公开(公告)号：US20220238720A1

公开(公告)日：2022-07-28

申请号：US17722611

申请日：2022-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20210408292A1

公开(公告)日：2021-12-30

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Yeonkeon MOON ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Joonseok PARK ,  Junhyung LIM ,  Hyelim CHOI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/32

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US20210036086A1

公开(公告)日：2021-02-04

申请号：US16880792

申请日：2020-05-21

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Myounghwa KIM ,  TaeSang KIM ,  Hyungjun KIM ,  Yeon Keon MOON ,  Joon Seok PARK ,  Sangwon SHIN ,  Jun Hyung LIM ,  Hyelim CHOI

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52 ,  H01L29/786

Abstract: A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.

公开(公告)号：US20220102458A1

公开(公告)日：2022-03-31

申请号：US17417632

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Seunghun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a first region and a second region, a first transistor, the first transistor including a first active layer having a source region and a drain region disposed in the first region on the substrate, a first gate electrode disposed on the first active layer, a first source electrode disposed on the first gate electrode, the first source electrode being connected to the source region, a sacrificial layer structure disposed to be spaced apart from the first source electrode, the sacrificial layer structure having an opening, a protective insulating layer disposed on the first source electrode and the sacrificial layer structure, and a first drain electrode disposed on the protective insulating layer, and a sub-pixel structure disposed on the first transistor.

公开(公告)号：US20220028963A1

公开(公告)日：2022-01-27

申请号：US17414355

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghun LEE ,  Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.

公开(公告)号：US20190181198A1

公开(公告)日：2019-06-13

申请号：US16133404

申请日：2018-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/50 ,  H01L51/56

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20230165064A1

公开(公告)日：2023-05-25

申请号：US18090401

申请日：2022-12-28

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H10K59/122 ,  H10K50/11 ,  H10K50/844 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K77/10 ,  H01L27/12

CPC classification number: H10K59/122 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1288 ,  H10K50/11 ,  H10K50/844 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  H10K59/1213 ,  H10K71/00 ,  H10K77/111 ,  H10K59/1201

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20200220021A1

公开(公告)日：2020-07-09

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20200185473A1

公开(公告)日：2020-06-11

申请号：US16789107

申请日：2020-02-12

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungseok SON ,  Myounghwa KIM ,  Eoksu KIM ,  Taesang KIM ,  Masataka KANO

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/50 ,  H01L27/12 ,  H01L51/56

Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.

公开(公告)号：US20210399074A1

公开(公告)日：2021-12-23

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon MOON ,  Joonseok PARK ,  Kwang-suk KIM ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Kyungjin JEON

IPC: H01L27/32 ,  H01L29/786

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.