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公开(公告)号：US11527296B2
公开(公告)日：2022-12-13
申请号：US17232370
申请日：2021-04-16
发明人： Doo-Yeun Jung , Young-Jin Cho , Bu-Il Nam , Nari Lee , Yeji Nam , Sangyong Yoon
摘要： An operation method of a nonvolatile memory device which includes a memory block having wordlines includes performing an erase on the memory block, performing a block verification on the memory block by using a 0-th erase verification voltage, performing a delta verification on the memory block by using a first erase verification voltage different from the 0-th erase verification voltage when a result of the block verification indicates a pass, and outputting information about an erase result of the memory block based on the result of the block verification or a result of the delta verification. The delta verification includes generating delta counting values respectively corresponding to wordline groups by using the first erase verification voltage, generating a delta value based on the delta counting values, and comparing the delta value and a first reference value.
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公开(公告)号：US09032272B2
公开(公告)日：2015-05-12
申请号：US13690544
申请日：2012-11-30
发明人： Sangyong Yoon , Kitae Park , Jinman Han
CPC分类号： G06F11/1068 , G06F11/1008 , G06F11/1072 , G11C29/52
摘要： Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using, for example, an address-scrambled reprogramming technique.
摘要翻译： 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 然后使用例如地址加扰的重新编程技术，用非易失性存储器件中的M位非易失性存储单元的第二个“目标”部分用ECC处理数据的M页编程。
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公开(公告)号：US20150248328A1
公开(公告)日：2015-09-03
申请号：US14695375
申请日：2015-04-24
发明人： Sangyong Yoon , Kitae Park , Jinman Han
CPC分类号： G06F11/1068 , G06F11/1008 , G06F11/1072 , G11C29/52
摘要： Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example.
摘要翻译： 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 例如，非易失性存储器件中的M位非易失性存储单元的第二“目标”部分然后使用地址加扰的重新编程技术用ECC处理数据的M页被编程。
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公开(公告)号：US09875793B2
公开(公告)日：2018-01-23
申请号：US15176964
申请日：2016-06-08
发明人： Kyungryun Kim , Sangyong Yoon
CPC分类号： G11C11/5628 , G06F12/0246 , G06F12/10 , G06F2212/7201 , G11C11/5642 , G11C16/10 , G11C16/16 , G11C16/30
摘要： A program method of a storage device which includes at least one nonvolatile memory device and a memory controller to control the at least one nonvolatile memory device, the program method comprising: performing a first normal program operation to store first user data in a memory block; detecting, at the memory controller, a first event; performing a dummy program operation to store dummy data in at least one page of the memory block in response to the detection of the first event; and performing a second normal program operation to store second user data in the memory block after the dummy program operation, dummy program operations being operations in which random data is programmed into the memory block, normal program operations being operations in which data other than random data is programmed in the memory block.
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公开(公告)号：US09741441B2
公开(公告)日：2017-08-22
申请号：US15232909
申请日：2016-08-10
发明人： Kyungryun Kim , Sangyong Yoon , Kiwhan Song
IPC分类号： G11C16/06 , G11C16/28 , G11C16/34 , G11C16/10 , G11C7/22 , G11C11/56 , G11C16/04 , G11C16/32 , G06F3/06 , G11C16/30
CPC分类号： G11C16/28 , G06F3/0604 , G06F3/0629 , G06F3/0679 , G11C7/227 , G11C11/5628 , G11C11/5635 , G11C16/0483 , G11C16/10 , G11C16/30 , G11C16/32 , G11C16/3459 , G11C2211/5621
摘要： A nonvolatile memory system includes a nonvolatile memory device including a plurality of memory cells, and a memory controller. The memory controller is configured to count a clock to generate a current time, program dummy data at predetermined memory cells among the plurality of memory cells at a power-off state, detect a charge loss of the predetermined memory cells when a power-on state occurs after the power-off state, and restore the current time based on the detected charge loss.
