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公开(公告)号：US12094368B2
公开(公告)日：2024-09-17
申请号：US17346348
申请日：2021-06-14
发明人： Toshiyuki Isa , Akio Endo , Yosuke Tsukamoto , Jun Koyama
CPC分类号： G09F9/301 , G06F1/1626 , G06F1/1643 , G06F1/1652
摘要： An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided.
An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.-
公开(公告)号：US12080720B2
公开(公告)日：2024-09-03
申请号：US18207175
申请日：2023-06-08
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L27/12 , G09G3/20 , G11C19/28 , H01L29/04 , H01L29/10 , H01L29/24 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/786 , H01L29/49 , H10K59/121
CPC分类号： H01L27/1229 , G09G3/20 , G11C19/28 , H01L27/1225 , H01L27/1251 , H01L29/045 , H01L29/1033 , H01L29/24 , H01L29/247 , H01L29/41733 , H01L29/42372 , H01L29/45 , H01L29/78648 , H01L29/7869 , H01L29/78693 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , H01L27/12 , H01L27/1214 , H01L29/4908 , H01L29/78609 , H10K59/1213
摘要： An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
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公开(公告)号：US12046604B2
公开(公告)日：2024-07-23
申请号：US17204460
申请日：2021-03-17
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L27/12 , G02F1/1333 , G02F1/1362 , G02F1/1368
CPC分类号： H01L27/1259 , G02F1/133345 , G02F1/136227 , G02F1/136286 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L27/1288 , G02F1/13629 , G02F1/136295 , G02F2201/123 , H01L27/1222
摘要： A display device is manufactured with five photolithography steps: a step of forming a gate electrode, a step of forming a protective layer for reducing damage due to an etching step or the like, a step of forming a source electrode and a drain electrode, a step of forming a contact hole, and a step of forming a pixel electrode. The display device includes a groove portion which is formed in the step of forming the contact hole and separates the semiconductor layer.
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公开(公告)号：US12001241B2
公开(公告)日：2024-06-04
申请号：US18082679
申请日：2022-12-16
发明人： Shunpei Yamazaki , Jun Koyama
IPC分类号： H01L29/786 , G06F1/16 , G06F1/26 , G11C5/06
CPC分类号： G06F1/1635 , G06F1/1626 , G06F1/1637 , G06F1/263 , G11C5/063 , H01L29/786
摘要： A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.
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公开(公告)号：US11927862B2
公开(公告)日：2024-03-12
申请号：US18115017
申请日：2023-02-28
发明人： Toshikazu Kondo , Jun Koyama , Shunpei Yamazaki
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1362 , G09G3/36 , H01L27/12 , H01L29/45 , H01L29/786 , G02F1/136
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/136227 , G02F1/136286 , G09G3/3622 , H01L27/1225 , H01L27/1244 , H01L29/45 , H01L29/7869 , G02F1/13606 , G02F1/13624 , G02F1/136295 , G02F2202/10 , G09G2300/0426
摘要： An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
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公开(公告)号：US11817506B2
公开(公告)日：2023-11-14
申请号：US17367689
申请日：2021-07-06
发明人： Shunpei Yamazaki , Junichiro Sakata , Jun Koyama
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66 , H01L29/24 , H01L21/02
CPC分类号： H01L29/7869 , H01L27/124 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78696 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
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公开(公告)号：US11756966B2
公开(公告)日：2023-09-12
申请号：US17980693
申请日：2022-11-04
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/12 , G09G3/20 , H01L29/786 , G09G3/36 , G09G3/3233 , G09G3/3291 , H03K19/003 , H03K19/096 , G11C19/28 , H03K17/16 , G11C19/18
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/2092 , G09G3/3291 , G09G3/36 , G11C19/184 , G11C19/28 , H01L27/124 , H01L27/1222 , H01L27/1225 , H01L29/7869 , H03K17/161 , H03K19/00315 , H03K19/096 , G09G3/3233 , G09G3/3648 , G09G2300/0439 , G09G2300/08 , G09G2300/0842 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/08
摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.
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公开(公告)号：US11710745B2
公开(公告)日：2023-07-25
申请号：US17666938
申请日：2022-02-08
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
IPC分类号： H01L27/12 , H01L27/088 , H01L29/04 , H01L29/24 , H01L29/786 , H01L29/49 , H01L21/02
CPC分类号： H01L27/1225 , H01L27/0883 , H01L27/127 , H01L27/1251 , H01L27/1288 , H01L29/045 , H01L29/24 , H01L29/7869 , H01L29/78669 , H01L29/78678 , H01L29/78693 , H01L29/78696 , H01L21/02603 , H01L29/04 , H01L29/4908 , H01L2924/13069
摘要： An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.
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公开(公告)号：US11695080B2
公开(公告)日：2023-07-04
申请号：US17749363
申请日：2022-05-20
发明人： Shunpei Yamazaki , Jun Koyama , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga , Junpei Sugao , Hideki Uochi , Yasuo Nakamura
IPC分类号： H01L21/768 , H01L29/786 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/66 , H01L21/02 , H01L21/324 , H01L29/24 , H01L29/423
CPC分类号： H01L29/7869 , H01L21/0217 , H01L21/02164 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/124 , H01L27/1225 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
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公开(公告)号：US11676975B2
公开(公告)日：2023-06-13
申请号：US16104397
申请日：2018-08-17
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
IPC分类号： H01L27/12 , H01L21/84 , H01L27/108 , H01L27/11 , H01L27/11517 , H01L27/11521 , H01L27/1156 , H01L27/118 , H01L29/786 , H01L29/24 , G11C16/04 , G11C16/26
CPC分类号： H01L27/1255 , H01L21/84 , H01L27/108 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1156 , H01L27/11517 , H01L27/11521 , H01L27/11803 , H01L27/1225 , H01L29/24 , H01L29/7869 , G11C16/0433 , G11C16/26
摘要： An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.
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