公开(公告)号：US10771244B2

公开(公告)日：2020-09-08

申请号：US15747184

申请日：2016-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-il Kim ,  Dong-chan Kim ,  Mi-suk Huh

IPC: H04L29/06 ,  H04W12/02 ,  H04W4/70 ,  H04W4/80 ,  H04L9/14 ,  H04L9/08 ,  H04W12/04 ,  H04W12/06 ,  H04W12/00

Abstract: Disclosed is a method of performing, by a first device, short-range wireless communication with a second device, the method including receiving, from the second device, second authentication information encrypted using first authentication information of the first device, decrypting the encrypted second authentication information by using the first authentication information, determining a secret key based on the decrypted second authentication information, and performing communication between the first device and the second device by using the determined secret key.

公开(公告)号：US20180204621A1

公开(公告)日：2018-07-19

申请号：US15919155

申请日：2018-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Kim ,  Dong-chan Kim ,  Ji-sang Lee

IPC: G11C16/14 ,  G11C16/34 ,  G11C16/10 ,  G11C16/04 ,  G11C11/56

CPC classification number: G11C16/14 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/107 ,  G11C16/349

Abstract: A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells.

公开(公告)号：US09607853B2

公开(公告)日：2017-03-28

申请号：US14656235

申请日：2015-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-yub Jeon ,  Dong-chan Kim ,  Gyung-jin Min ,  Jae-hong Park ,  Je-woo Han

IPC: H01L21/302 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/02107 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76898

Abstract: A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.

公开(公告)号：US10224109B2

公开(公告)日：2019-03-05

申请号：US15919155

申请日：2018-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Kim ,  Dong-chan Kim ,  Ji-sang Lee

IPC: G11C11/56 ,  G11C16/14 ,  G11C16/34 ,  G11C16/10 ,  G11C16/04

Abstract: A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells.

公开(公告)号：US09449973B2

公开(公告)日：2016-09-20

申请号：US14263119

申请日：2014-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-jin Lim ,  Kong-soo Lee ,  Seok-woo Nam ,  Dong-chan Kim ,  Soo-jin Hong

IPC: G11C7/10 ,  H01L27/092 ,  H01L27/06 ,  G11C11/4091 ,  G11C7/06 ,  H01L27/11

CPC classification number: H01L27/092 ,  G11C7/065 ,  G11C11/4091 ,  H01L27/0688 ,  H01L27/1108

Abstract: A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary bit line; a semiconductor layer disposed on the first inverter; and first and third switch devices disposed on the semiconductor layer and adjusting a threshold voltage of the first inverter to a voltage level of any one of the bit line and the complementary bit line.

Abstract translation: 半导体器件包括衬底; 第一反相器，设置在所述基板上并接收来自位线和互补位线中的任何一个的电压; 设置在所述第一反相器上的半导体层; 以及设置在半导体层上的第一和第三开关器件，并且将第一反相器的阈值电压调整到位线和互补位线中的任一个的电压电平。

公开(公告)号：US09395430B2

公开(公告)日：2016-07-19

申请号：US14487514

申请日：2014-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-wook Park ,  Jae-moon Jo ,  Dong-chan Kim ,  Ye-ji Han

IPC: G06K9/52 ,  G01R33/561 ,  A61B5/055 ,  G01R33/56 ,  G01R33/565

CPC classification number: G01R33/5611 ,  A61B5/055 ,  G01R33/5608 ,  G01R33/56536

Abstract: Disclosed are a magnetic resonance (MR) image generating method and apparatus that perform imaging on an MR image by using a radio frequency (RF) multi-coil which includes a plurality of channel coils. The MR image generating method includes generating a plurality of pieces of K-space completion data which respectively correspond to the plurality of channel coils and converting the plurality of pieces of K-space completion data to a frequency domain in order to generate a plurality of pieces of image data, combining the plurality of pieces of image data in order to acquire an MR image, and acquiring phase information which relates to the MR image based on the plurality of pieces of image data and the plurality of pieces of K-space completion data.

