公开(公告)号：US10461192B2

公开(公告)日：2019-10-29

申请号：US14842540

申请日：2015-09-01

Applicant: Samsung Display Co., Ltd.

Inventor： Je-Hun Lee ,  Eun-Hyun Kim ,  Sang-Won Shin ,  Eun-Young Lee

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/443 ,  H01L29/423

Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

公开(公告)号：US20150318312A1

公开(公告)日：2015-11-05

申请号：US14799060

申请日：2015-07-14

Applicant: Samsung Display Co.,Ltd

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US09443877B2

公开(公告)日：2016-09-13

申请号：US14799060

申请日：2015-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L21/4757 ,  H01L21/441 ,  H01L21/475 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US09184181B2

公开(公告)日：2015-11-10

申请号：US14454822

申请日：2014-08-08

Applicant: Samsung Display Co., LTD.

Inventor： Je-Hun Lee ,  Sung-Hoon Yang ,  Hiroshi Okumura ,  Jin-Ho Hwang

IPC: H01L21/00 ,  H01L21/84 ,  H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Abstract translation: 显示基板包括在基底基板上的栅极电极，与栅电极重叠并且包括金属氧化物半导体的有源图案，有源图案上的绝缘图案，与有源图案接触的源极电极， 并且与源电极间隔开，以及覆盖有源图案和绝缘图案并包括氟的第一钝化层，其中有源图案包括直接接触绝缘图案并与栅电极重叠的第一部分，以及 所述绝缘图案是接触所述第一钝化层并具有比所述第一部分的导电性大的电导率的第二部分，与所述第一钝化层接触的第三部分具有比所述第一部分的电导率大的电导率， 与第二部分间隔开。

公开(公告)号：US09831350B2

公开(公告)日：2017-11-28

申请号：US14886214

申请日：2015-10-19

Applicant: Samsung Display CO., Ltd.

Inventor： Yeon-Keon Moon ,  Je-Hun Lee

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/40 ,  H01L29/417 ,  H01L29/66 ,  H01L21/467 ,  H01L21/475 ,  H01L21/47 ,  H01L21/3213 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/32139 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/401 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78642

Abstract: Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

公开(公告)号：US09484363B2

公开(公告)日：2016-11-01

申请号：US14622440

申请日：2015-02-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Je-Hun Lee ,  Do-Hyun Kim

IPC: G02F1/13 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417

CPC classification number: H01L27/1225 ,  G02F1/136286 ,  G02F1/1368 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/7869

Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

公开(公告)号：US09123597B2

公开(公告)日：2015-09-01

申请号：US14319012

申请日：2014-06-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Je-Hun Lee ,  Ki-Won Kim ,  Do-Hyun Kim ,  Woo-Geun Lee ,  Kap-Soo Yoon

IPC: H01L51/40 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L27/1225 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L23/53238 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract translation: TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在 半导体氧化物层和栅电极。 栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

公开(公告)号：US09111805B2

公开(公告)日：2015-08-18

申请号：US14230787

申请日：2014-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US08703549B2

公开(公告)日：2014-04-22

申请号：US13775777

申请日：2013-02-25

Applicant: Samsung Display Co., Ltd.

Inventor： Je-Hun Lee ,  Do-Hyun Kim ,  Tae-Hyung Ihn

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

Abstract translation: 在衬底上形成氧化物或氮化物半导体层。 包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。 第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。 第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

公开(公告)号：US20140098311A1

公开(公告)日：2014-04-10

申请号：US13734300

申请日：2013-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Hun Lim ,  Byung-Du Ahn ,  Je-Hun Lee

IPC: G02F1/1362 ,  G02F1/1333

CPC classification number: G02F1/136209 ,  G02F1/1333 ,  G02F2201/58 ,  G09G3/3648 ,  G09G2360/144

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract translation: 显示基板包括基板，开关元件，像素电极和感光部。 开关元件设置在基板上并且电连接到栅极线和数据线。 像素电极电连接到开关元件。 光检测部电连接到开关元件和像素电极，并且被配置为根据外部光的亮度来控制像素的灰度。 像素包括像素电极。