发明申请
US20140077261A1 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE
审中-公开
功率半导体器件及其制造功率半导体器件的方法
- 专利标题： POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE
- 专利标题（中）： 功率半导体器件及其制造功率半导体器件的方法
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申请号： US14020460申请日： 2013-09-06
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公开(公告)号： US20140077261A1公开(公告)日： 2014-03-20
- 发明人: Yuichi Oshino , Tomoko Matsudai , Kazutoshi Nakamura , Shinichiro Misu , Takuma Hara
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2012-206811 20120920; JP2013-146968 20130712
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/66
摘要：
An upper part of the termination region of the semiconductor substrate, an upper surface of the first diffusion layers and an upper surface of the first oxide film is etched in such a manner that the level of the upper surface of the semiconductor substrate in the termination region including the first oxide film and the first diffusion layers is lower than the level of the upper surface of the semiconductor substrate in the cell region. Then, a second oxide film is formed on the semiconductor substrate. An electrode is formed on the second oxide film so as to extend from the first region toward the cell region to the first diffusion layers in such a manner that the level of an upper surface of the electrode is lower than the level of the upper surface of the semiconductor substrate in the cell region.
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