Abstract translation: 公开了一种使用包括多个通道线圈的射频（RF）多线圈对MR图像进行成像的磁共振（MR）图像产生方法和装置。 MR图像生成方法包括生成分别对应于多个通道线圈的多个K空间完成数据，并将多个K空间完成数据转换为频域，以便生成多个片段 的图像数据，组合多个图像数据以获取MR图像，并且基于多个图像数据和多个K空间完成数据获取与MR图像相关的相位信息 。

公开(公告)号：US08629052B2

公开(公告)日：2014-01-14

申请号：US13652550

申请日：2012-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-ju Park ,  Jae-ho Min ,  Myeong-cheol Kim ,  Dong-chan Kim ,  Jae-hwang Sim

IPC: H01L21/28 ,  H01L21/311

CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L23/522 ,  H01L27/0207 ,  H01L27/11519 ,  H01L27/11531 ,  H01L27/11548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction.

Abstract translation: 提供形成半导体器件的半导体器件和方法，其中同时形成多个图案以具有不同的宽度，并且使用双重图案化来增加一些区域的图案密度。 半导体器件包括多个导线，每条导线包括第一线部分和第二线部分，其中第一线部分在第一方向上在衬底上延伸，第二线部分从第一线部分的一端延伸到 第二方向，第一方向与第二方向不同; 多个接触焊盘，每个接触焊盘经由相应的导线的第二线部分与多条导线的相应导线连接; 以及多个虚设导电线，每个虚设导电线包括从所述多个接触焊盘的相应的接触焊盘延伸的第一虚设部分，与所述第二方向上的对应的第二线部分平行。

公开(公告)号：US10254365B2

公开(公告)日：2019-04-09

申请号：US14965959

申请日：2015-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-wook Park ,  Dong-chan Kim ,  Chang-heun Oh ,  Hyun-seok Seo

IPC: G01R33/56 ,  G01R33/483 ,  G01R33/561

Abstract: A magnetic resonance imaging apparatus includes a gradient magnetic field controller which applies a spatial encoding gradient to a plurality of slices and applies a gradient magnetic field in a first direction with respect to the plurality of slices, a radio frequency (RF) receiver which receives respective magnetic resonance signals from each of the plurality of slices undersampled in a second direction different from the first direction, and an image processor which generates a respective magnetic resonance image of each of the plurality of slices based on the magnetic resonance signals received from the plurality of slices.

公开(公告)号：US09831186B2

公开(公告)日：2017-11-28

申请号：US14736455

申请日：2015-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-hyun Park ,  Byoung-ho Kwon ,  Dong-chan Kim ,  Choong-seob Shin ,  Jong-su Kim ,  Bo-un Yoon

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/4757 ,  H01L21/768

CPC classification number: H01L23/544 ,  H01L21/47573 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7684 ,  H01L22/12 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a first alignment mark trench in a first material layer on a substrate. A first alignment mark via may then be formed by etching a second material layer that is underneath the first material layer, where the first alignment mark via is positioned to communicate with the first alignment mark trench. Then, a trench-via-merged-type first alignment mark may be formed by filling the first alignment mark trench and the first alignment mark via with a light reflection material layer.

公开(公告)号：US09230808B2

公开(公告)日：2016-01-05

申请号：US13957572

申请日：2013-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-woo Han ,  Jun-ho Yoon ,  Dong-chan Kim ,  Gyung-jin Min ,  Jae-hong Park ,  Yong-moon Jang

IPC: H01L21/76 ,  H01L21/00 ,  H01L23/544 ,  H01L21/027 ,  G03F7/20 ,  H01L49/02 ,  H01L27/108

CPC classification number: H01L21/027 ,  G03F7/70633 ,  H01L23/544 ,  H01L27/10894 ,  H01L28/40 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.

Abstract translation: 制造半导体器件的方法包括提供被分成形成有图案层的第一区域和其上形成有光密钥的第二区域的衬底。 在衬底的第一区域和第二区域上形成硅层。 图案化硅层以形成露出其上形成有光钥匙的第二区域的光键部分的孔。 形成掩埋氧化物层以填充曝光照相键部分的孔。 通过使用形成在掩埋氧化物层下面的光密钥来形成硅层以形成硅图案层。