公开(公告)号：US20200235181A1

公开(公告)日：2020-07-23

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KYOUNGSEOK SON ,  Dohyun KWON ,  Jonghan JEONG ,  Jonghyun CHOI ,  Eoksu KIM ,  Jaybum KIM ,  Junhyung LIM ,  Jihun LIM

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20180083084A1

公开(公告)日：2018-03-22

申请号：US15684452

申请日：2017-08-23

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum KIM ,  Kyoungseok SON ,  Jihun LIM ,  Eoksu KIM ,  Junhyung LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/3225 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2330/02 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2227/323

Abstract: A semiconductor device includes a base substrate, a first transistor including a first semiconductor pattern, a first control electrode, a first input electrode, and a first output electrode, each of which is disposed on the base substrate, a second transistor including a second semiconductor pattern, a second control electrode, a second input electrode, and a second output electrode, and a plurality of insulating layers. A single first through part exposes the first control electrode and the first semiconductor pattern disposed on both sides of the first control electrode.

公开(公告)号：US20190074377A1

公开(公告)日：2019-03-07

申请号：US16108454

申请日：2018-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L23/532 ,  H01L27/32

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20220238720A1

公开(公告)日：2022-07-28

申请号：US17722611

申请日：2022-04-18

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20180076238A1

公开(公告)日：2018-03-15

申请号：US15657508

申请日：2017-07-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L29/788 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L27/1251 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/788 ,  H01L2227/323

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20180061921A1

公开(公告)日：2018-03-01

申请号：US15685183

申请日：2017-08-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok SON ,  Dohyun KWON ,  Jonghan JEONG ,  Jonghyun CHOI ,  Eoksu KIM ,  Jaybum KIM ,  Junhyung LIM ,  Jihun LIM

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0413 ,  G09G2300/0426 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3258 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US20200220021A1

公开(公告)日：2020-07-09

申请号：US16819496

申请日：2020-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joonseok PARK ,  Jihun LIM ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON

IPC: H01L29/786 ,  H01L29/24 ,  H01L23/532 ,  H01L27/32 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.

公开(公告)号：US20190341408A1

公开(公告)日：2019-11-07

申请号：US16515153

申请日：2019-07-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jihun LIM ,  Jaybum KIM ,  Joonseok PARK ,  Kyoungseok SON ,  Junhyung LIM

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/788 ,  H01L29/786 ,  H01L29/49

Abstract: A transistor includes a semiconductor layer comprising a channel portion, a first contact portion and a second contact portion, a gate electrode facing the floating gate, and a floating gate disposed between the semiconductor layer and the gate electrode, the floating gate being insulated from the semiconductor layer and the gate electrode. The floating gate comprises an oxide semiconductor.

公开(公告)号：US20180248045A1

公开(公告)日：2018-08-30

申请号：US15724600

申请日：2017-10-04

Applicant: Samsung Display Co., Ltd.

Inventor： Junhyung LIM ,  Jaybum KIM ,  Kyoungseok SON ,  Jihun LIM

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/322 ,  H01L51/52 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/423

Abstract: A semiconductor device may include a base substrate, a first thin-film transistor (“TFT”) provided on the base substrate, a second TFT provided on the base substrate, and a plurality of insulating layers provided on the base substrate to define at least one dummy hole that is not overlapped with the first and second TFTs. The first TFT may include a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor material, and the second TFT may include a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor material. A shortest distance between the at least one dummy hole and the second semiconductor pattern may be equal to or shorter than 5 micrometers (μm), in a plan view.