公开(公告)号：US11683952B2

公开(公告)日：2023-06-20

申请号：US17360151

申请日：2021-06-28

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H10K50/844 ,  H01L51/52 ,  G09G3/3291 ,  H01L27/32 ,  H01L51/50 ,  G02F1/1362

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  H01L27/322 ,  H01L27/3211 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/525 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  G02F1/136222 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US09349775B2

公开(公告)日：2016-05-24

申请号：US14819550

申请日：2015-08-06

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US08878178B2

公开(公告)日：2014-11-04

申请号：US13706569

申请日：2012-12-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunichi Ito ,  Miyuki Hosoba

IPC分类号： H01L29/12 ,  H01L29/04 ,  H01L31/20 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78693 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/7869

摘要： An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.

摘要翻译： 目的是以低成本，高生产率制造包括氧化物半导体的半导体器件，使得通过减少曝光掩模的数量来简化光刻工艺。 在制造包括通道蚀刻反向交错薄膜晶体管的半导体器件的方法中，使用使用作为曝光的多色调掩模形成的掩模层来蚀刻氧化物半导体膜和导电膜 光透过该掩模以具有多个强度。 蚀刻步骤通过使用蚀刻溶液的湿蚀刻进行。

公开(公告)号：US08669579B2

公开(公告)日：2014-03-11

申请号：US13875491

申请日：2013-05-02

申请人： Semiconductor Energy Laboratory Co., Ltd

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US12057508B2

公开(公告)日：2024-08-06

申请号：US17436136

申请日：2020-03-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Shinya Sasagawa ,  Shunichi Ito ,  Erika Takahashi ,  Tetsuya Kakehata

IPC分类号： H01L29/786 ,  H10B12/00

CPC分类号： H01L29/786 ,  H10B12/00 ,  H01L29/78603 ,  H01L29/7869

摘要： A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

公开(公告)号：US10978490B2

公开(公告)日：2021-04-13

申请号：US16535698

申请日：2019-08-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/45 ,  G09G3/20 ,  H01L29/66

摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.

公开(公告)号：US20180315957A1

公开(公告)日：2018-11-01

申请号：US16031035

申请日：2018-07-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L51/52 ,  H01L51/50 ,  G09G3/3291 ,  H01L27/32

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US20160035796A1

公开(公告)日：2016-02-04

申请号：US14819550

申请日：2015-08-06

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

公开(公告)号：US08809891B2

公开(公告)日：2014-08-19

申请号：US14197442

申请日：2014-03-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hisao Ikeda ,  Hiroki Ohara ,  Makoto Hosoba ,  Junichiro Sakata ,  Shunichi Ito

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  G09G3/3291 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3272 ,  H01L51/5012 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/525 ,  H01L51/5262 ,  H01L51/5275 ,  H01L51/5284 ,  H01L2251/301 ,  H01L2251/5315 ,  H01L2251/5323 ,  H01L2251/5338 ,  H01L2251/5361

摘要： There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.

摘要翻译： 存在在其上设置的相对基板或防潮层之间的折射率差异，空气保持较大，光提取效率低的问题。 此外，存在容易产生由于防潮层而产生剥离或破裂的问题，导致发光元件的可靠性和寿命恶化。 发光元件包括依次堆叠的像素电极，电致发光层，透明电极，钝化膜，应力消除层和低折射率层。 应力消除层用于防止钝化膜的剥离。 低折射率层用于降低发射到空气中的电致发光层中产生的光的反射率。 因此，可以提供具有高可靠性和长寿命的发光元件和使用该发光元件的显示装置。

公开(公告)号：US10692894B2

公开(公告)日：2020-06-23

申请号：US16161573

申请日：2018-10-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunichi Ito ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Junichiro Sakata

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/26 ,  H01L29/45 ,  G09G3/20 ,  H01L29/24

摘要： An object is to control composition and a defect of an oxide semiconductor, another object is to increase a field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with a reduced off current. A solution is to employ an oxide semiconductor whose composition is represented by InMO3(ZnO)m, where M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and m is preferably a non-integer number of greater than 0 and less than 1. The concentration of Zn is lower than the concentrations of In and M. The oxide semiconductor has an amorphous structure. Oxide and nitride layers can be provided to prevent pollution and degradation of the oxide semiconductor.