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6.发明授权Nonvolatile memory system and programming method including a reprogram operation using a page buffer to reduce data load operations 有权非易失性存储器系统和编程方法包括使用页缓冲器的重新编程操作以减少数据加载操作公开(公告)号：US09466390B2
公开(公告)日：2016-10-11
申请号：US14299505
申请日：2014-06-09
发明人： Sihwan Kim , Sangyong Yoon , Kyungryun Kim
CPC分类号： G11C16/3404 , G11C16/0483 , G11C16/10
摘要： A program method for a nonvolatile memory system including a reprogram operation that does not require a reload of first program data to page buffers of a constituent nonvolatile memory device between execution of a first coarse program step and execution of a first fine program step being performed after the execution of an intervening second coarse program step.
摘要翻译： 一种非易失性存储器系统的程序方法，包括：在执行第一粗略程序步骤和执行第一精细程序步骤之后执行第一程序数据的第一程序数据不需要重新加载组成非易失性存储器件的页面缓冲器的再编程操作， 执行中间的第二粗程序步骤。
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公开(公告)号：US09280420B2
公开(公告)日：2016-03-08
申请号：US14695375
申请日：2015-04-24
发明人： Sangyong Yoon , Kitae Park , Jinman Han
CPC分类号： G06F11/1068 , G06F11/1008 , G06F11/1072 , G11C29/52
摘要： Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example.
摘要翻译： 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 例如，非易失性存储器件中的M位非易失性存储单元的第二“目标”部分然后使用地址加扰的重新编程技术用ECC处理数据的M页被编程。
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8.发明授权Nonvolatile memory devices and methods of programming nonvolatile memory devices 有权非易失性存储器件和非易失性存储器件编程方法公开(公告)号：US09064582B2
公开(公告)日：2015-06-23
申请号：US14316023
申请日：2014-06-26
发明人： Youngsun Song , Bogeun Kim , Ohsuk Kwon , Kitae Park , Seung-Hwan Shin , Sangyong Yoon
CPC分类号： G11C16/10 , G11C11/5621 , G11C11/5628 , G11C11/5642 , G11C16/08 , G11C16/34 , G11C16/3459
摘要： A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.
摘要翻译： 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累积和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。
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9.发明申请DATA STORAGE SYSTEM HAVING MULTI-BIT MEMORY DEVICE AND OPERATING METHOD THEREOF 有权具有多位存储器件的数据存储系统及其操作方法公开(公告)号：US20140313824A1
公开(公告)日：2014-10-23
申请号：US14319137
申请日：2014-06-30
发明人： Sangyong Yoon , Kitae Park , Jinman Han , Wonseok Lee
CPC分类号： G11C16/10 , G11C11/56 , G11C11/5628 , G11C14/0018 , G11C16/0483 , G11C16/26 , G11C2211/5641 , G11C2211/5642 , G11C2211/5643
摘要： A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory. The operating method of the data storage device includes storing data in the buffer memory, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the program pattern.
摘要翻译： 数据存储装置包括：非易失性存储装置，其包括存储单元阵列; 以及包括缓冲存储器的存储器控制器。 数据存储装置的操作方法包括将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是伴随存储器单元阵列的缓冲器程序操作的数据。 当存储在缓冲存储器中的数据是伴随缓冲器程序操作的数据时，该方法还包括确定是否需要对存储单元阵列执行主程序操作，并且当需要存储单元阵列的主程序操作时， 存储单元阵列中的主程序操作的程序模式。 该方法还包括基于该程序模式向存储单元阵列发出用于主程序操作的一组命令到多位存储器件。
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公开(公告)号：US20130145234A1
公开(公告)日：2013-06-06
申请号：US13690544
申请日：2012-11-30
发明人： Sangyong Yoon , Kitae Park , Jinman Han
IPC分类号： G06F11/10
CPC分类号： G06F11/1068 , G06F11/1008 , G06F11/1072 , G11C29/52
摘要： Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example.
摘要翻译： 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 例如，非易失性存储器件中的M位非易失性存储单元的第二“目标”部分然后使用地址加扰的重新编程技术用ECC处理数据的M页被编程。
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