公开(公告)号：US09214535B2

公开(公告)日：2015-12-15

申请号：US14023357

申请日：2013-09-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tomoko Matsudai ,  Tsuneo Ogura ,  Kazutoshi Nakamura ,  Yuichi Oshino ,  Hideaki Ninomiya ,  Yoshiko Ikeda

IPC分类号： H01L29/739 ,  H01L29/36 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/7393 ,  H01L29/0696 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397

摘要： A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.

摘要翻译： 在IGBT区域和边界区域设置有第一导电类型的集电极层，并且在IGBT区域中用作IGBT的集电极。 第二导电类型的阴极层设置在与集电极层分开的二极管区域中，并且用作二极管的阴极。 第二导电类型的漂移层设置在IGBT区域，边界区域和二极管区域中，漂移层设置在与第一电极相对的集电极层和阴极层的侧面上。 第一导电类型的扩散层设置在与第一电极相对的漂移层一侧的边界区域中。

公开(公告)号：US09653557B2

公开(公告)日：2017-05-16

申请号：US14195784

申请日：2014-03-03

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tomoko Matsudai ,  Yuichi Oshino ,  Keiko Kawamura ,  Bungo Tanaka

IPC分类号： H01L29/00 ,  H01L29/40 ,  H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/404 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/7397

摘要： A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region having a second conductivity type, a first insulating layer on the first and second semiconductor regions, and field plate electrodes are provided in the first insulating layer at different distances from the first semiconductor layer. A first field plate electrode is at a first distance, a second field plate electrode is at a second distance greater than the first distance, and a third field plate electrode is at a distance greater than the second distance. The first through third field plate electrodes are electrically connected to each other and the third electrode is electrically connected to the second semiconductor region.

公开(公告)号：US09620631B2

公开(公告)日：2017-04-11

申请号：US13846624

申请日：2013-03-18

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tomoko Matsudai ,  Tsuneo Ogura ,  Yuichi Oshino ,  Hideaki Ninomiya ,  Kazutoshi Nakamura

IPC分类号： H01L29/739 ,  H01L29/66 ,  H01L29/02 ,  H01L29/78 ,  H01L29/40 ,  H01L29/47 ,  H01L29/08 ,  H01L29/868 ,  H01L29/06 ,  H01L29/36

CPC分类号： H01L29/7397 ,  H01L29/0626 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/407 ,  H01L29/47 ,  H01L29/868

摘要： A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a pair of conductive bodies, a third semiconductor layer of the second conductivity type, and a fourth semiconductor layer of the first conductivity type. The second semiconductor layer is provided on the first semiconductor layer on the first surface side. The pair of conductive bodies are provided via an insulating film in a pair of first trenches extending across the second semiconductor layer from a surface of the second semiconductor layer to the first semiconductor layer. The third semiconductor layer is selectively formed on the surface of the second semiconductor layer between the pair of conductive bodies and has a higher second conductivity type impurity concentration in a surface of the third semiconductor layer than the second semiconductor layer.

公开(公告)号：US08853775B2

公开(公告)日：2014-10-07

申请号：US14021586

申请日：2013-09-09

申请人： Kabushiki Kaisha Toshiba

发明人： Tsuneo Ogura ,  Kazutoshi Nakamura ,  Hideaki Ninomiya ,  Tomoko Matsudai ,  Yuichi Oshino

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7395 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7397

摘要： In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate.

摘要翻译： 在一个实施例中，半导体器件包括具有第一和第二主表面的半导体衬底，控制电极设置在半导体衬底的第一主表面上的沟槽中并沿平行于第一主表面的第一方向延伸，并且控制互连设置在 半导体衬底的第一主表面并且沿与第一方向垂直的第二方向延伸。 半导体衬底包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，在第一主表面侧上的第一半导体层的表面上，第一导电类型的第三半导体层设置在第一半导体层的表面上 在第一主表面侧上延伸并在第二方向上延伸的第二半导体层，以及在半导体衬底的第二主表面上的第二导电类型的第四半导体层。

公开(公告)号：US20150243656A1

公开(公告)日：2015-08-27

申请号：US14708758

申请日：2015-05-11

申请人： Kabushiki Kaisha Toshiba

发明人： Tsuneo Ogura ,  Tomoko Matsudai ,  Yuichi Oshino ,  Shinichiro Misu ,  Yoshiko Ikeda ,  Kazutoshi Nakamura

IPC分类号： H01L27/08 ,  H01L29/45 ,  H01L29/87

CPC分类号： H01L27/0814 ,  H01L29/083 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L29/868 ,  H01L29/87

摘要： According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.

摘要翻译： 根据一个实施例，半导体器件包括：第一电极; 第二电极; 设置在所述第一电极和所述第二电极之间的第一半导体层; 第二半导体层，设置在第一半导体层和第二电极之间，第二半导体层的杂质浓度低于第一半导体层; 设置在所述第二半导体层的一部分和所述第二电极之间的第一半导体区域; 第二半导体区域，设置在与所述第二半导体层的所述部分不同的部分和所述第二电极之间，所述第二半导体区域与所述第一半导体区域接触; 以及设置在所述第一半导体区域和所述第二电极的至少一部分之间的第三半导体区域。

公开(公告)号：US09059236B2

公开(公告)日：2015-06-16

申请号：US14013741

申请日：2013-08-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tsuneo Ogura ,  Tomoko Matsudai ,  Yuichi Oshino ,  Shinichiro Misu ,  Yoshiko Ikeda ,  Kazutoshi Nakamura

IPC分类号： H01L29/66 ,  H01L29/861 ,  H01L29/739 ,  H01L29/868 ,  H01L29/08 ,  H01L27/08

CPC分类号： H01L27/0814 ,  H01L29/083 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L29/868 ,  H01L29/87

摘要： According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.

