公开(公告)号：US20070069394A1

公开(公告)日：2007-03-29

申请号：US11459249

申请日：2006-07-21

Applicant: Mark Bachman ,  Donald Bitting ,  Sailesh Chittipeddi ,  Seung Kang ,  Sailesh Merchant

Inventor： Mark Bachman ,  Donald Bitting ,  Sailesh Chittipeddi ,  Seung Kang ,  Sailesh Merchant

IPC: H01L23/48

CPC classification number: H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05556 ,  H01L2224/05568 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: The invention provides, in one aspect, a semiconductor device that comprises an interconnect layer located over a semiconductor substrate. A passivation layer is located over the interconnect layer and having a solder bump support opening formed therein. Support pillars that comprise a conductive material are located within the solder bump support opening.

Abstract translation: 本发明在一个方面提供一种半导体器件，其包括位于半导体衬底之上的互连层。 钝化层位于互连层上并且具有形成在其中的焊料凸块支撑开口。 包括导电材料的支撑柱位于焊料凸块支撑开口内。

公开(公告)号：US20070228572A1

公开(公告)日：2007-10-04

申请号：US11649015

申请日：2007-01-03

Applicant: Sailesh Chittipeddi ,  Sailesh Merchant

Inventor： Sailesh Chittipeddi ,  Sailesh Merchant

IPC: H01L23/48

CPC classification number: H01L23/53295 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit structure includes a metallization level having a dual damascene trench structure formed in a layer of dielectric material. The dielectric material has an upper surface with a first degree of planarity. The metallization level includes a conductive layer formed in the trench structure with an upper surface characterized by the same level of planarity as the dielectric material upper surface. In certain embodiments, the upper surface of the conductive layer is substantially coplanar with the dielectric material upper surface.

Abstract translation: 集成电路结构包括具有形成在电介质材料层中的双镶嵌沟槽结构的金属化层。 电介质材料具有第一平面度的上表面。 金属化层包括形成在沟槽结构中的导电层，其上表面具有与电介质材料上表面相同的平面度水平。 在某些实施例中，导电层的上表面与电介质材料上表面基本共面。

公开(公告)号：US07727894B2

公开(公告)日：2010-06-01

申请号：US11649015

申请日：2007-01-03

Applicant: Sailesh Chittipeddi ,  Sailesh Merchant

Inventor： Sailesh Chittipeddi ,  Sailesh Merchant

IPC: H01L21/311 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L23/53295 ,  H01L21/7684 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit structure includes a metallization level having a dual damascene trench structure formed in a layer of dielectric material. The dielectric material has an upper surface with a first degree of planarity. The metallization level includes a conductive layer formed in the trench structure with an upper surface characterized by the same level of planarity as the dielectric material upper surface. In certain embodiments, the upper surface of the conductive layer is substantially coplanar with the dielectric material upper surface.

Abstract translation: 集成电路结构包括具有形成在电介质材料层中的双镶嵌沟槽结构的金属化层。 电介质材料具有第一平面度的上表面。 金属化层包括形成在沟槽结构中的导电层，其上表面具有与电介质材料上表面相同的平面度水平。 在某些实施例中，导电层的上表面与电介质材料上表面基本共面。

公开(公告)号：US20050035466A1

公开(公告)日：2005-02-17

申请号：US10939292

申请日：2004-09-10

Applicant: Sailesh Chittipeddi ,  Sailesh Merchant

Inventor： Sailesh Chittipeddi ,  Sailesh Merchant

IPC: H01L21/60 ,  H01L21/607 ,  H01L23/485 ,  H01L29/40

CPC classification number: H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/04042 ,  H01L2224/05681 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/456 ,  H01L2224/45624 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/78301 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85375 ,  H01L2224/85948 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/00 ,  H01L2224/48781 ,  H01L2224/48681 ,  H01L2224/45147 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/01006

Abstract: The present invention uses wire bonding technology to bond interconnect materials that oxidize easily by using a wire with stable oxidation qualities. A passivation layer is formed on the semiconductor substrate to encapsulate the bonding pad made from the interconnect material such that the wire bonds with the passivation layer itself, not with the interconnect material. The passivation layer is selected to be a material that is metallurgically stable when bonded to the interconnect material. Since the wire is stable compared with the interconnect material, i.e., it does not readily corrode, a reliable mechanical and electrical connection is provided between the semiconductor device (interconnect material) and the wire, with the passivation layer disposed therebetween.

