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公开(公告)号：US20190181198A1
公开(公告)日：2019-06-13
申请号：US16133404
申请日：2018-09-17
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20180083084A1
公开(公告)日：2018-03-22
申请号：US15684452
申请日：2017-08-23
Applicant: Samsung Display Co., Ltd.
Inventor： Jaybum KIM , Kyoungseok SON , Jihun LIM , Eoksu KIM , Junhyung LIM
IPC: H01L27/32
CPC classification number: H01L27/3262 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2330/02 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/127 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L29/78675 , H01L29/7869 , H01L2227/323
Abstract: A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
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公开(公告)号：US20240155878A1
公开(公告)日：2024-05-09
申请号：US18412760
申请日：2024-01-15
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
IPC: H10K59/122 , H01L27/12 , H10K50/11 , H10K50/844 , H10K59/121 , H10K59/123 , H10K59/124 , H10K59/131 , H10K71/00 , H10K77/10
CPC classification number: H10K59/122 , H01L27/1225 , H01L27/124 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/1213 , H10K59/123 , H10K59/124 , H10K59/131 , H10K71/00 , H10K77/111 , H10K59/1201
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20210118966A1
公开(公告)日：2021-04-22
申请号：US17116943
申请日：2020-12-09
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20180076238A1
公开(公告)日：2018-03-15
申请号：US15657508
申请日：2017-07-24
Applicant: Samsung Display Co., Ltd.
Inventor： Jihun LIM , Jaybum KIM , Joonseok PARK , Kyoungseok SON , Junhyung LIM
IPC: H01L27/12 , H01L29/788 , H01L29/49 , H01L29/786
CPC classification number: H01L27/1251 , G02F1/136213 , G02F1/1368 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L27/1225 , H01L27/1237 , H01L27/124 , H01L27/1255 , H01L27/1262 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L29/4908 , H01L29/66757 , H01L29/66825 , H01L29/66969 , H01L29/78609 , H01L29/78675 , H01L29/7869 , H01L29/788 , H01L2227/323
Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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Patent Agency Ranking
公开(公告)号：US20180061921A1
公开(公告)日：2018-03-01
申请号：US15685183
申请日：2017-08-24
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kyoungseok SON , Dohyun KWON , Jonghan JEONG , Jonghyun CHOI , Eoksu KIM , Jaybum KIM , Junhyung LIM , Jihun LIM
IPC: H01L27/32
CPC classification number: H01L27/3262 , G09G3/3225 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2310/08 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L27/3272 , H01L29/78633 , H01L29/78675 , H01L29/7869
Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
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公开(公告)号：US20170270883A1
公开(公告)日：2017-09-21
申请号：US15463012
申请日：2017-03-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jonghee KIM , Kyoungseok SON , Kyoungju SHIN
IPC: G09G3/36
CPC classification number: G09G3/3677 , G09G3/3688 , G09G2300/0408 , G09G2310/0286 , G09G2310/0289 , G09G2310/0294 , G09G2310/08
Abstract: A gate driving circuit includes a plurality of stages to provide gate signals to gate lines of a display panel. At least one of the stages includes an input circuit receiving a carry signal from a previous stage. A first output circuit outputs a first clock signal as a gate signal. The second output circuit outputs the clock signal as a carry signal. The discharge hold circuit delivers the clock signal to a node based on the clock signal and discharges the node as a second voltage based on the carry signal. The pull down circuit discharges the gate signal as a first voltage based on a signal of the node and a succeeding carry signal from a succeeding stage and discharges another node and the carry signal as the second voltage. The switching circuit delivers the carry signal from the previous stage based on a second clock signal.
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公开(公告)号：US20230165064A1
公开(公告)日：2023-05-25
申请号：US18090401
申请日：2022-12-28
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
IPC: H10K59/122 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/121 , H10K71/00 , H10K77/10 , H01L27/12
CPC classification number: H10K59/122 , H01L27/124 , H01L27/1225 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/1213 , H10K71/00 , H10K77/111 , H10K59/1201
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20200185473A1
公开(公告)日：2020-06-11
申请号：US16789107
申请日：2020-02-12
Applicant: Samsung Display Co., Ltd.
Inventor： Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
Abstract: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
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公开(公告)号：US20190341408A1
公开(公告)日：2019-11-07
申请号：US16515153
申请日：2019-07-18
Applicant: Samsung Display Co., Ltd.
Inventor： Jihun LIM , Jaybum KIM , Joonseok PARK , Kyoungseok SON , Junhyung LIM
IPC: H01L27/12 , H01L27/32 , H01L29/788 , H01L29/786 , H01L29/49
Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.
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