公开(公告)号：US20220102458A1

公开(公告)日：2022-03-31

申请号：US17417632

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Seunghun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a first region and a second region, a first transistor, the first transistor including a first active layer having a source region and a drain region disposed in the first region on the substrate, a first gate electrode disposed on the first active layer, a first source electrode disposed on the first gate electrode, the first source electrode being connected to the source region, a sacrificial layer structure disposed to be spaced apart from the first source electrode, the sacrificial layer structure having an opening, a protective insulating layer disposed on the first source electrode and the sacrificial layer structure, and a first drain electrode disposed on the protective insulating layer, and a sub-pixel structure disposed on the first transistor.

公开(公告)号：US20220028963A1

公开(公告)日：2022-01-27

申请号：US17414355

申请日：2019-03-06

Applicant: Samsung Display Co., Ltd.

Inventor： Seunghun LEE ,  Myounghwa KIM ,  Jaybum KIM ,  Kyoung-seok SON ,  Seungjun LEE ,  Jun-hyung LIM

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the protective insulating layer, the first drain electrode constituting a driving transistor together with the first active layer, the first gate electrode, and the first source electrode, a switching transistor disposed in the second region between the substrate and the protective insulating layer, a lower electrode disposed on the switching transistor and the driving transistor, a light emitting layer disposed on the lower electrode, and an upper electrode disposed on the light emitting layer.