Abstract translation: 本发明使用引线接合技术，通过使用具有稳定的氧化特性的导线，可以容易地接合易氧化的互连材料。 在半导体衬底上形成钝化层以封装由互连材料制成的接合焊盘，使得引线与钝化层本身而不是与互连材料结合。 钝化层选择为当结合到互连材料时是冶金稳定的材料。 由于线与互连材料相比是稳定的，即不易腐蚀，所以在半导体器件（互连材料）和导线之间提供可靠的机械和电连接，其中钝化层位于它们之间。

公开(公告)号：US20100188987A1

公开(公告)日：2010-07-29

申请号：US12322028

申请日：2009-01-28

Applicant: Kouros Azimi ,  Roger Fratti ,  Sailesh Merchant ,  Mohammad Mobin ,  Kenneth Paist

Inventor： Kouros Azimi ,  Roger Fratti ,  Sailesh Merchant ,  Mohammad Mobin ,  Kenneth Paist

IPC: G08C15/00

CPC classification number: H04W48/04 ,  H04W12/06 ,  H04W64/00

Abstract: In described embodiments, elements of a wireless home network employ learned power security for the network. An access point, router, or other wireless base station emits and receives signals having corresponding signal strengths. Wireless devices coupled to the base station through a radio link are moved through the home network at boundary points of the home and the signal strength is measured at each device and communicated to the base station. Based on the signal strength information from the emitted signals measured at the boundary points and/or from measured signal strength information of signals received from the boundary points, the base station determines a network secure area. The base station declines permission of devices attempting to use or join the home network that exhibit signal strength characteristics less than boundary values for the network secure area.

Abstract translation: 在所描述的实施例中，无线家庭网络的元件采用学习的网络安全性。 接入点，路由器或其他无线基站发射和接收具有相应信号强度的信号。 通过无线电链路耦合到基站的无线设备在家庭的边界点移动通过家庭网络，并且在每个设备处测量信号强度并将其传送到基站。 基于从边界点测量的发射信号的信号强度信息和/或从边界点接收的信号的测量信号强度信息，基站确定网络安全区域。 基站拒绝尝试使用或加入家庭网络的设备的权限，这些设备的信号强度特性小于网络安全区域的边界值。

公开(公告)号：US20060065969A1

公开(公告)日：2006-03-30

申请号：US10955913

申请日：2004-09-30

Applicant: Joze Antol ,  Philip Seitzer ,  Daniel Chesire ,  Rafe Mengel ,  Vance Archer ,  Thomas Gans ,  Taeho Kook ,  Sailesh Merchant

Inventor： Joze Antol ,  Philip Seitzer ,  Daniel Chesire ,  Rafe Mengel ,  Vance Archer ,  Thomas Gans ,  Taeho Kook ,  Sailesh Merchant

IPC: H01L23/053

CPC classification number: H01L24/05 ,  H01L23/3171 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05093 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/451 ,  H01L2224/48463 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2224/45099 ,  H01L2924/00015

Abstract: Disclosed herein are novel support structures for pad reinforcement in conjunction with new bond pad designs for semiconductor devices. The new bond pad designs avoid the problems associated with probe testing by providing a probe region that is separate from a wire bond region. Separating the probe region 212 from the wire bond region 210 and forming the bond pad 211 over active circuitry has several advantages. By separating the probe region 212 from the wire bond region 210, the wire bond region 210 is not damaged by probe testing, allowing for more reliable wire bonds. Also, forming the bond pad 211 over active circuitry, including metal interconnect layers, allows the integrated circuit to be smaller.

Abstract translation: 这里公开了用于衬垫加强的新型支撑结构以及用于半导体器件的新的接合焊盘设计。 新的焊盘设计通过提供与引线键合区域分离的探针区域来避免与探针测试相关的问题。 将探针区域212与引线接合区域210分离并通过有源电路形成接合焊盘211具有若干优点。 通过将探针区域212与引线键合区域210分离，引线键合区域210不会被探针测试所损坏，从而允许更可靠的引线键合。 此外，在包括金属互连层的有源电路上形成接合焊盘211允许集成电路更小。

公开(公告)号：US20120282980A1

公开(公告)日：2012-11-08

申请号：US13101222

申请日：2011-05-05

Applicant: Joseph Michael Freund ,  Anthony Grewe ,  Sailesh Merchant ,  David Herring

Inventor： Joseph Michael Freund ,  Anthony Grewe ,  Sailesh Merchant ,  David Herring

IPC: H04W88/02

CPC classification number: H04M1/0256 ,  H04M1/0216 ,  H04M1/72527

Abstract: A mobile communication device having a plurality of mobile devices coupled to one another. The mobile communication device includes a first mobile device that has a screen display portion and a user input portion. The mobile communication device also includes at least one second mobile device detachably coupled to the first mobile device. The first mobile device is configured to function as a first standalone mobile communication device, and the second mobile device is configured to function as a second standalone mobile communication device when detached from the first mobile device. The second mobile device is detachably coupled to the first mobile device in such a way that the first mobile device continues to include the display screen portion and the user input portion when the second mobile device is detached from the first mobile device.

