公开(公告)号：US12230510B2

公开(公告)日：2025-02-18

申请号：US17566874

申请日：2021-12-31

Applicant: SEMES CO., LTD.

Inventor： Byoung Doo Choi ,  Jin Ho Choi

IPC: H01L21/47 ,  H01L21/67

Abstract: A substrate treating apparatus is disclosed. The substrate treating apparatus includes a treating container having a treatment space to treat a substrate, a standby port positioned at one side of the treating container to allow a nozzle, which discharges a treatment liquid, to stand by, and a liquid supplying unit moving between the treating container and the standby port and having the nozzle. The standby port includes a nozzle receiving member including a nozzle receiving unit having a receiving space formed inside the nozzle receiving unit to receive the nozzle and a cleaning liquid and a discharge part having a discharge port provided at one side of the nozzle cleaning unit to discharge the cleaning liquid to the nozzle. The discharge port is provided to overlap at least a portion of the nozzle when viewed from above.

公开(公告)号：US11984406B2

公开(公告)日：2024-05-14

申请号：US17386470

申请日：2021-07-27

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Yunsheng Xia ,  Jen-Chou Huang

IPC: H01L23/544 ,  G03F7/00 ,  G03F9/00 ,  H01L21/47

CPC classification number: H01L23/544 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7076 ,  H01L21/47 ,  H01L2223/54426 ,  H01L2223/54453

Abstract: The examples of the present application disclose a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a functional structure and a first mark structure located on a substrate, in which the functional structure and the first mark structure have the same feature size; and a first dielectric layer located at the functional structure and the first mark structure, in which a thickness of the first dielectric layer at the functional structure is different from a thickness of the first dielectric layer at the first mark structure. The examples of the present application can improve the alignment accuracy of the manufacturing process and improve the product yield and production efficiency at the same time.

公开(公告)号：US20230075390A1

公开(公告)日：2023-03-09

申请号：US17726673

申请日：2022-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yangsoo SON

IPC: H01L21/32 ,  H01L21/3105 ,  H01L21/47

Abstract: A method of fabricating a semiconductor device includes forming a cut-off region in at least one mandrel line among a plurality of mandrel lines, conformally forming a spacer material layer in the plurality of mandrel lines and a non-mandrel area and forming a cut spacer in the cut-off region and depositing a gap-fill material such that a cut block is formed on a portion of the non-mandrel area and a concave portion of the cut spacer is filled.

公开(公告)号：US20230009114A1

公开(公告)日：2023-01-12

申请号：US17668736

申请日：2022-02-10

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Ling-Yi CHUANG

IPC: H01L21/304 ,  H01L21/47 ,  H01L21/768

Abstract: A method for forming a semiconductor structure is provided. The method includes: providing a substrate; forming a groove in the substrate, in which a side wall of the groove is formed by sequential connection of a plurality of pits recessed into the substrate; forming a first material in the groove, in which the pits are completely filled with the first material; and exposing and developing the first material in the groove to obtain a through via structure.

公开(公告)号：US20220205100A1

公开(公告)日：2022-06-30

申请号：US17566874

申请日：2021-12-31

Applicant: SEMES CO., LTD.

Inventor： Byoung Doo CHOI ,  Jin Ho CHOI

IPC: C23C16/455 ,  H01L21/02 ,  H01L21/47

Abstract: A substrate treating apparatus is disclosed. The substrate treating apparatus includes a treating container having a treatment space to treat a substrate, a standby port positioned at one side of the treating container to allow a nozzle, which discharges a treatment liquid, to stand by, and a liquid supplying unit moving between the treating container and the standby port and having the nozzle. The standby port includes a nozzle receiving member including a nozzle receiving unit having a receiving space formed inside the nozzle receiving unit to receive the nozzle and a cleaning liquid and a discharge part having a discharge port provided at one side of the nozzle cleaning unit to discharge the cleaning liquid to the nozzle. The discharge port is provided to overlap at least a portion of the nozzle when viewed from above.

公开(公告)号：US10794853B2

公开(公告)日：2020-10-06

申请号：US15833552

申请日：2017-12-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Colin Neikirk ,  Yuriy Melnik ,  Pravin K. Narwankar

IPC: G01N27/414 ,  C23C16/46 ,  C23C16/52 ,  H01L23/29 ,  H01L21/56 ,  H01L21/285 ,  H01L21/312 ,  H01L21/47 ,  H01L21/02 ,  C23C16/448

Abstract: The present disclosure relates to a method of depositing a polymer layer, including: providing a substrate, having a sensor structure disposed on the substrate, to a substrate support within a hot wire chemical vapor deposition (HWCVD) chamber; providing a process gas comprising an initiator gas and a monomer gas and a carrier gas to the HWCVD chamber; heating a plurality of filaments disposed in the HWCVD chamber to a first temperature sufficient to activate the initiator gas without decomposing the monomer gas; and exposing the substrate to initiator radicals from the activated initiator gas and to the monomer gas to deposit a polymer layer atop the sensor structure.

公开(公告)号：US20200020576A1

公开(公告)日：2020-01-16

申请号：US16033179

申请日：2018-07-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Chih Chang ,  Yuan-Fu Ko ,  Chih-Sheng Chang

IPC: H01L21/768 ,  H01L21/47 ,  H01L21/02

Abstract: The present invention provides a method for forming a semiconductor device, comprising: first, a target layer is provided, an etching stop layer is formed on the target layer, afterwards, a first photoresist layer is formed on the etching stop layer, and a first etching process is then performed, to forma plurality of first trenches in the etching stop layer. Next, a second photoresist layer is formed on the etching stop layer, portion of the second photoresist layer fills in each first trench, a second etching process is then performed to form a plurality of second trenches in the etching stop layer, and using the remaining etching stop layer as a hard mask, a third etching process is performed to remove parts of the target layer.

公开(公告)号：US10158026B2

公开(公告)日：2018-12-18

申请号：US15262547

申请日：2016-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L29/78 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L29/786

Abstract: A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor.

公开(公告)号：US10134852B2

公开(公告)日：2018-11-20

申请号：US13920442

申请日：2013-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Takashi Hamochi ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/78 ,  H01L21/16 ,  H01L29/24 ,  H01L21/47 ,  H01L21/00 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.

公开(公告)号：US10109707B2

公开(公告)日：2018-10-23

申请号：US14577917

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/26 ,  H01L21/47 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/24 ,  H01L29/87 ,  H01L29/86 ,  H01L21/477 ,  H01L29/786 ,  H01L29/861 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.