧壁和远离衬底的部分上部图案远离场绝缘层的顶表面。 形成与翅片型有源图案相交并且沿与第一方向不同的第二方向延伸的伪栅极图案。 所述方法包括在伪栅极图案的侧壁上形成虚拟栅极间隔物，在虚拟栅极图案的两侧上形成鳍状有源图案中的凹槽，并在虚拟栅极图案的两侧形成源区和漏极区。

公开(公告)号：US09394262B2

公开(公告)日：2016-07-19

申请号：US13973985

申请日：2013-08-22

Applicant: Samsung Electronics Co., Ltd. ,  Gachon University of Industry-Academic Cooperation Foundation

Inventor： Tae-Yong Kwon ,  Woo-Jae Kim ,  Hyung-Sam Kim

IPC: C07D249/04 ,  C01B31/02 ,  B82Y10/00

CPC classification number: C07D249/04 ,  C01B32/172

Abstract: Provided is a method of separating carbon nanotubes, the method comprising: forming first carbon nanotubes having a first functional group, forming a substrate having a second functional group, and causing the first carbon nanotubes to adhere to the substrate by a click chemistry reaction between the first functional group and the second functional group.

Abstract translation: 提供一种分离碳纳米管的方法，该方法包括：形成具有第一官能团的第一碳纳米管，形成具有第二官能团的基材，并且使第一碳纳米管通过第二官能团之间的点击化学反应 第一官能团和第二官能团。