- Patent Title: Thin film transistor substrate and method of manufacturing the same
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Application No.: US14467848Application Date: 2014-08-25
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Publication No.: US09660089B2Publication Date: 2017-05-23
- Inventor: Byung-Du Ahn , Ji-Hun Lim , Jin-Hyun Park , Hyun-Jae Kim
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD
- Current Assignee: SAMSUNG DISPLAY CO., LTD
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2013-0108343 20130910
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12

Abstract:
A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.
Public/Granted literature
- US20150069382A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-12
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