摘要翻译： 根据一个实施例，半导体器件包括：第一电极; 第二电极; 设置在所述第一电极和所述第二电极之间的第一半导体层; 第二半导体层，设置在第一半导体层和第二电极之间，第二半导体层的杂质浓度低于第一半导体层; 设置在所述第二半导体层的一部分和所述第二电极之间的第一半导体区域; 第二半导体区域，设置在与所述第二半导体层的所述部分不同的部分和所述第二电极之间，所述第二半导体区域与所述第一半导体区域接触; 以及设置在所述第一半导体区域和所述第二电极的至少一部分之间的第三半导体区域。

公开(公告)号：US20140077261A1

公开(公告)日：2014-03-20

申请号：US14020460

申请日：2013-09-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yuichi Oshino ,  Tomoko Matsudai ,  Kazutoshi Nakamura ,  Shinichiro Misu ,  Takuma Hara

IPC分类号： H01L29/739 ,  H01L29/66

CPC分类号： H01L29/7393 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/404 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861

摘要： An upper part of the termination region of the semiconductor substrate, an upper surface of the first diffusion layers and an upper surface of the first oxide film is etched in such a manner that the level of the upper surface of the semiconductor substrate in the termination region including the first oxide film and the first diffusion layers is lower than the level of the upper surface of the semiconductor substrate in the cell region. Then, a second oxide film is formed on the semiconductor substrate. An electrode is formed on the second oxide film so as to extend from the first region toward the cell region to the first diffusion layers in such a manner that the level of an upper surface of the electrode is lower than the level of the upper surface of the semiconductor substrate in the cell region.

摘要翻译： 半导体衬底的端部区域的上部，第一扩散层的上表面和第一氧化物膜的上表面被蚀刻，使得半导体衬底在端接区域中的上表面的电平 包括第一氧化物膜和第一扩散层比单元区域中的半导体衬底的上表面的电平低。 然后，在半导体衬底上形成第二氧化膜。 在第二氧化物膜上形成电极，以从第一区域朝向电池区域延伸到第一扩散层，使得电极的上表面的电平低于电极的上表面的电平 在单元区域中的半导体衬底。

公开(公告)号：US09337189B2

公开(公告)日：2016-05-10

申请号：US14708758

申请日：2015-05-11

申请人： Kabushiki Kaisha Toshiba

发明人： Tsuneo Ogura ,  Tomoko Matsudai ,  Yuichi Oshino ,  Shinichiro Misu ,  Yoshiko Ikeda ,  Kazutoshi Nakamura

IPC分类号： H01L29/08 ,  H01L27/08 ,  H01L29/739 ,  H01L29/868 ,  H01L29/861 ,  H01L29/66 ,  H01L29/45 ,  H01L29/87 ,  H01L29/47

CPC分类号： H01L27/0814 ,  H01L29/083 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L29/868 ,  H01L29/87

摘要： According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.

公开(公告)号：US20140124832A1

公开(公告)日：2014-05-08

申请号：US14013741

申请日：2013-08-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tsuneo Ogura ,  Tomoko Matsudai ,  Yuichi Oshino ,  Shinichiro Misu ,  Yoshiko Ikeda ,  Kazutoshi Nakamura

IPC分类号： H01L29/739

CPC分类号： H01L27/0814 ,  H01L29/083 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L29/868 ,  H01L29/87

摘要： According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode.

摘要翻译： 根据一个实施例，半导体器件包括：第一电极; 第二电极; 设置在所述第一电极和所述第二电极之间的第一半导体层; 第二半导体层，设置在第一半导体层和第二电极之间，第二半导体层的杂质浓度低于第一半导体层; 设置在所述第二半导体层的一部分和所述第二电极之间的第一半导体区域; 第二半导体区域，设置在与所述第二半导体层的所述部分不同的部分和所述第二电极之间，所述第二半导体区域与所述第一半导体区域接触; 以及设置在所述第一半导体区域和所述第二电极的至少一部分之间的第三半导体区域。

公开(公告)号：US20140084337A1

公开(公告)日：2014-03-27

申请号：US14023357

申请日：2013-09-10

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tomoko Matsudai ,  Tsuneo Ogura ,  Kazutoshi Nakamura ,  Yuichi Oshino ,  Hideaki Ninomiya ,  Yoshiko Ikeda

IPC分类号： H01L29/739

CPC分类号： H01L29/7393 ,  H01L29/0696 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7397

摘要： A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.

摘要翻译： 在IGBT区域和边界区域设置有第一导电类型的集电极层，并且在IGBT区域中用作IGBT的集电极。 第二导电类型的阴极层设置在与集电极层分开的二极管区域中，并且用作二极管的阴极。 第二导电类型的漂移层设置在IGBT区域，边界区域和二极管区域中，漂移层设置在与第一电极相对的集电极层和阴极层的侧面上。 第一导电类型的扩散层设置在与第一电极相对的漂移层一侧的边界区域中。