-
公开(公告)号:US10978490B2
公开(公告)日:2021-04-13
申请号:US16535698
申请日:2019-08-08
摘要: An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.
-
公开(公告)号:US10811522B2
公开(公告)日:2020-10-20
申请号:US16209023
申请日:2018-12-04
发明人: Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号: H01L29/66 , H01L29/51 , H01L29/786 , H01L29/423 , H01L21/425 , H01L21/02 , H01L21/477 , H01L21/28
摘要: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
-
公开(公告)号:US20200052003A1
公开(公告)日:2020-02-13
申请号:US16546469
申请日:2019-08-21
IPC分类号: H01L27/12 , H01L29/24 , G02F1/1368 , G02F1/1362 , G02F1/1343 , G02F1/1337 , G02F1/1333 , H01L29/51 , H01L29/786
摘要: An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
-
公开(公告)号:US10516062B2
公开(公告)日:2019-12-24
申请号:US16003145
申请日:2018-06-08
发明人: Junichi Koezuka , Yukinori Shima , Hajime Tokunaga , Toshinari Sasaki , Keisuke Murayama , Daisuke Matsubayashi
IPC分类号: H01L29/786 , H01L21/02 , H01L29/51 , H01L29/66 , H01L29/24
摘要: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.
-
公开(公告)号:US10170598B2
公开(公告)日:2019-01-01
申请号:US15057457
申请日:2016-03-01
发明人: Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号: H01L29/786 , H01L29/66 , H01L21/02 , H01L21/441 , H01L21/465 , H01L29/24 , H01L27/12
摘要: An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.
-
公开(公告)号:US10062570B2
公开(公告)日:2018-08-28
申请号:US14480760
申请日:2014-09-09
IPC分类号: H01L21/02 , H01L29/66 , H01L29/786 , H01L27/12
CPC分类号: H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66765 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.
-
公开(公告)号:US09985118B2
公开(公告)日:2018-05-29
申请号:US15193827
申请日:2016-06-27
IPC分类号: H01L29/66 , H01L27/12 , H01L29/786 , H01L29/24 , H01L29/423
CPC分类号: H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
-
公开(公告)号:US09911860B2
公开(公告)日:2018-03-06
申请号:US15146980
申请日:2016-05-05
发明人: Kengo Akimoto , Toshinari Sasaki
IPC分类号: H01L29/02 , H01L29/786 , H01L27/12 , H01L29/04 , H01L29/24 , H01L29/423 , H01L29/45 , H01L29/66
CPC分类号: H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
-
公开(公告)号:US09812544B2
公开(公告)日:2017-11-07
申请号:US14935553
申请日:2015-11-09
发明人: Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号: H01L29/49 , H01L27/12 , H01L29/786 , H01L21/28 , H01L21/288 , H01L29/423 , H01L29/66
CPC分类号: H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要: To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
-
公开(公告)号:US09812465B2
公开(公告)日:2017-11-07
申请号:US14804508
申请日:2015-07-21
CPC分类号: H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1218 , H01L27/124 , H01L27/127 , H01L29/24 , H01L29/66969 , H01L29/78633 , H01L29/78645 , H01L29/78648 , H01L29/78654 , H01L29/7869 , H01L29/78696
摘要: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
-
-
-
-
-
-
-
-
-