-
公开(公告)号:US20180061921A1
公开(公告)日:2018-03-01
申请号:US15685183
申请日:2017-08-24
发明人: Kyoungseok SON , Dohyun KWON , Jonghan JEONG , Jonghyun CHOI , Eoksu KIM , Jaybum KIM , Junhyung LIM , Jihun LIM
IPC分类号: H01L27/32
CPC分类号: H01L27/3262 , G09G3/3225 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2310/08 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L27/3272 , H01L29/78633 , H01L29/78675 , H01L29/7869
摘要: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
-
2.
公开(公告)号:US20160266457A1
公开(公告)日:2016-09-15
申请号:US15006259
申请日:2016-01-26
发明人: Jun-hee LEE , Eoksu KIM , Wonjin KIM , Juyong PARK , Jungchul WOO , Hyunwook LEE
IPC分类号: G02F1/1362 , G02F1/1368 , G02F1/1341 , G02F1/1343 , G02F1/1337 , H01L27/12 , G02F1/1335
CPC分类号: H01L27/124 , G02F1/1309 , G02F1/133351 , G02F1/1339 , G02F1/1341 , G02F2001/13415 , G02F2001/136254 , G02F2201/56 , G02F2203/69 , G09G3/006 , G09G2330/12 , H01L27/1218
摘要: A liquid crystal cell panel includes a first substrate from which is formed a thin film transistor array substrate, the first substrate including a plurality of unit cells and test terminals which respectively correspond to the unit cells, and a second substrate which faces the first substrate and from which is formed a color filter substrate. The first substrate further includes a first cutting pattern at each of a plurality of corners thereof, and the second substrate includes a second cutting pattern at each of a plurality of corners thereof, the second cutting patterns corresponding one-to-one with the first cutting patterns. Corresponding first and second cutting patterns cross each other in a plan view, and the crossing first and second cutting patterns expose a test terminal adjacent to the crossing first and second cutting patterns to outside the liquid crystal cell panel.
摘要翻译: 液晶单元面板包括形成有薄膜晶体管阵列基板的第一基板,所述第一基板包括分别对应于所述单位单元的多个单元电池和测试端子,以及面向所述第一基板的第二基板和 由此形成滤色器基板。 第一基板还包括在其多个拐角中的每一个处的第一切割图案,并且第二基板在其多个拐角中的每一个处包括第二切割图案,第二切割图案与第一切割一一对应 模式。 对应的第一和第二切割图案在平面图中彼此交叉,并且交叉的第一和第二切割图案将与交叉的第一和第二切割图案相邻的测试端子暴露于液晶单元面板的外部。
-
公开(公告)号:US20220036824A1
公开(公告)日:2022-02-03
申请号:US17413617
申请日:2018-12-18
发明人: Sunhee LEE , Seryeong KIM , Eunhye KO , Eoksu KIM , Eunhyun KIM
IPC分类号: G09G3/3233 , G09G3/3266 , G09G3/3275
摘要: A pixel circuit includes an organic light emitting element, a switching transistor configured to be turned on or off in response to a scan signal, a storage capacitor configured to store a data signal applied through a data line when the switching transistor is turned on, a driving transistor configured to allow a driving current corresponding to the data signal stored in the storage capacitor to flow into the organic light emitting element, and an emission control transistor implemented by an oxide thin film transistor, connected in series to the organic light emitting element and the driving transistor between a high power voltage and a low power voltage, and configured to be turned on or off in response to an emission control signal. The pixel circuit performs a back-biasing operation that compensates for a change in a threshold voltage of the emission control transistor by applying a back-biasing voltage to the emission control transistor.
-
公开(公告)号:US20200235181A1
公开(公告)日:2020-07-23
申请号:US16836490
申请日:2020-03-31
发明人: KYOUNGSEOK SON , Dohyun KWON , Jonghan JEONG , Jonghyun CHOI , Eoksu KIM , Jaybum KIM , Junhyung LIM , Jihun LIM
IPC分类号: H01L27/32 , G09G3/3225 , G09G3/3233
摘要: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.
-
公开(公告)号:US20230165064A1
公开(公告)日:2023-05-25
申请号:US18090401
申请日:2022-12-28
发明人: Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
IPC分类号: H10K59/122 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/121 , H10K71/00 , H10K77/10 , H01L27/12
CPC分类号: H10K59/122 , H01L27/124 , H01L27/1225 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/123 , H10K59/124 , H10K59/131 , H10K59/1213 , H10K71/00 , H10K77/111 , H10K59/1201
摘要: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
-
公开(公告)号:US20200185473A1
公开(公告)日:2020-06-11
申请号:US16789107
申请日:2020-02-12
发明人: Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
摘要: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
-
公开(公告)号:US20190181198A1
公开(公告)日:2019-06-13
申请号:US16133404
申请日:2018-09-17
发明人: Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
摘要: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
-
公开(公告)号:US20180083084A1
公开(公告)日:2018-03-22
申请号:US15684452
申请日:2017-08-23
发明人: Jaybum KIM , Kyoungseok SON , Jihun LIM , Eoksu KIM , Junhyung LIM
IPC分类号: H01L27/32
CPC分类号: H01L27/3262 , G09G3/3225 , G09G3/3266 , G09G3/3275 , G09G2300/0413 , G09G2300/0426 , G09G2330/02 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/127 , H01L27/3248 , H01L27/3258 , H01L27/3265 , H01L29/78675 , H01L29/7869 , H01L2227/323
摘要: A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.
-
公开(公告)号:US20240155878A1
公开(公告)日:2024-05-09
申请号:US18412760
申请日:2024-01-15
发明人: Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
IPC分类号: H10K59/122 , H01L27/12 , H10K50/11 , H10K50/844 , H10K59/121 , H10K59/123 , H10K59/124 , H10K59/131 , H10K71/00 , H10K77/10
CPC分类号: H10K59/122 , H01L27/1225 , H01L27/124 , H01L27/1288 , H10K50/11 , H10K50/844 , H10K59/1213 , H10K59/123 , H10K59/124 , H10K59/131 , H10K71/00 , H10K77/111 , H10K59/1201
摘要: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
-
公开(公告)号:US20210118966A1
公开(公告)日:2021-04-22
申请号:US17116943
申请日:2020-12-09
发明人: Kyoungseok SON , Myounghwa KIM , Eoksu KIM , Taesang KIM , Masataka KANO
摘要: A method of fabricating a display panel may include forming an oxide semiconductor pattern on a base layer including a first region and a second region, etching first, second, and third insulating layers to form a first groove that overlaps the second region, forming electrodes on the third insulating layer, forming a fourth insulating layer on the third insulating layer to cover the electrodes, thermally treating the fourth insulating layer, forming an organic layer to cover the fourth insulating layer, and forming an organic light emitting diode on the organic layer.
-
-
-
-
-
-
-
-
-