Abstract translation: 一种具有彼此耦合的多个移动设备的移动通信设备。 移动通信设备包括具有屏幕显示部分和用户输入部分的第一移动设备。 移动通信设备还包括可拆卸地耦合到第一移动设备的至少一个第二移动设备。 第一移动设备被配置为用作第一独立移动通信设备，并且第二移动设备被配置为当与第一移动设备分离时用作第二独立移动通信设备。 第二移动设备可拆卸地耦合到第一移动设备，使得当第二移动设备与第一移动设备分离时，第一移动设备继续包括显示屏部分和用户输入部分。

公开(公告)号：US20100331628A1

公开(公告)日：2010-12-30

申请号：US12493608

申请日：2009-06-29

Applicant: Sailesh Merchant ,  Kouros Azimi ,  Mohammad Mobin

Inventor： Sailesh Merchant ,  Kouros Azimi ,  Mohammad Mobin

IPC: A61B5/00 ,  G08B23/00

CPC classification number: A61B5/02 ,  A61B5/00

Abstract: In described embodiments, a data collection device receives signals from one or more patient monitoring devices, the signals representing patient data and other vital signs measured at a patient. The data collection device employs statistical quality algorithms to track irregular behavior and out-of-bound events, the behavior and events either being pre-set, adaptively set, or otherwise defined within pre-determined limits. The data collection device communicates alerting signals to a caregiver's handheld device when the irregular behavior and out-of-bound events occur. The alerting signals contain information related to the patient data, irregular behavior and out-of-bound events, thereby allowing a caregiver to take appropriate action.

Abstract translation: 在所描述的实施例中，数据收集装置从一个或多个患者监视装置接收信号，该信号表示在患者处测量的患者数据和其他生命体征。 数据收集装置采用统计质量算法来跟踪不规则行为和超出事件，行为和事件被预先设定，自适应地设置或以其他方式定义在预定的限度内。 当发生不规则行为和超出事件时，数据收集设备将警报信号传达给照顾者的手持设备。 警报信号包含与患者数据相关的信息，不规则行为和超出事件，从而允许照顾者采取适当的行动。

公开(公告)号：US20060066335A1

公开(公告)日：2006-03-30

申请号：US10952453

申请日：2004-09-28

Applicant: Seung Kang ,  Subramanian Karthikeyan ,  Sailesh Merchant ,  Lisa Mullin

Inventor： Seung Kang ,  Subramanian Karthikeyan ,  Sailesh Merchant ,  Lisa Mullin

IPC: G01R31/02

CPC classification number: G01R31/2877 ,  G01R31/2856

Abstract: A semiconductor test device includes a test circuit having contacts for applying an electrical signal and measuring electrical parameters of the test circuit. The semiconductor test device also includes an integrally formed heating circuit comprising at least one circuit meander positioned adjacent the test circuit for raising a temperature within a portion of the test circuit.

Abstract translation: 半导体测试装置包括具有用于施加电信号和测量测试电路的电参数的触点的测试电路。 半导体测试装置还包括整体形成的加热电路，其包括邻近测试电路定位的至少一个电路弯道，用于升高测试电路的一部分内的温度。

公开(公告)号：US06294468B1

公开(公告)日：2001-09-25

申请号：US09517965

申请日：2000-03-03

Applicant: Adrienne Gould-Choquette ,  Sailesh Merchant

Inventor： Adrienne Gould-Choquette ,  Sailesh Merchant

IPC: H01L2144

CPC classification number: C23C16/0272 ,  C23C16/14 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76877

Abstract: A method of depositing tungsten on a semiconductor substrate is disclosed. The semiconductor substrate is heated to between about 360° C. and about 390° C. and preferably about 375° C. Initiation gases are introduced into a first deposition station of a chemical vapor deposition chamber to form an amorphous, monolayer of silicon. Initiation gas comprises a silane gas flow at a rate of about 40 to about 48 standard cubic centimeters per minute. A nucleation gas flow rate formed of silane of about 20 to about 30 standard cubic centimeters per minute and a tungsten hexafluoride gas flow at a rate of about 300 to about 350 standard cubic standard centimeters per minute is next introduced. A hydrogen reducing gas flow rate is then introduced to form a layer of hydrogen reduced bulk tungsten. This reduced gas flow comprises a hydrogen gas flow at a rate of about 7,000 to about 8,500 standard cubic centimeters per minute gas flow, and a tungsten hexafluoride gas flow at a rate of about 300 to about 350 standard cubic centimeters per minute. A bulk hydrogen reduced tungsten is deposited at successive deposition stations.

Abstract translation: 公开了一种在半导体衬底上沉积钨的方法。 将半导体衬底加热至约360℃至约390℃，优选约375℃。将起始气体引入化学气相沉积室的第一沉积站中以形成无定形的单层硅。 起始气体以约40至约48标准立方厘米/分钟的速率包含硅烷气流。 接下来引入由约20至约30标准立方厘米每分钟的硅烷形成的成核气体流速和以约300至约350标准立方厘米每分钟的速率的六氟化钨气体流。 然后引入氢还原气体流速以形成一个减少氢的体积钨层。 这种减少的气流包括氢气流以约7,000至约8,500标准立方厘米每分钟气流的速率，以及以约300至约350标准立方厘米每分钟的速率的六氟化钨气流。 在连续沉积站沉积大量减少氢的钨。