公开(公告)号：USRE49963E1

公开(公告)日：2024-05-07

申请号：US17155615

申请日：2021-01-22

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H10B10/00 ,  H01L27/12 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/535 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66545 ,  H01L29/66636 ,  H10B10/12 ,  H10B10/18 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/165

摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10784376B2

公开(公告)日：2020-09-22

申请号：US16450193

申请日：2019-06-24

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66 ,  H01L27/12 ,  H01L21/84 ,  H01L29/165

摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US20190319127A1

公开(公告)日：2019-10-17

申请号：US16450193

申请日：2019-06-24

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC分类号： H01L29/78 ,  H01L27/11 ,  H01L29/16 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/66 ,  H01L23/535

摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10411131B2

公开(公告)日：2019-09-10

申请号：US16111854

申请日：2018-08-24

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC分类号： H01L29/78 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L27/11 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US10090413B2

公开(公告)日：2018-10-02

申请号：US15288080

申请日：2016-10-07

申请人： Samsung Electronics Co., Ltd.

发明人： Ki Hwan Kim ,  Gigwan Park ,  Junggun You ,  DongSuk Shin ,  Jin-Wook Kim

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L23/535 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66

摘要： A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.

公开(公告)号：US09812332B2

公开(公告)日：2017-11-07

申请号：US15398776

申请日：2017-01-05

申请人： Samsung Electronics Co., Ltd.

发明人： Hyun-Kwan Yu ,  Woonki Shin ,  Moonhan Park ,  DongSuk Shin ,  HanJin Lim

IPC分类号： H01L21/461 ,  H01L21/306 ,  H01L21/02 ,  H01L21/8234

CPC分类号： H01L21/30604 ,  H01L21/02057 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/823418 ,  H01L21/823437 ,  H01L21/823468 ,  H01L21/823481

摘要： An etching method is disclosed. The etching method comprises providing on a substrate a structure comprising a recess region formed therein. The recess region includes an inner part and a mouth part whose width is less than that of the inner part. The etching method further comprises performing a clean-then-etch process to remove at least a portion of etching object formed outside the recess region. The performing a clean-then-etch process comprises performing a cleaning process to fill at least a portion of the recess region with a cleaning solution, and performing a wet etch process to the substrate in a state that the cleaning solution remains in the recess region.