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公开(公告)号：US20210391406A1
公开(公告)日：2021-12-16
申请号：US17152249
申请日：2021-01-19
发明人： Hyelim CHOI , Joonseok PARK , Myounghwa KIM , Taesang KIM , Yeonkeon MOON , Geunchul PARK , Sangwoo SOHN , Junhyung LIM
IPC分类号： H01L27/32
摘要： A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.
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公开(公告)号：US20180083084A1
公开(公告)日：2018-03-22
申请号：US15684452
申请日：2017-08-23
发明人： Jaybum KIM , Kyoungseok SON , Jihun LIM , Eoksu KIM , Junhyung LIM
IPC分类号： H01L27/32
CPC分类号： H01L27/3262 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2330/02 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/127 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L29/78675 , H01L29/7869 , H01L2227/323
摘要： A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
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公开(公告)号：US20210408292A1
公开(公告)日：2021-12-30
申请号：US17158824
申请日：2021-01-26
发明人： Sangwoo SOHN , Yeonkeon MOON , Myounghwa KIM , Taesang KIM , Geunchul PARK , Joonseok PARK , Junhyung LIM , Hyelim CHOI
IPC分类号： H01L29/786 , H01L29/24 , H01L27/32
摘要： A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.
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公开(公告)号：US20180076238A1
公开(公告)日：2018-03-15
申请号：US15657508
申请日：2017-07-24
发明人： Jihun LIM , Jaybum KIM , Joonseok PARK , Kyoungseok SON , Junhyung LIM
IPC分类号： H01L27/12 , H01L29/788 , H01L29/49 , H01L29/786
CPC分类号： H01L27/1251 , G02F1/136213 , G02F1/1368 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L27/1225 , H01L27/1237 , H01L27/124 , H01L27/1255 , H01L27/1262 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L29/4908 , H01L29/66757 , H01L29/66825 , H01L29/66969 , H01L29/78609 , H01L29/78675 , H01L29/7869 , H01L29/788 , H01L2227/323
摘要： A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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公开(公告)号：US20180061921A1
公开(公告)日：2018-03-01
申请号：US15685183
申请日：2017-08-24
发明人： Kyoungseok SON , Dohyun KWON , Jonghan JEONG , Jonghyun CHOI , Eoksu KIM , Jaybum KIM , Junhyung LIM , Jihun LIM
IPC分类号： H01L27/32
CPC分类号： H01L27/3262 , G09G3/3225 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2310/08 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L27/3272 , H01L29/78633 , H01L29/78675 , H01L29/7869
摘要： A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US20190341408A1
公开(公告)日：2019-11-07
申请号：US16515153
申请日：2019-07-18
发明人： Jihun LIM , Jaybum KIM , Joonseok PARK , Kyoungseok SON , Junhyung LIM
IPC分类号： H01L27/12 , H01L27/32 , H01L29/788 , H01L29/786 , H01L29/49
摘要： A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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公开(公告)号：US20180248045A1
公开(公告)日：2018-08-30
申请号：US15724600
申请日：2017-10-04
发明人： Junhyung LIM , Jaybum KIM , Kyoungseok SON , Jihun LIM
IPC分类号： H01L29/786 , H01L21/02 , H01L21/322 , H01L51/52 , H01L27/12 , H01L27/32 , H01L29/04 , H01L29/423
摘要： A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.
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公开(公告)号：US20230413620A1
公开(公告)日：2023-12-21
申请号：US18460345
申请日：2023-09-01
发明人： Eunhyun KIM , Eunhye KO , Yeonhong KIM , Kyoungwon LEE , Sunhee LEE , Junhyung LIM
IPC分类号： H10K59/126 , H10K59/131
CPC分类号： H10K59/126 , H10K59/131 , H10K77/111
摘要： A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.
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公开(公告)号：US20200235181A1
公开(公告)日：2020-07-23
申请号：US16836490
申请日：2020-03-31
发明人： KYOUNGSEOK SON , Dohyun KWON , Jonghan JEONG , Jonghyun CHOI , Eoksu KIM , Jaybum KIM , Junhyung LIM , Jihun LIM
IPC分类号： H01L27/32 , G09G3/3225 , G09G3/3233
摘要： A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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