公开(公告)号：US20150318312A1

公开(公告)日：2015-11-05

申请号：US14799060

申请日：2015-07-14

Applicant: Samsung Display Co.,Ltd

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US08969131B2

公开(公告)日：2015-03-03

申请号：US14094001

申请日：2013-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Young Ryu ,  Jin-Won Lee ,  Woo-Geun Lee ,  Hee-Jun Byeon ,  Xun Zhu

IPC: G02F1/136 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3272 ,  H01L51/5253 ,  H01L2227/323

Abstract: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

Abstract translation: 薄膜晶体管面板包括基板，基板上的阻光层，遮光层上的第一保护膜，第一保护膜上的第一电极和第二电极，第一保护膜的一部分上的氧化物半导体层 在第一电极和第二电极之间暴露的保护膜，绝缘层，与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。 遮光层包括第一侧壁，并且第一保护膜包括第二侧壁。 第一和第二侧壁沿着基本相同的线设置。

公开(公告)号：US09443877B2

公开(公告)日：2016-09-13

申请号：US14799060

申请日：2015-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L21/4757 ,  H01L21/441 ,  H01L21/475 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US09111805B2

公开(公告)日：2015-08-18

申请号：US14230787

申请日：2014-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract translation: 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US09520412B2

公开(公告)日：2016-12-13

申请号：US14798123

申请日：2015-07-13

Applicant: Samsung Display Co., Ltd.

Inventor： Pil-Sang Yun ,  Ki-Won Kim ,  Hye-Young Ryu ,  Woo-Geun Lee ,  Seung-Ha Choi ,  Jae-Hyoung Youn ,  Kyoung-Jae Chung ,  Young-Wook Lee ,  Je-Hun Lee ,  Kap-Soo Yoon ,  Do-Hyun Kim ,  Dong-Ju Yang ,  Young-Joo Choi

IPC: H01L21/00 ,  H01L21/84 ,  H01L27/12 ,  H01L21/4757 ,  H01L21/441 ,  H01L21/475 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

公开(公告)号：US20140093998A1

公开(公告)日：2014-04-03

申请号：US14094001

申请日：2013-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Hye-Young Ryu ,  Jin-Won Lee ,  Woo-Geun Lee ,  Hee-Jun Byeon ,  Xun Zhu

IPC: H01L27/12

CPC classification number: H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3272 ,  H01L51/5253 ,  H01L2227/323

Abstract: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

Abstract translation: 薄膜晶体管面板包括基板，基板上的阻光层，遮光层上的第一保护膜，第一保护膜上的第一电极和第二电极，第一保护膜的一部分上的氧化物半导体层 在第一电极和第二电极之间暴露的保护膜，绝缘层，与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。 遮光层包括第一侧壁，并且第一保护膜包括第二侧壁。 第一和第二侧壁沿着基本相同的线设置。