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    METHODS OF BONDING OF SEMICONDUCTOR ELEMENTS TO SUBSTRATES, AND RELATED BONDING SYSTEMS
    1.
    发明申请
    METHODS OF BONDING OF SEMICONDUCTOR ELEMENTS TO SUBSTRATES, AND RELATED BONDING SYSTEMS 有权

    公开(公告)号：US20210098414A1

    公开(公告)日：2021-04-01

    申请号：US16736416

    申请日：2020-01-07

    Applicant: Kulicke and Soffa Industries, Inc.

    Inventor： Adeel Ahmad Bajwa ,  Thomas J. Colosimo, JR.

    IPC: H01L23/00

    Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

    METHODS OF BONDING SEMICONDUCTOR ELEMENTS TO A SUBSTRATE, INCLUDING USE OF A REDUCING GAS, AND RELATED BONDING MACHINES
    2.
    发明申请
    METHODS OF BONDING SEMICONDUCTOR ELEMENTS TO A SUBSTRATE, INCLUDING USE OF A REDUCING GAS, AND RELATED BONDING MACHINES 审中-公开

    公开(公告)号：US20190252349A1

    公开(公告)日：2019-08-15

    申请号：US16272166

    申请日：2019-02-11

    Applicant: Kulicke and Soffa Industries, Inc.

    Inventor： Adeel Ahmad Bajwa

    IPC: H01L23/00 ,  H01L21/67 ,  H01L21/50

    CPC classification number: H01L24/89 ,  H01L21/50 ,  H01L21/67017 ,  H01L21/67103 ,  H01L2021/603

    Abstract: A method of bonding a semiconductor element to a substrate includes: carrying a semiconductor element including a plurality of first electrically conductive structures with a bonding tool; supporting a substrate including a plurality of second electrically conductive structures with a support structure; providing a reducing gas in contact with each of the plurality of first conductive structures and the plurality of second conductive structures; establishing contact between corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures; moving at least one of the semiconductor element and the substrate such that the corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures are separated; re-establishing contact between the plurality of first conductive structures and the plurality of second conductive structures; and bonding the plurality of first conductive structures to the respective ones of the plurality of second conductive structures.

    Methods of bonding semiconductor elements to a substrate, including use of a reducing gas, and related bonding machines
    3.
    发明授权
    Methods of bonding semiconductor elements to a substrate, including use of a reducing gas, and related bonding machines 有权

    公开(公告)号：US11776933B2

    公开(公告)日：2023-10-03

    申请号：US17090278

    申请日：2020-11-05

    Applicant: Kulicke and Soffa Industries, Inc.

    Inventor： Adeel Ahmad Bajwa

    IPC: B23K20/00 ,  H01L21/00 ,  H01L23/00 ,  H01L21/67 ,  H01L21/50

    CPC classification number: H01L24/89 ,  H01L21/50 ,  H01L21/67017 ,  H01L21/67103 ,  H01L24/75 ,  H01L2224/81065

    Abstract: A method of bonding a semiconductor element to a substrate includes: carrying a semiconductor element including a plurality of first electrically conductive structures with a bonding tool; supporting a substrate including a plurality of second electrically conductive structures with a support structure; providing a reducing gas in contact with each of the plurality of first conductive structures and the plurality of second conductive structures; establishing contact between corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures; moving at least one of the semiconductor element and the substrate such that the corresponding ones of the plurality of first conductive structures and the plurality of second conductive structures are separated; re-establishing contact between the plurality of first conductive structures and the plurality of second conductive structures; and bonding the plurality of first conductive structures to the respective ones of the plurality of second conductive structures.

    Methods of bonding of semiconductor elements to substrates, and related bonding systems
    4.
    发明授权
    Methods of bonding of semiconductor elements to substrates, and related bonding systems 有权

    公开(公告)号：US11616042B2

    公开(公告)日：2023-03-28

    申请号：US17458082

    申请日：2021-08-26

    Applicant: Kulicke and Soffa Industries, Inc.

    Inventor： Adeel Ahmad Bajwa ,  Thomas J. Colosimo, Jr.

    IPC: B23K1/20 ,  H01L23/00 ,  B23K35/38 ,  B23K31/02

    Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

    METHODS OF BONDING OF SEMICONDUCTOR ELEMENTS TO SUBSTRATES, AND RELATED BONDING SYSTEMS
    5.
    发明申请
    METHODS OF BONDING OF SEMICONDUCTOR ELEMENTS TO SUBSTRATES, AND RELATED BONDING SYSTEMS 有权

    公开(公告)号：US20210265303A1

    公开(公告)日：2021-08-26

    申请号：US17317478

    申请日：2021-05-11

    Applicant: Kulicke and Soffa Industries, Inc.

    Inventor： Adeel Ahmad Bajwa ,  Thomas J. Colosimo, JR.

    IPC: H01L23/00

    Abstract: A bonding system for bonding a semiconductor element to a substrate is provided. The bonding system includes a substrate oxide reduction chamber configured to receive a substrate. The substrate includes a plurality of first electrically conductive structures. The substrate oxide reduction chamber is configured to receive a reducing gas to contact each of the plurality of first electrically conductive structures. The bonding system also includes a substrate oxide prevention chamber for receiving the substrate after the reducing gas contacts the plurality of first electrically conductive structures. The substrate oxide prevention chamber has an inert environment when receiving the substrate. The bonding system also includes a reducing gas delivery system for providing a reducing gas environment during bonding of a semiconductor element to the substrate.

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