公开(公告)号：US10012900B2

公开(公告)日：2018-07-03

申请号：US15218284

申请日：2016-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-su Kim ,  Shuichi Tamamushi ,  In-kyun Shin ,  Sung-il Lee ,  Jin Choi

IPC: G03B27/32 ,  G03B27/52 ,  G06F17/50 ,  G21K5/00 ,  G03F1/70 ,  G03F7/20 ,  G03F1/78

CPC classification number: G03F1/70 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70616 ,  G03F7/70875

Abstract: A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.

公开(公告)号：US09831186B2

公开(公告)日：2017-11-28

申请号：US14736455

申请日：2015-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-hyun Park ,  Byoung-ho Kwon ,  Dong-chan Kim ,  Choong-seob Shin ,  Jong-su Kim ,  Bo-un Yoon

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/4757 ,  H01L21/768

CPC classification number: H01L23/544 ,  H01L21/47573 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/7684 ,  H01L22/12 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes forming a first alignment mark trench in a first material layer on a substrate. A first alignment mark via may then be formed by etching a second material layer that is underneath the first material layer, where the first alignment mark via is positioned to communicate with the first alignment mark trench. Then, a trench-via-merged-type first alignment mark may be formed by filling the first alignment mark trench and the first alignment mark via with a light reflection material layer.