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    DISPLAY APPARATUS
    2.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20210066661A1

    公开(公告)日：2021-03-04

    申请号：US16997101

    申请日：2020-08-19

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Sunho KIM ,  Sunhee LEE ,  Gunhee KIM ,  Hyun KIM

    IPC分类号： H01L51/52 ,  H01L27/32

    摘要： A display apparatus includes a substrate having a display area and a per9pheral area surrounding the display area. Display elements are arranged in the display area. A spacer is disposed between the display elements and includes a lateral side having a first slope. A thin film encapsulation layer covers the display area and includes a buffer encapsulation layer, an inorganic, encapsulation layer, an organic encapsulation layer, and a composite encapsulation layer sequentially stacked on one another. The composite encapsulation layer includes a plurality of sub-layers stacked on each other. Each of the sub-layers has a thickness that is less than a thickness of the inorganic encapsulation layer. An upper surface of the buffer encapsulation layer has a second slope that is smaller than the first slope. The second slope overlaps the first slope in a direction of a thickness of the substrate.

    DISPLAY APPARATUS
    3.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20170373128A1

    公开(公告)日：2017-12-28

    申请号：US15375206

    申请日：2016-12-12

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Sunhee LEE ,  Juchan PARK ,  Younggug SEOL ,  Pilsuk LEE

    IPC分类号： H01L27/32 ,  H01L51/52

    CPC分类号： H01L27/3276 ,  H01L27/3258 ,  H01L51/5237 ,  H01L51/5253

    摘要： A display apparatus includes a substrate, a display unit over the substrate, the display unit including a thin film transistor, a display element connected to the thin film transistor, and a planarization layer between the thin film transistor and the display element. The display unit includes a display area to display an image, and a non-display area outside of the display area. The non-display area includes a plurality of voltage lines. The planarization layer extends into the non-display area and includes a divisional portion that divides the planarization layer into a central portion and a peripheral portion. The divisional portion surrounds the display area. An interlayer insulating film is between voltage lines at intersections of the voltage lines with each other in the divisional portion. A protecting film covers a side of the interlayer insulating film in the divisional portion.

    DISPLAY APPARATUS
    5.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20230109818A1

    公开(公告)日：2023-04-13

    申请号：US18059776

    申请日：2022-11-29

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Sunhee LEE ,  Sunho KIM ,  Gunhee KIM ,  Donghwan SHIM ,  Taehoon YANG

    IPC分类号： H01L51/00 ,  H01L27/146

    摘要： A display apparatus includes: a substrate including a display area and a peripheral area around the display area, the substrate having a bent portion; a plurality of display elements in the display area; and a thin film encapsulation layer over the plurality of display elements and including a first encapsulation layer, a second encapsulation layer over the first encapsulation layer, and an organic encapsulation layer between the first encapsulation layer and the second encapsulation layer, wherein the second encapsulation layer includes a plurality of inorganic thin layers and a plurality of organic thin layers alternately arranged, and a thickness of the second encapsulation layer is equal to or less than a thickness of the first encapsulation layer.

    DISPLAY APPARATUS
    6.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20230413620A1

    公开(公告)日：2023-12-21

    申请号：US18460345

    申请日：2023-09-01

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Eunhyun KIM ,  Eunhye KO ,  Yeonhong KIM ,  Kyoungwon LEE ,  Sunhee LEE ,  Junhyung LIM

    IPC分类号： H10K59/126 ,  H10K59/131

    CPC分类号： H10K59/126 ,  H10K59/131 ,  H10K77/111

    摘要： A display apparatus in which an area of a peripheral area may be reduced while having a simple structure, the display apparatus includes a substrate, a bottom metal layer on the substrate and including a first extension line extending from the peripheral area outside a display area into the display area, a semiconductor layer on the bottom metal layer, a gate layer on the semiconductor layer, a first metal layer on the gate layer, and a second metal layer on the first metal layer and including a first data line extending from the peripheral area into the display area and electrically coupled to the first extension line in the peripheral area.

    PIXEL CIRCUIT AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME
    7.
    发明申请
    PIXEL CIRCUIT AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20220036824A1

    公开(公告)日：2022-02-03

    申请号：US17413617

    申请日：2018-12-18

    申请人： Samsung Display Co., Ltd.

    发明人： Sunhee LEE ,  Seryeong KIM ,  Eunhye KO ,  Eoksu KIM ,  Eunhyun KIM

    IPC分类号： G09G3/3233 ,  G09G3/3266 ,  G09G3/3275

    摘要： A pixel circuit includes an organic light emitting element, a switching transistor configured to be turned on or off in response to a scan signal, a storage capacitor configured to store a data signal applied through a data line when the switching transistor is turned on, a driving transistor configured to allow a driving current corresponding to the data signal stored in the storage capacitor to flow into the organic light emitting element, and an emission control transistor implemented by an oxide thin film transistor, connected in series to the organic light emitting element and the driving transistor between a high power voltage and a low power voltage, and configured to be turned on or off in response to an emission control signal. The pixel circuit performs a back-biasing operation that compensates for a change in a threshold voltage of the emission control transistor by applying a back-biasing voltage to the emission control transistor.

    DISPLAY APPARATUS
    8.
    发明申请
    DISPLAY APPARATUS 有权

    公开(公告)号：US20210126224A1

    公开(公告)日：2021-04-29

    申请号：US17024110

    申请日：2020-09-17

    申请人： Samsung Display Co., Ltd.

    发明人： Sunhee LEE ,  Sunho KIM ,  Gunhee KIM ,  Donghwan SHIM ,  Taehoon YANG

    IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L27/32

    摘要： A display apparatus includes: a substrate including a display area and a peripheral area around the display area, the substrate having a bent portion; a plurality of display elements in the display area; and a thin film encapsulation layer over the plurality of display elements and including a first encapsulation layer, a second encapsulation layer over the first encapsulation layer, and an organic encapsulation layer between the first encapsulation layer and the second encapsulation layer, wherein the second encapsulation layer includes a plurality of inorganic thin layers and a plurality of organic thin layers alternately arranged, and a thickness of the second encapsulation layer is equal to or less than a thickness of the first encapsulation layer.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20180040639A1

    公开(公告)日：2018-02-08

    申请号：US15654005

    申请日：2017-07-19

    申请人： Samsung Display Co., Ltd.

    发明人： Sunhee LEE ,  Seryeong KIM ,  Eunhyun KIM

    IPC分类号： H01L27/12 ,  H01L27/32

    CPC分类号： H01L27/1225 ,  H01L27/1229 ,  H01L27/1237 ,  H01L27/127 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3272 ,  H01L2227/323

    摘要： A semiconductor device includes a base substrate, a first thin film transistor disposed on the base substrate, a second thin film transistor disposed on the base substrate, and a plurality of insulating layers disposed on the base substrate. The first thin film transistor includes a first input electrode, a first output electrode, a first control electrode, and a first oxide semiconductor pattern, which are disposed on the base substrate. The second thin film transistor includes a second input electrode, a second output electrode, a second control electrode, and a second oxide semiconductor pattern, which are disposed on the base substrate. The first oxide semiconductor pattern includes a crystalline oxide semiconductor, and the second oxide semiconductor pattern includes an oxide semiconductor having a crystal structure different from a crystal structure of the first oxide semiconductor pattern.