Abstract:
A mobile communication device having a plurality of mobile devices coupled to one another. The mobile communication device includes a first mobile device that has a screen display portion and a user input portion. The mobile communication device also includes at least one second mobile device detachably coupled to the first mobile device. The first mobile device is configured to function as a first standalone mobile communication device, and the second mobile device is configured to function as a second standalone mobile communication device when detached from the first mobile device. The second mobile device is detachably coupled to the first mobile device in such a way that the first mobile device continues to include the display screen portion and the user input portion when the second mobile device is detached from the first mobile device.
Abstract:
In described embodiments, a data collection device receives signals from one or more patient monitoring devices, the signals representing patient data and other vital signs measured at a patient. The data collection device employs statistical quality algorithms to track irregular behavior and out-of-bound events, the behavior and events either being pre-set, adaptively set, or otherwise defined within pre-determined limits. The data collection device communicates alerting signals to a caregiver's handheld device when the irregular behavior and out-of-bound events occur. The alerting signals contain information related to the patient data, irregular behavior and out-of-bound events, thereby allowing a caregiver to take appropriate action.
Abstract:
A semiconductor test device includes a test circuit having contacts for applying an electrical signal and measuring electrical parameters of the test circuit. The semiconductor test device also includes an integrally formed heating circuit comprising at least one circuit meander positioned adjacent the test circuit for raising a temperature within a portion of the test circuit.
Abstract:
A method of depositing tungsten on a semiconductor substrate is disclosed. The semiconductor substrate is heated to between about 360° C. and about 390° C. and preferably about 375° C. Initiation gases are introduced into a first deposition station of a chemical vapor deposition chamber to form an amorphous, monolayer of silicon. Initiation gas comprises a silane gas flow at a rate of about 40 to about 48 standard cubic centimeters per minute. A nucleation gas flow rate formed of silane of about 20 to about 30 standard cubic centimeters per minute and a tungsten hexafluoride gas flow at a rate of about 300 to about 350 standard cubic standard centimeters per minute is next introduced. A hydrogen reducing gas flow rate is then introduced to form a layer of hydrogen reduced bulk tungsten. This reduced gas flow comprises a hydrogen gas flow at a rate of about 7,000 to about 8,500 standard cubic centimeters per minute gas flow, and a tungsten hexafluoride gas flow at a rate of about 300 to about 350 standard cubic centimeters per minute. A bulk hydrogen reduced tungsten is deposited at successive deposition stations.
Abstract:
In described embodiments, elements of a wireless home network employ learned power security for the network. An access point, router, or other wireless base station emits and receives signals having corresponding signal strengths. Wireless devices coupled to the base station through a radio link are moved through the home network at boundary points of the home and the signal strength is measured at each device and communicated to the base station. Based on the signal strength information from the emitted signals measured at the boundary points and/or from measured signal strength information of signals received from the boundary points, the base station determines a network secure area. The base station declines permission of devices attempting to use or join the home network that exhibit signal strength characteristics less than boundary values for the network secure area.
Abstract:
In described embodiments, a point of sale system, such as a cash register, provides for translation from standard language to desired native language on a receipt. Translation might be initiated through user (e.g., purchaser) input, manually or from a credit card, for example, and translation is accomplished through a database accessed by the point of sale system. Consequently, the point of sale system provides at least one receipt to the purchaser that identifies purchases as line item descriptions, and, in some cases, the price paid for each line item, in the purchaser's native language that might be used, for example, to accurately prepare vouchers.
Abstract:
Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and deformation, and other types of damage that commonly occur during test and assembly processes of semiconductor devices.
Abstract:
The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.
Abstract:
The present invention provides an interconnect structure, a method of manufacture therefor, and an integrated circuit including the same. The interconnect structure, among other elements, may include a tungsten nitride layer located within an opening in a dielectric layer, and a conductive plug located over the tungsten nitride layer and within the opening. Thus, in certain embodiments the present invention is free of a titanium/titanium nitride layer, and any defects associated with those layers.
Abstract:
An inductor formed within an integrated circuit and a method for forming the inductor. The inductor comprises an underlying layer of aluminum formed in a first metallization layer and patterned and etched into the desired shape. In one embodiment the aluminum line comprises a spiral shape. According to a damascene process, a conductive runner, preferably of copper, is formed in a dielectric layer overlying the aluminum line and in electrical contact therewith. The aluminum line and the conductive runner cooperate to form the inductor. In another embodiment the aluminum line and the conductive runner are formed in a vertically spaced-apart orientation, with tungsten plugs or conductive vias formed to provide electrical connection therebetween. A method for forming the inductor comprises forming an aluminum conductive line and forming a conductive runner over the conductive line.