公开(公告)号：US20240219787A1

公开(公告)日：2024-07-04

申请号：US18609063

申请日：2024-03-19

申请人： Japan Display Inc.

发明人： Gen KOIDE

IPC分类号： G02F1/1362 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

CPC分类号： G02F1/136227 ,  G02F1/133512 ,  G02F1/134363 ,  G02F1/13606 ,  G02F1/13629 ,  G02F1/134318 ,  G02F1/134336 ,  G02F1/13685

摘要： According to one embodiment, a semiconductor substrate including, a switching element, a first organic insulating film, first and second metal lines arranged in a first direction and extending in a second direction, and a metal electrode located between the first and second metal lines. The first organic insulating film includes first and second surfaces. The switching element is covered with the first surface. The first and second metal lines and the metal electrode are located on the second surface side. The first metal line includes a first portion extending in the second direction and a second portion having a width larger than a width of the first portion. The second portion includes arcuate first and second edge. The metal electrode has a polygonal shape having n corners or an elliptic shape where n is larger than four.

公开(公告)号：US20240184025A1

公开(公告)日：2024-06-06

申请号：US18437296

申请日：2024-02-09

申请人： CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

发明人： Fengli JI ,  Chang LUO ,  Jianpeng WU ,  Lujiang HUANGFU

IPC分类号： G02B5/20 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/302 ,  G09F9/33 ,  H10K59/35

CPC分类号： G02B5/201 ,  G02F1/134309 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/302 ,  G09F9/3023 ,  G09F9/33 ,  H10K59/353 ,  G02F1/134345

摘要： A display substrate and a display device are provided. The display substrate includes a plurality of repeat units. Each of the plurality of repeat units includes one first-color sub-pixel, one second-color sub-pixel pair and one third-color sub-pixel which are arranged in a first direction, the second-color sub-pixel pair includes two second-color sub-pixels arranging in a second direction. Connecting lines of centers of orthographic projections of light-emitting regions of four second-color sub-pixels on the base substrate form a first trapezoid, and at least one edge of the first trapezoid is located outside orthographic projections of light-emitting regions of respective sub-pixels on the base substrate.

公开(公告)号：US12001109B2

公开(公告)日：2024-06-04

申请号：US18314995

申请日：2023-05-10

申请人： InnoLux Corporation

发明人： Chung-Wen Yen ,  Yu-Tsung Liu ,  Chao-Hsiang Wang ,  Te-Yu Lee

IPC分类号： G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/136

CPC分类号： G02F1/1368 ,  G02F1/136286 ,  H01L27/1222 ,  H01L27/124 ,  G02F1/133345 ,  G02F1/13606

摘要： The electronic device includes a substrate; an active layer disposed above the first substrate; a first signal line disposed above the substrate; and a conductive pattern. The conductive pattern is in electrical contact with the active layer, wherein the conductive pattern includes a first side extending in a first direction, a second side extending in the first direction, and a third side connected between the first side and the second side, and wherein the third side includes a part that the part is not parallel to the first direction and not perpendicular to the first direction, and the part is located out of the first signal line.

公开(公告)号：US11966130B2

公开(公告)日：2024-04-23

申请号：US18082606

申请日：2022-12-16

申请人： Japan Display Inc.

发明人： Gen Koide

IPC分类号： G02F1/1362 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

CPC分类号： G02F1/136227 ,  G02F1/133512 ,  G02F1/134363 ,  G02F1/13606 ,  G02F1/13629 ,  G02F1/134318 ,  G02F1/134336 ,  G02F1/13685

摘要： According to one embodiment, a semiconductor substrate including, a switching element, a first organic insulating film, first and second metal lines arranged in a first direction and extending in a second direction, and a metal electrode located between the first and second metal lines. The first organic insulating film includes first and second surfaces. The switching element is covered with the first surface. The first and second metal lines and the metal electrode are located on the second surface side. The first metal line includes a first portion extending in the second direction and a second portion having a width larger than a width of the first portion. The second portion includes arcuate first and second edge. The metal electrode has a polygonal shape having n corners or an elliptic shape where n is larger than four.

