公开(公告)号：US20140098311A1

公开(公告)日：2014-04-10

申请号：US13734300

申请日：2013-01-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Hun Lim ,  Byung-Du Ahn ,  Je-Hun Lee

IPC: G02F1/1362 ,  G02F1/1333

CPC classification number: G02F1/136209 ,  G02F1/1333 ,  G02F2201/58 ,  G09G3/3648 ,  G09G2360/144

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract translation: 显示基板包括基板，开关元件，像素电极和感光部。 开关元件设置在基板上并且电连接到栅极线和数据线。 像素电极电连接到开关元件。 光检测部电连接到开关元件和像素电极，并且被配置为根据外部光的亮度来控制像素的灰度。 像素包括像素电极。

公开(公告)号：US09091894B2

公开(公告)日：2015-07-28

申请号：US13734300

申请日：2013-01-04

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hun Lim ,  Byung-Du Ahn ,  Je-Hun Lee

IPC: G02F1/133 ,  G02F1/1362 ,  G02F1/1333 ,  G09G3/36

CPC classification number: G02F1/136209 ,  G02F1/1333 ,  G02F2201/58 ,  G09G3/3648 ,  G09G2360/144

Abstract: A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Abstract translation: 显示基板包括基板，开关元件，像素电极和感光部。 开关元件设置在基板上并且电连接到栅极线和数据线。 像素电极电连接到开关元件。 光检测部电连接到开关元件和像素电极，并且被配置为根据外部光的亮度来控制像素的灰度。 像素包括像素电极。

公开(公告)号：US09685122B2

公开(公告)日：2017-06-20

申请号：US14548124

申请日：2014-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Hun Lim ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Byung-Du Ahn ,  Hyang-Shik Kong

IPC: G09G3/36 ,  G09G3/02 ,  H01L27/144 ,  H01L27/12 ,  H01L29/786 ,  G06F3/041 ,  G06F3/042

CPC classification number: G09G3/3607 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/02 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2360/141 ,  G09G2360/142 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1446 ,  H01L29/7869

Abstract: A pixel circuit and a display device having the pixel circuit are disclosed. One inventive aspect includes a switching thin-film TFT and a light sensing TFT. The switching thin-film TFT includes a first source electrode electrically connected to a data line. A first gate electrode of the switching thin-film TFT and a second source electrode of the light sensing TFT are electrically connected to a first gate line. A first drain electrode of the switching thin-film TFT and a second drain electrode of the light sensing TFT are electrically connected to a pixel electrode.

公开(公告)号：US09660089B2

公开(公告)日：2017-05-23

申请号：US14467848

申请日：2014-08-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byung-Du Ahn ,  Ji-Hun Lim ,  Jin-Hyun Park ,  Hyun-Jae Kim

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78633 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.

公开(公告)号：US09502246B2

公开(公告)日：2016-11-22

申请号：US14455805

申请日：2014-08-08

Applicant: Samsung Display Co., Ltd. ,  University-Industry Foundation (UIF), Yonsei University

Inventor： Yeon-Hong Kim ,  Byung-Du Ahn ,  Hyeon-Sik Kim ,  Yeon-Gon Mo ,  Ji-Hun Lim ,  Hyun-Jae Kim

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L2227/323

Abstract: A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that faces away from the first major surface may be provided. An oxide semiconductor device may be formed over the first major surface to provide an intermediate device, and the semiconductor device may comprise an oxide active layer. The intermediate device may be subjected to ultraviolet (UV) light (e.g., ultraviolet ray irradiation process) for a first period, and subjected to heat (e.g., thermal treatment process) for a second period. The first and second periods may at least partly overlap.

Abstract translation: 可以提供形成氧化物半导体器件的方法。 在该方法中，可以提供包括第一主表面和远离第一主表面的第二主表面的基板。 可以在第一主表面上形成氧化物半导体器件以提供中间器件，并且半导体器件可以包括氧化物有源层。 中间装置可以经受第一阶段的紫外线（UV）光（例如紫外线照射处理），并进行第二时段的加热（例如热处理）。 第一和第二周期可以至少部分重叠。