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公开(公告)号：US20210265303A1
公开(公告)日：2021-08-26
申请号：US17317478
申请日：2021-05-11
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Adeel Ahmad Bajwa , Thomas J. Colosimo, JR.
IPC: H01L23/00
Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.
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公开(公告)号：US20150132888A1
公开(公告)日：2015-05-14
申请号：US14413475
申请日：2013-07-01
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Thomas J. Colosimo, JR. , Jon W. Brunner
IPC: H01L23/00
CPC classification number: H01L24/43 , H01L24/48 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/432 , H01L2224/45099 , H01L2224/451 , H01L2224/45139 , H01L2224/48091 , H01L2224/4845 , H01L2224/48465 , H01L2224/78301 , H01L2224/78611 , H01L2224/78621 , H01L2224/85045 , H01L2224/851 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85365 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2924/01049
Abstract: A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.
Abstract translation: 形成导线互连结构的方法包括以下步骤：（a）使用引线接合工具在基板上的接合位置处形成引线接合; （b）将与电线接合连续的电线长度延伸到另一位置; （c）使用所述电线焊接工具将所述电线长度的一部分压靠在另一位置; （d）将导线接合工具和电线长度的按压部分移动到线接合处的位置; 以及（e）将所述电线的长度从所述按压部分的电线供应部分开，从而提供接合到所述接合位置的电线互连结构。
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3.发明公开公开(公告)号：US20230260953A1
公开(公告)日：2023-08-17
申请号：US18108725
申请日：2023-02-13
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Matthew B. Wasserman, JR. , Thomas J. Colosimo, JR.
CPC classification number: H01L24/75 , B01D53/40 , H01L24/81 , H01L2224/751 , H01L2224/759 , B01D2258/0216 , H01L2224/81203 , H01L2224/81986 , H01L2224/81908 , H01L2224/81065 , H01L2924/40
Abstract: A method of monitoring gas byproducts of a bonding system is provided. The method includes: providing a plurality of bonding systems, each of the bonding systems including a reducing gas delivery system for use in connection with a bonding operation, each of the bonding systems being configured for exhausting gas byproducts; connecting each of the bonding systems to a monitoring device using a respective gas delivery path; and monitoring a composition of at least a portion of the gas byproducts with the monitoring device.
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公开(公告)号：US20210098414A1
公开(公告)日：2021-04-01
申请号：US16736416
申请日：2020-01-07
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Adeel Ahmad Bajwa , Thomas J. Colosimo, JR.
IPC: H01L23/00
Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.
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公开(公告)号：US20170345787A1
公开(公告)日：2017-11-30
申请号：US15678619
申请日：2017-08-16
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Thomas J. Colosimo, JR. , Jon W. Brunner
IPC: H01L23/00
CPC classification number: H01L24/43 , H01L24/48 , H01L24/78 , H01L24/85 , H01L24/97 , H01L2224/432 , H01L2224/45099 , H01L2224/451 , H01L2224/45139 , H01L2224/48091 , H01L2224/4845 , H01L2224/48465 , H01L2224/78301 , H01L2224/78611 , H01L2224/78621 , H01L2224/78631 , H01L2224/85045 , H01L2224/851 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2224/85365 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2924/01049
Abstract: A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20240063169A1
公开(公告)日：2024-02-22
申请号：US18227202
申请日：2023-07-27
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Adeel Ahmad Bajwa , Thomas J. Colosimo, JR. , Matthew B. Wasserman , Robert N. Chylak
IPC: H01L23/00
CPC classification number: H01L24/75 , H01L24/81 , H01L2224/751 , H01L2224/81801 , H01L2224/81065
Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a reducing gas delivery system configured to provide a reducing gas to a bonding area of a bonding system. The bonding system also includes a gas delivery line configured to transport the reducing gas from a reducing gas source to the reducing gas delivery system. At least a portion of the gas delivery line is heated.
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公开(公告)号：US20230133526A1
公开(公告)日：2023-05-04
申请号：US17972674
申请日：2022-10-25
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Thomas J. Colosimo, JR. , Matthew B. Wasserman , Adeel Bajwa
IPC: H01L23/00
Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a bond head assembly for bonding a semiconductor element to a substrate at a bonding area of the bonding system; a reducing gas delivery system for providing a reducing gas to the bonding area during bonding of the semiconductor element to the substrate; and a gas composition analyzer configured for continuously monitoring a composition of the reducing gas during operation of the bonding system.
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公开(公告)号：US20210391297A1
公开(公告)日：2021-12-16
申请号：US17458082
申请日：2021-08-26
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Adeel Ahmad Bajwa , Thomas J. Colosimo, JR.
IPC: H01L23/00
Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.
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9.发明申请THERMOCOMPRESSION BONDERS, METHODS OF OPERATING THERMOCOMPRESSION BONDERS, AND HORIZONTAL CORRECTION MOTIONS USING LATERAL FORCE MEASUREMENT IN THERMOCOMPRESSION BONDING 有权热变形接头，热转移接头的操作方法以及使用横向力测量在热转移接合中的水平校正运动公开(公告)号：US20160343626A1
公开(公告)日：2016-11-24
申请号：US15156738
申请日：2016-05-17
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Thomas J. Colosimo, JR. , Michael P. Schmidt-Lange , Horst Clauberg , Matthew B. Wasserman
CPC classification number: B23K20/023 , B23K1/0016 , B23K3/00 , H01L2224/11
Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).
Abstract translation: 提供一种操作热压接系统的方法。 该方法包括以下步骤：（a）在与热压接操作相关联的半导体元件的第一导电结构与衬底的第二导电结构接触的同时，向半导体元件施加第一级接合力; （b）测量与（i）第一导电结构中的一个和（ii）相应的第二导电结构之间的接触相关的横向力; （c）基于步骤（b）中测量的侧向力确定要施加的校正运动; 和（d）应用在步骤（c）中确定的校正动作。
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10.发明申请THERMOCOMPRESSION BONDERS, METHODS OF OPERATING THERMOCOMPRESSION BONDERS, AND INTERCONNECT METHODS FOR FINE PITCH FLIP CHIP ASSEMBLY 有权热变形接头，操作热转移接头的方法，以及精细切割片芯组件的互连方法公开(公告)号：US20150382480A1
公开(公告)日：2015-12-31
申请号：US14750186
申请日：2015-06-25
Applicant: Kulicke and Soffa Industries, Inc.
Inventor： Guy Frick , Thomas J. Colosimo, JR. , Horst Clauberg
CPC classification number: H05K3/34 , B23K1/0016 , B23K1/203 , B23K3/04 , B23K3/082 , B23K2101/42 , H01L24/75 , H01L24/81 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16238 , H01L2224/75161 , H01L2224/75184 , H01L2224/75251 , H01L2224/75252 , H01L2224/81024 , H01L2224/81048 , H01L2224/81191 , H01L2224/81203 , H01L2224/81204 , H05K3/3489 , H05K3/3494 , H05K2201/10674 , H05K2203/04 , H01L2924/014
Abstract: A thermocompression bonder is provided. The thermocompression bonder includes: a bond head including a heated bonding tool for bonding a semiconductor element to a substrate; and a flux application tool for applying a flux material to conductive contacts of the substrate prior to bonding of the semiconductor element to the substrate.
Abstract translation: 提供热压接机。 热压接机包括：接合头，其包括用于将半导体元件接合到衬底的加热焊接工具; 以及焊剂施加工具，用于在将半导体元件接合到衬底之前将焊剂材料施加到衬底的导电触点。
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