公开(公告)号：US11947228B2

公开(公告)日：2024-04-02

申请号：US17412495

申请日：2021-08-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Junichiro Sakata ,  Hideaki Kuwabara

IPC分类号： H01L27/12 ,  G02F1/1362 ,  H01L29/45 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/167 ,  G09G3/34 ,  G09G3/36 ,  H10K59/121

CPC分类号： G02F1/136227 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/1345 ,  G02F1/13606 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2201/123 ,  G09G3/344 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  H10K59/1213

摘要： An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

公开(公告)号：US11935897B2

公开(公告)日：2024-03-19

申请号：US18205587

申请日：2023-06-05

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Susumu Kawashima ,  Naoto Kusumoto

IPC分类号： G02F1/136 ,  G02F1/1362 ,  H01L27/12

CPC分类号： H01L27/1225 ,  G02F1/13624 ,  H01L27/124 ,  H01L27/1255

摘要： A display device capable of performing proper display without image signal conversion is provided. In the case of high-resolution display, individual data is supplied to each pixel through a first signal line and a first transistor included in each pixel. In the case of low-resolution display, the same data is supplied to a plurality of pixels through a second signal line and a second transistor electrically connected to the plurality of pixels. When the number of image signals to be displayed is more than one and the image signals support different resolutions, display can be performed without up conversion or down conversion by switching an image signal supply path as described above.

公开(公告)号：US11927862B2

公开(公告)日：2024-03-12

申请号：US18115017

申请日：2023-02-28

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshikazu Kondo ,  Jun Koyama ,  Shunpei Yamazaki

IPC分类号： G02F1/1368 ,  G02F1/1333 ,  G02F1/1362 ,  G09G3/36 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  G02F1/136

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/136286 ,  G09G3/3622 ,  H01L27/1225 ,  H01L27/1244 ,  H01L29/45 ,  H01L29/7869 ,  G02F1/13606 ,  G02F1/13624 ,  G02F1/136295 ,  G02F2202/10 ,  G09G2300/0426

摘要： An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

公开(公告)号：US11906864B2

公开(公告)日：2024-02-20

申请号：US17884708

申请日：2022-08-10

申请人： Chengdu BOE Optoelectronics Technology Co., Ltd. ,  BOE Technology Group Co., Ltd.

发明人： Pengcheng Zang ,  Weiyun Huang ,  Xiaojing Qi ,  Tingliang Liu

IPC分类号： G02F1/1362 ,  H01L27/12 ,  G02F1/136 ,  G02F1/1343 ,  G02F1/1368

CPC分类号： G02F1/136295 ,  G02F1/13606 ,  G02F1/134318 ,  G02F1/134363 ,  H01L27/124 ,  G02F1/1368 ,  G02F1/134336 ,  G02F2201/40

摘要： A dual-gate array substrate includes: a plurality of gate lines arranged in a first direction and each extended in a second direction that is perpendicular to the first direction; a plurality of primary signal lines and secondary signal lines arranged alternately in the second direction and extended in the first direction; and a plurality of pixel units. The primary signal lines are connected to a drive unit, and connected respectively to the pixel units that are adjacent thereto. Common electrodes include a plurality of main electrodes and a plurality of branching electrodes. An orthographic projection of the main electrode on the dual-gate array substrate does not overlap with those of corresponding ones, adjacent to the main electrode, of the pixel electrodes and at least covers the primary signal line. Each gate line includes a protrusion protruded in the first direction.

公开(公告)号：US11844260B2

公开(公告)日：2023-12-12

申请号：US17136663

申请日：2020-12-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Kensuke Yoshizumi

IPC分类号： H10K59/40 ,  G06F3/041 ,  H01L29/786 ,  G06F3/044 ,  H10K50/842 ,  H10K59/12 ,  H10K59/38 ,  H10K59/60 ,  H10K71/80 ,  H01L21/82 ,  H01L27/15 ,  G02F1/1333 ,  H01L21/683 ,  H01L27/12 ,  G02F1/136 ,  H10K102/00 ,  G02F1/1368

CPC分类号： H10K59/40 ,  G02F1/13338 ,  G06F3/044 ,  G06F3/0412 ,  G06F3/0445 ,  H01L21/6835 ,  H01L21/82 ,  H01L27/1218 ,  H01L27/15 ,  H01L29/7869 ,  H10K50/8426 ,  H10K59/12 ,  H10K59/38 ,  H10K59/60 ,  H10K71/80 ,  G02F1/1368 ,  G02F1/13606 ,  G02F1/133325 ,  G02F2202/28 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L2221/68363 ,  H01L2221/68386 ,  H10K2102/311 ,  H10K2102/351

摘要： The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

公开(公告)号：US11796866B2

公开(公告)日：2023-10-24

申请号：US17949396

申请日：2022-09-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hiroyuki Miyake ,  Makoto Kaneyasu

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1343 ,  G09F9/30 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/136 ,  G02F1/13357

CPC分类号： G02F1/1343 ,  G02F1/136286 ,  G09F9/30 ,  G09G3/3648 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78696 ,  G02F1/13606 ,  G02F1/133602 ,  G09G2300/0439

摘要： A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.
The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.