公开(公告)号：US20200052056A1

公开(公告)日：2020-02-13

申请号：US16539761

申请日：2019-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Yeon Keon MOON ,  Kwang Suk KIM ,  Tae Sang KIM ,  Geunchul PARK ,  Kyung Jin JEON

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

公开(公告)号：US20200098924A1

公开(公告)日：2020-03-26

申请号：US16563699

申请日：2019-09-06

Applicant: Samsung Display Co., Ltd.

Inventor： Tae Sang KIM ,  Joon Seok PARK ,  Kwang Suk KIM ,  Yeon Keon MOON ,  Geunchul PARK ,  Jun Hyung LIM ,  Kyung Jin JEON

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/467 ,  H01L29/66

Abstract: A transistor substrate may include: a substrate; an active pattern formed on the substrate, the active pattern including an oxide semiconductor that contains tin (Sn), and the active pattern including a source region, a drain region, and a channel region that is formed between the source region and the drain region; a source protective pattern formed on the source region; a drain protective pattern formed on the drain region; a gate electrode overlapping at least a portion of the channel region; an insulation interlayer covering the source protective pattern and the drain protective pattern; a source electrode formed on the insulation interlayer, the source electrode being in contact with the source protective pattern through a source contact hole that is formed in the insulation interlayer; and a drain electrode formed on the insulation interlayer, the drain electrode being in contact with the drain protective pattern through a drain contact hole that is formed in the insulation interlayer.

公开(公告)号：US20210391406A1

公开(公告)日：2021-12-16

申请号：US17152249

申请日：2021-01-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyelim CHOI ,  Joonseok PARK ,  Myounghwa KIM ,  Taesang KIM ,  Yeonkeon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Junhyung LIM

IPC: H01L27/32

Abstract: A display device includes: a substrate including a first region and a second region; a first active layer located on the first region and including a first channel region, a first source region at one side of the first channel region, a first drain region at the other side of the first channel region, and a first extension region extending in a direction from the first source region to the second region; a first gate electrode located above the first active layer and overlapping the first channel region; a driving voltage line located on the first active layer, overlapping the first source region, and extending along the first extension region; a first connection electrode located on the first drain region; and a pixel electrode located above the first gate electrode and connected to the first connection electrode.

公开(公告)号：US20210399074A1

公开(公告)日：2021-12-23

申请号：US17287936

申请日：2019-02-20

Applicant: Samsung Display Co., Ltd.

Inventor： Yeonkeon MOON ,  Joonseok PARK ,  Kwang-suk KIM ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Kyungjin JEON

IPC: H01L27/32 ,  H01L29/786

Abstract: A transistor substrate may include a substrate including a first region and a second region, a first buffer layer disposed in the first region on the substrate and including silicon nitride, a second buffer layer disposed in the first region and the second region on the first buffer layer and including silicon oxide, a first transistor disposed in the first region on the second buffer layer and including a first oxide semiconductor layer and a first gate electrode overlapping the first oxide semiconductor layer, and a second transistor disposed in the second region on the second buffer layer and including a second oxide semiconductor layer and a second gate electrode overlapping the second oxide semiconductor layer.

公开(公告)号：US20210098561A1

公开(公告)日：2021-04-01

申请号：US16885598

申请日：2020-05-28

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok PARK ,  Myounghwa KIM ,  Tae Sang KIM ,  Hyungjun KIM ,  Yeon Keon MOON ,  Geunchul PARK ,  Sangwoo SOHN ,  Jun Hyung LIM ,  Kyung Jin JEON ,  Hye Lim CHOI

IPC: H01L27/32

Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

公开(公告)号：US20210408292A1

公开(公告)日：2021-12-30

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo SOHN ,  Yeonkeon MOON ,  Myounghwa KIM ,  Taesang KIM ,  Geunchul PARK ,  Joonseok PARK ,  Junhyung LIM ,  Hyelim CHOI

IPC: H01L29/786 ,  H01L29/24 ,  H01L27/32

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US20210327964A1

公开(公告)日：2021-10-21

申请号：US17283714

申请日：2019-02-01

Applicant: Samsung Display Co., Ltd.

Inventor： Kyungjin JEON ,  Joon-seok PARK ,  Kwang-suk KIM ,  Taesang KIM ,  Yeon-keon MOON ,  Geunchul PARK ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a base substrate including a first sub-pixel area, a second sub-pixel area, and a third sub-pixel area, first to third thin film transistors on the base substrate and including first to third active patterns, respectively, first to third pixel electrodes electrically connected to the first to third thin film transistors, respectively and in the first to third sub-pixel areas, respectively, a blue light emitting layer on the first to third pixel electrodes and configured to emit a blue light, a first color conversion pattern in the first sub-pixel area on the blue light emitting layer, a second color conversion pattern in the second sub-pixel area on the blue light emitting layer, and a red color filter layer between the blue light emitting layer and the first to third active patterns.